241.
| Growth on GaN Improves Properties of UV LEDs
Compound Semiconductor - November 1, 2001
Researchers at Northwestern University have made the first report of significant improvements to the electrical and optical properties of 340 nm UV LEDs through growth onto free-standing GaN substrates. ... [read more]
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242.
| InAs/GaSb Type-II Superlatices: New Possibilities for Infrared Photon Sensing
Mid-Infrared Network Newsletter - October 1, 2001
High performance III-V long wavelength detectors have been designed and demonstrated by the Center for Quantum Devices, with potential for use in focal plane array applications. The devices were based on InAs/GaAs superlattices grown on GaAs and GaSb substrates by MBE. ... [read more]
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243.
| Blue Again
Photonics Spectra - January 1, 2001
... [read more]
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244.
| Manijeh Razeghi
OE Reports - August 1, 2000
Manijeh Razeghi is recognized for significantly advancing growth and characterization techniques for III-V and II-VI semiconductor structures for photonic and electronic devices. ... [read more]
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245.
| Researchers Aspire Towards Artificial Eyes
Laser Focus World - June 1, 2000
Researchers are Northwestern University are developing "artificial eyes" based on multispectral quantum well infrared photodetectors (QWIPs). ... [read more]
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246.
| My Genius Students
Northwestern - May 1, 2000
Professor Manijeh Razeghi: Whom do you admire? My genius students; Which talent would you most like to have? To be a good teacher, leader, and role model for young scientist; Which trait to you admire most in others? I admire people with principles, who are eager and curious to understand science. ... [read more]
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247.
| Manijeh Razeghi
Northwestern Perspective - April 1, 2000
Manijeh Razeghi is the Walter P. Murphy Professor of Electrical Engineering and computer Science and Center for Quantum Devices director, and Society of Women Engineers 1995 Achievement Awardee. ... [read more]
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248.
| Future So Blue
BMDO Update - April 1, 2000
The Center for Quantum Devices at Northwestern University has taken a significant step towards overcoming the limitations imposed by a sapphire substrate. They have designed a very simple structure that uses a GaInN/GaN multi-quantum well rather than AlGaN layers. ... [read more]
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249.
| Aluminum Gallium Nitride Photodiodes are Blind above 275 nm
Laser Focus World - March 1, 1999
There is great interest in solar-blind ultraviolet photon detectors, especially in the military, which could use such detectors for tracking missile launches. The best material for building such devices are compounds of aluminum gallium nitride (AlGaN ... [read more]
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250.
| Diode Laser Turns Up the Power in the Mid-IR
Photonics Spectra - February 1, 1999
Research at Northwestern University has introduced new options for semiconductor lasers operating in the mid-infrared range. ... [read more]
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Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu