251.     |  Boston Laser Moved to Upstate NY   Compound Semiconductor - July 1, 2003  After accumulating at least $20 million in losses as a public company SLI was under Chapter-11 bankruptcy.  The bankruptcy court approved the sale of SLI's assets to Boston Laser for $1.5 million.  As part of this acquisition, Boston Laser took over an exclusive license to Northwestern University's patents for Al-free laser diodes. ... [read more]   | 
252.     |  WiO Speakers Share Insights on Science Policy, Career Success   Women in Optics - April 1, 2003  Professor Manijeh Razeghi, Director of the Center for Quantum Devices at Northwestern University, provided an insightful look into her roles in the important discovery of new Al-free material systems used in high-power laser design. ... [read more]   | 
253.     |  Quantum Leaps   OE magazine - December 1, 2002  In addition to her work at Wright Patterson AFB, Dr. Gail Brown is an adjunct professor at Northwestern University.  In this role she works with Professor Manijeh Razeghi to advise students on their theses, attends their thesis defenses as a committe member, and conducts joint research with them. ... [read more]   | 
254.     |  Mid-IR Quantum Cascade Laser Produces 3.5 W at Room-Temperature   Photonics Spectra - July 1, 2002  Researchers at Northwestern University have demonstrated an InP-based quantum cascade laser (QCL) that produces 3.5 W of power of 9 μm-radiation at room temperature. ... [read more]   | 
255.     |  Hooding Cerimony 2002   ECE News - June 1, 2002  Professor Manijeh Razeghi and other ECE faculty attended the 2002 hooding of Dr. Steve Slivken and Dr. Brett Lane. ... [read more]   | 
256.     |  Sensitive GaInAs/InP QWIPs Grown on Silicon   Compound Semiconductor - May 1, 2002  Quantum-well infrared photodetectors (QWIPs) are of interest for many commercial, industrial, and military applications. A team at Northwestern University has published an in situ thermal annealing technique that reduces the dislocation density when growing these devices ... [read more]   | 
257.     |  Growth on GaN Improves Properties of UV LEDs   Compound Semiconductor - November 1, 2001  Researchers at Northwestern University have made the first report of significant improvements to the electrical and optical properties of 340 nm UV LEDs through growth onto free-standing GaN substrates. ... [read more]   | 
258.      |  InAs/GaSb Type-II Superlatices: New Possibilities for Infrared Photon Sensing   Mid-Infrared Network Newsletter - October 1, 2001  High performance III-V long wavelength detectors have been designed and demonstrated by the Center for Quantum Devices, with potential for use in focal plane array applications.  The devices were based on InAs/GaAs superlattices grown on GaAs and GaSb substrates by MBE. ... [read more]   | 
259.     |  Blue Again   Photonics Spectra - January 1, 2001   ... [read more]   | 
260.     |  Manijeh Razeghi   OE Reports - August 1, 2000  Manijeh Razeghi is recognized for significantly advancing growth and characterization techniques for III-V and II-VI semiconductor structures for photonic   and electronic devices. ... [read more]   |