Publications by    
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1.  InAsSbP/InAsSb/InAs Laser Diodes λ = 3.2 μm) Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
J. Diaz, G. Lukas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, and M. Razeghi
Applied Physics Letters 70 (1)-- January 6, 1997
We report metal–organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 μm operating at temperatures up to 220 K with threshold current density of 40 A/cm² at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 μm stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K. reprint
 
2.  Comparison of Gain and Threshold Current Density for InGaAsP/GaAs λ = 808 nm) Lasers with Different Quantum-Well Thickness
H.J. Yi, J. Diaz, I. Eliashevich, G. Lukas, S. Kim, D. Wu, M. Erdtmann, C. Jelen, S. Slivken, L.J. Wang, and M. Razeghi
Journal of Applied Physics 79 (11)-- July 1, 1996
We investigated the quantum‐size effects of quantum well (QW) on gain and threshold current density for InGaAsP/GaAs (λ=808 nm) laser diodes. In this work, a comparison is made of lasers with different QW thickness while keeping the optical confinement factors constant. We found that the threshold current density and differential efficiency were not affected by narrowing the QW thickness. The theoretical model taking into account the mixing of the valence bands and momentum relaxation for InGaAsP/GaAs lasers with spontaneous emission (optically pumped) measurement shows that the absence of difference between these structures can be attributed to the high relaxation rate. reprint
 
3.  High-Temperature Reliability of Aluminum-free 980nm and 808nm Laser Diodes
J. Diaz, H. Yi, C. Jelen, S. Kim, S. Slivken, I. Eliashevich, M. Erdtmann, D. Wu, G. Lukas, and M. Razeghi
-- January 1, 1996
 

Page 1  (3 Items)