276. | Sharper Imaes Thanks to Bigger Substrates Inside R & D - November 12, 1997 A group at Northwestern University's Center for Quantum Devices has pushed the envelope by marrying higher quality, more uniform, cheaper and larger GaAs substrates with InSb films. ... [read more] |
277. | Northwestern Team Produces Quantum Cascade Laser Optics and Photonics News - November 1, 1997 Using a single-step Growth process, Northwestern University researchers have produced room-temperature 8.5 μmm quantum cascade lasers (QCL). The lasers produce 1 μsec pulses at 200 Hz with a peak output power of more than 700 mW at 79K, and 25 mW at 300 K. ... [read more] |
278. | Researchers Demonstrate High-Power, Aluminum-free Mid-IR Laser Photonics Spectra - October 1, 1997 Scientist at the Center for Quantum Devices have demonstrated and Al-free laser diode that emits up to 3 W at 3.2 μm. In comparison, similar Al-Free diode lasers have a maximum output of 100 mW, according to the center's director Dr. Manijeh Razeghi. ... [read more] |
279. | Northwestern Pushes Nitirde Research Electron Materials Technology News - September 1, 1997 Northwestern University's Center for Quantum Devices investigated ternary AlInN grown by MOCVD. They found the material to have a band-gap energy of 5.26 eV, (higher than previously reported) for a composition of Al0.92In0.08N ... [read more] |
280. | Single-Step QC Laser Emits at 8.5 μm Photonics Spectra - August 1, 1997 In the latest development in quantum cascade laser (QCL) research a group of Northwestern University scientist reported an 8.5-μm emission from a QCL grown in a single step by gas-source MBE. ... [read more] |
281. | High-Power Mid-Infrared Diode-Laser Bar Generates Peak Power of 3 W at 3.2 μm Laser Focus World - August 1, 1997 Scientist at Northwestern University have developed an antimonide-based laser bar that yields 3 W of peak power at 3.2 μm operating at 90 K. The device was tunable by injection current over a range of about 70 nm. ... [read more] |
282. | Semiconuctor Laser International NASA Tech Briefs - July 10, 1997 Dr. Geoffrey T. Burnham, SLI's president and CEO announced that demand for laser build using Northwestern University's patented Al-Free technology was so great that work would begin on a second phase of its manufacturing facility that would double its size. ... [read more] |
283. | Aluminum-Free Diode Lasers Lasers and Optronics - May 1, 1997 The Center for Quantum Devices at Northwestern University, has achieved operation at 60°C with 1 W of output power for a 100 μm-emitting aperture, over a device lifetime of 30,000 hours without any degradation in output power or change in wavelength, threshold current, or efficiency. ... [read more] |
284. | Pabricate Group III-Nitride Alloys on Saphire Microelectronics Technology Alert - April 21, 1997 The Norwestern group has already refined the deposition of epitaxial layers of III-Nitrides on sapphire substrates and extended the process. Using MOCVD, the alloys were fabricated on the sapphire substrates by varying the concentration of Al compounds to produce a variety of configurations of AlGaN ... [read more] |
285. | Race to Mid-IR Laser Emission Tightens Electron Materials Technology News - March 10, 1997 In Illinois researchers at Northwestern University's Center for Quantum Device (CQD) are testing 3.6 μm laser emission from antimonide-based materials. ... [read more] |
286. | InSb QWIP Shows Promise Electron Materials Technology News - March 10, 1997 Preliminary results at Northwestern University's Center for Quantum Devices (CQD) suggest a major breakthrough in carrier lifetimes has been achieved in infrared quantum well infrared photodetectors (QWIP) for logn wavelength focal plane arrays. ... [read more] |
287. | Al-Free Semiconductor Laser Has Greater Power, Lifetime Microelectronics Technology Alert - March 5, 1997 Northwester University has granted and exclusive license to SLI to manufacture and sell aluminum-free lasers. Applications are expected to cover telecommunications, medicine, the military, precision machining, and many other areas. ... [read more] |
