The Center for Quantum Devices in the News by    
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276.  
Sharper Imaes Thanks to Bigger Substrates
Sharper Imaes Thanks to Bigger Substrates
Inside R & D - November 12, 1997
A group at Northwestern University's Center for Quantum Devices has pushed the envelope by marrying higher quality, more uniform, cheaper and larger GaAs substrates with InSb films. ... [read more]
 
277.  
Northwestern Team Produces Quantum Cascade Laser
Northwestern Team Produces Quantum Cascade Laser
Optics and Photonics News - November 1, 1997
Using a single-step Growth process, Northwestern University researchers have produced room-temperature 8.5 μmm quantum cascade lasers (QCL). The lasers produce 1 μsec pulses at 200 Hz with a peak output power of more than 700 mW at 79K, and 25 mW at 300 K. ... [read more]
 
278.  
Researchers Demonstrate High-Power, Aluminum-free Mid-IR Laser
Researchers Demonstrate High-Power, Aluminum-free Mid-IR Laser
Photonics Spectra - October 1, 1997
Scientist at the Center for Quantum Devices have demonstrated and Al-free laser diode that emits up to 3 W at 3.2 μm. In comparison, similar Al-Free diode lasers have a maximum output of 100 mW, according to the center's director Dr. Manijeh Razeghi. ... [read more]
 
279.  
Northwestern Pushes Nitirde Research
Northwestern Pushes Nitirde Research
Electron Materials Technology News - September 1, 1997
Northwestern University's Center for Quantum Devices investigated ternary AlInN grown by MOCVD. They found the material to have a band-gap energy of 5.26 eV, (higher than previously reported) for a composition of Al0.92In0.08N ... [read more]
 
280.  
Single-Step QC Laser Emits at 8.5 μm
Single-Step QC Laser Emits at 8.5 μm
Photonics Spectra - August 1, 1997
In the latest development in quantum cascade laser (QCL) research a group of Northwestern University scientist reported an 8.5-μm emission from a QCL grown in a single step by gas-source MBE. ... [read more]
 
281.  
High-Power Mid-Infrared Diode-Laser Bar Generates Peak Power of 3 W at 3.2 μm
High-Power Mid-Infrared Diode-Laser Bar Generates Peak Power of 3 W at 3.2 μm
Laser Focus World - August 1, 1997
Scientist at Northwestern University have developed an antimonide-based laser bar that yields 3 W of peak power at 3.2 μm operating at 90 K. The device was tunable by injection current over a range of about 70 nm. ... [read more]
 
282.  
Semiconuctor Laser International
Semiconuctor Laser International
NASA Tech Briefs - July 10, 1997
Dr. Geoffrey T. Burnham, SLI's president and CEO announced that demand for laser build using Northwestern University's patented Al-Free technology was so great that work would begin on a second phase of its manufacturing facility that would double its size. ... [read more]
 
283.  
Aluminum-Free Diode Lasers
Aluminum-Free Diode Lasers
Lasers and Optronics - May 1, 1997
The Center for Quantum Devices at Northwestern University, has achieved operation at 60°C with 1 W of output power for a 100 μm-emitting aperture, over a device lifetime of 30,000 hours without any degradation in output power or change in wavelength, threshold current, or efficiency. ... [read more]
 
284.  
Pabricate Group III-Nitride Alloys on Saphire
Pabricate Group III-Nitride Alloys on Saphire
Microelectronics Technology Alert - April 21, 1997
The Norwestern group has already refined the deposition of epitaxial layers of III-Nitrides on sapphire substrates and extended the process. Using MOCVD, the alloys were fabricated on the sapphire substrates by varying the concentration of Al compounds to produce a variety of configurations of AlGaN ... [read more]
 
285.  
Race to Mid-IR Laser Emission Tightens
Race to Mid-IR Laser Emission Tightens
Electron Materials Technology News - March 10, 1997
In Illinois researchers at Northwestern University's Center for Quantum Device (CQD) are testing 3.6 μm laser emission from antimonide-based materials. ... [read more]
 
286.  
InSb QWIP Shows Promise
InSb QWIP Shows Promise
Electron Materials Technology News - March 10, 1997
Preliminary results at Northwestern University's Center for Quantum Devices (CQD) suggest a major breakthrough in carrier lifetimes has been achieved in infrared quantum well infrared photodetectors (QWIP) for logn wavelength focal plane arrays. ... [read more]
 
287.  
Al-Free Semiconductor Laser Has Greater Power, Lifetime
Al-Free Semiconductor Laser Has Greater Power, Lifetime
Microelectronics Technology Alert - March 5, 1997
Northwester University has granted and exclusive license to SLI to manufacture and sell aluminum-free lasers. Applications are expected to cover telecommunications, medicine, the military, precision machining, and many other areas. ... [read more]
 
