Center for Quantum Devices - Journal Articles and Conference Proceedings

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Molecular Beam Epitaxial Growth of High Quality InSb for p-i-n Photodetectors
G. Singh, E. Michel, C. Jelen, S. Slivken, J. Xu, P. Bove, I. Ferguson, and M. Razeghi
Journal of Vacuum Science and Technology B, 13 (2)-- March 1, 1995
The InSb infrared photodetectors grown heteroepitaxially on Si substrates by molecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-inch Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsitivity at 4 μm is about 1.0×10³ V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8×10¹⁰ cm·Hz^½/W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPAs) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA's in the future. reprint

Molecular Beam Epitaxial Growth of High Quality InSb
E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi
Applied Physics Letters 65 (26)-- December 26, 1994
In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 µm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92,300 cm²·V⁻¹ at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. reprint

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