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1.  A detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical vapor deposition
C. Besikci, Y.H. Choi, G. Labeyrie, E. Bigan and M. Razeghi with J.B. Cohen, J. Carsello, and V.P. Dravid
Journal of Applied Physics 76 (10)-- November 15, 1994
InAs0.3Sb0.7 layers with mirrorlike morphology have been grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition. A room‐temperature electron Hall mobility of 2×104 cm²/V· s has been obtained for a 2 μm thick layer. Low‐temperature resistivity of the layers depended on TMIn flow rate and layer thickness. Hall mobility decreased monotonically with decreasing temperature below 300 K. A 77 K conductivity profile has shown an anomalous increase in the sample conductivity with decreasing thickness except in the near vicinity of the heterointerface. In order to interpret the experimental data, the effects of different scattering mechanisms on carrier mobility have been calculated, and the influences of the lattice mismatch and surface conduction on the Hall measurements have been investigated by applying a three‐layer Hall‐effect model. Experimental and theoretical results suggest that the combined effects of the dislocations generated by the large lattice mismatch and strong surface inversion may lead to deceptive Hall measurements by reflecting typical n‐type behavior for a p‐type sample, and the measured carrier concentration may considerably be affected by the surface conduction up to near room temperature. A quantitative analysis of dislocation scattering has shown significant degradation in electron mobility for dislocation densities above 107 cm−2. The effects of dislocation scattering on hole mobility have been found to be less severe. It has also been observed that there is a critical epilayer thickness (∼1 μm) below which the surface electron mobility is limited by dislocation scattering. reprint
 
2.  Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition
P.T. Staveteig, Y.H. Choi, G. Labeyrie, E. Bigan, and M. Razeghi
Applied Physics Letters 64 (4)-- January 24, 1994
We report infrared photoconductors based on InTlSb/InSb grown by low‐pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×108 Hz½·cm·W-1 at 7 μm wavelength. reprint
 
3.  InTlSb alloys for infrared detection
E. Bigan, Y.H. Choi, G. Labeyrie, and M. Razeghi
Proceedings, SPIE Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, Vol. 2145-- January 24, 1994
InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 μm up to 9 μm by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 μm cutoff wavelength exhibited a D* of 109 cm·Hz½·W-1 at 7 μm operating wavelength. reprint
 
4.  The Effects of V/III Ratio on Optical, Electrical and Structural Properties of InAs0.3Sb0.7Grown by LP-MOCVD
Y.H. Choi, G. Labeyrie, P.T. Staveteig, E. Bigan, and M. Razeghi
-- October 15, 1993
 

Page 1  (4 Items)