288. | SLI Liscenses Annother Innovation Electron Materials Technology News - March 1, 1997 SLI said the license of Al-Free technology from Northwestern University will allow the company to produce better beam quality and stable output from semiconductor laser diodes. Dr. Burnham expects the data storage industry to benefit. ... [read more] |
289. | Building a Better High-Power Laser Diode Optics and Photonics News - February 10, 1997 While Northwestern University's Center for Quantum Devices holds patents for MOCVD growth of Aluminum-Free laser diode, researchers at SLI and Coherent are investigating a new MBE fabrication technique that offer higher yields in production and better processing technology than other diodes. ... [read more] |
290. | Aluminum-Free Lasers Boost Power Potential R&D bulletin - January 1, 1997 Semiconductor Laser Int., will commercialize miniature semiconductor laser designed by researchers at Northwestern University's Center for Quantum Devices. ... [read more] |
291. | IR Imaging Arrays Turn to Quantum Wells Phontonics Spectra - January 1, 1997 A new semiconductor-based IR detector technology for mid- and long-wavelength instruments is ready for the marketplace. The quantum-well infrared photodetector (QWIP) is based on absorption by confined carriers in multiple quantum wells. ... [read more] |
292. | Laser Startup Scores Al-feee Power Lasers III-V's Review - December 1, 1996 Semiconductor Laser International Corp. Endicott, NY, USA has been granted an exclusive license from Northwestern University's Center for Quantum Devices, to develop, manufacture, market, and sell aluminum free high power semiconductor lasers. ... [read more] |
293. | Laser Firm Get University Liscense for Marketing Al-Free Laser Diodes Photonics Spectra - December 1, 1996 Northwestern University has granted an exclusive license to Semiconductor Laser International Corp. (SLI) to develop, and sell aluminum-free high power laser worldwide for applications ranging from medicine to telecommunications to precision machining in the automotive industry. ... [read more] |
294. | New Alloy Semiconductors Detect IR Sensor Technology - December 1, 1996 A group at Northwestern University developed new thallium based semiconductor alloys with great promise in the long wavelength 1 to 12 μm regions of the spectrum. The goal: high-performance, room-temperature infrared sensing. ... [read more] |
295. | Seeing a New Light; New Laser Boast Power, Reliability Chicago Tribune - October 29, 1996 A high-power, low-energy miniature laser developed by Northwestern University researchers will be commercialized by Semiconductor Laser International Corp., the firm said Monday. ... [read more] |
296. | GaN Film Nears Perfection BMDO Update - September 1, 1996 Northwestern University's Center for Quantum Devices has grown some of the world's highest-quality III-Nitride films, with defect densities less than 10 million per centimeter squared. ... [read more] |
297. | MBE Growth of Indium Antimonide Reduces Cost of IR Arrays Laser Focus World - July 1, 1996 At the Center for Quantum Devices (CQD) at NU, scientists have demonstrated 3 to 5 μm focal-plane 256 x256 pixel array imaging using indium antimonide (InSb) grown on a gallium arsenide (GaAs) substrate. ... [read more] |
298. | Ultraviolet Detectors Compound Semiconductor - May 1, 1996 Researchers at Northwestern University's Center for Quantum Devices are actively pursuing the development of AlGaN for photoconductive and photovoltaic UV detectors. ... [read more] |
299. | Most Sensitive IR Detectors Developed by University Researchers Notherwestern Observer - April 22, 1996 Northwestern University Researchers have developed a new kind of semiconductor material for IR detectors that is far mode sensitive than any made to date. The new detectors should be able to see and image of a human body in extreme detail as a distance of several miles. ... [read more] |
300. | GaN Laser Diode Brightens Hopes for a Long-Lived, SHort-Wavlength Device Physics Today - April 1, 1996 ... [read more] |