288.  
SLI Liscenses Annother Innovation
SLI Liscenses Annother Innovation
Electron Materials Technology News - March 1, 1997
SLI said the license of Al-Free technology from Northwestern University will allow the company to produce better beam quality and stable output from semiconductor laser diodes. Dr. Burnham expects the data storage industry to benefit. ... [read more]
 
289.  
Building a Better High-Power Laser Diode
Building a Better High-Power Laser Diode
Optics and Photonics News - February 10, 1997
While Northwestern University's Center for Quantum Devices holds patents for MOCVD growth of Aluminum-Free laser diode, researchers at SLI and Coherent are investigating a new MBE fabrication technique that offer higher yields in production and better processing technology than other diodes. ... [read more]
 
290.  
Aluminum-Free Lasers Boost Power Potential
Aluminum-Free Lasers Boost Power Potential
R&D bulletin - January 1, 1997
Semiconductor Laser Int., will commercialize miniature semiconductor laser designed by researchers at Northwestern University's Center for Quantum Devices. ... [read more]
 
291.  
IR Imaging Arrays Turn to Quantum Wells
IR Imaging Arrays Turn to Quantum Wells
Phontonics Spectra - January 1, 1997
A new semiconductor-based IR detector technology for mid- and long-wavelength instruments is ready for the marketplace. The quantum-well infrared photodetector (QWIP) is based on absorption by confined carriers in multiple quantum wells. ... [read more]
 
292.  
Laser Startup Scores Al-feee Power Lasers
Laser Startup Scores Al-feee Power Lasers
III-V's Review - December 1, 1996
Semiconductor Laser International Corp. Endicott, NY, USA has been granted an exclusive license from Northwestern University's Center for Quantum Devices, to develop, manufacture, market, and sell aluminum free high power semiconductor lasers. ... [read more]
 
293.  
Laser Firm Get University Liscense for Marketing Al-Free Laser Diodes
Laser Firm Get University Liscense for Marketing Al-Free Laser Diodes
Photonics Spectra - December 1, 1996
Northwestern University has granted an exclusive license to Semiconductor Laser International Corp. (SLI) to develop, and sell aluminum-free high power laser worldwide for applications ranging from medicine to telecommunications to precision machining in the automotive industry. ... [read more]
 
294.  
 
New Alloy Semiconductors Detect IR
Sensor Technology - December 1, 1996
A group at Northwestern University developed new thallium based semiconductor alloys with great promise in the long wavelength 1 to 12 μm regions of the spectrum. The goal: high-performance, room-temperature infrared sensing. ... [read more]
 
295.  
Seeing a New Light; New Laser Boast Power, Reliability
Seeing a New Light; New Laser Boast Power, Reliability
Chicago Tribune - October 29, 1996
A high-power, low-energy miniature laser developed by Northwestern University researchers will be commercialized by Semiconductor Laser International Corp., the firm said Monday. ... [read more]
 
296.  
GaN Film Nears Perfection
GaN Film Nears Perfection
BMDO Update - September 1, 1996
Northwestern University's Center for Quantum Devices has grown some of the world's highest-quality III-Nitride films, with defect densities less than 10 million per centimeter squared. ... [read more]
 
297.  
MBE Growth of Indium Antimonide Reduces Cost of IR Arrays
MBE Growth of Indium Antimonide Reduces Cost of IR Arrays
Laser Focus World - July 1, 1996
At the Center for Quantum Devices (CQD) at NU, scientists have demonstrated 3 to 5 μm focal-plane 256 x256 pixel array imaging using indium antimonide (InSb) grown on a gallium arsenide (GaAs) substrate. ... [read more]
 
298.  
Ultraviolet Detectors
Ultraviolet Detectors
Compound Semiconductor - May 1, 1996
Researchers at Northwestern University's Center for Quantum Devices are actively pursuing the development of AlGaN for photoconductive and photovoltaic UV detectors. ... [read more]
 
299.  
Most Sensitive IR Detectors Developed by University Researchers
Most Sensitive IR Detectors Developed by University Researchers
Notherwestern Observer - April 22, 1996
Northwestern University Researchers have developed a new kind of semiconductor material for IR detectors that is far mode sensitive than any made to date. The new detectors should be able to see and image of a human body in extreme detail as a distance of several miles. ... [read more]
 
300.  
GaN Laser Diode Brightens Hopes for a Long-Lived, SHort-Wavlength Device
GaN Laser Diode Brightens Hopes for a Long-Lived, SHort-Wavlength Device
Physics Today - April 1, 1996
... [read more]
 

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