281.
| MBE Growth of Indium Antimonide Reduces Cost of IR Arrays
Laser Focus World - July 1, 1996
At the Center for Quantum Devices (CQD) at NU, scientists have demonstrated 3 to 5 μm focal-plane 256 x256 pixel array imaging using indium antimonide (InSb) grown on a gallium arsenide (GaAs) substrate. ... [read more]
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282.
| Ultraviolet Detectors
Compound Semiconductor - May 1, 1996
Researchers at Northwestern University's Center for Quantum Devices are actively pursuing the development of AlGaN for photoconductive and photovoltaic UV detectors. ... [read more]
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283.
| Most Sensitive IR Detectors Developed by University Researchers
Notherwestern Observer - April 22, 1996
Northwestern University Researchers have developed a new kind of semiconductor material for IR detectors that is far mode sensitive than any made to date. The new detectors should be able to see and image of a human body in extreme detail as a distance of several miles. ... [read more]
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284.
| GaN Laser Diode Brightens Hopes for a Long-Lived, SHort-Wavlength Device
Physics Today - April 1, 1996
... [read more]
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285.
| Northwestern InSb Research Revisited
Electron Materials Technology News - April 1, 1996
Unfortunately the previous story about Northwestern university's QWIPs was incorrect. While the Center is working on QWIPs, the work discussed involved simple InSb p-n junction devices. ... [read more]
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286.
| Some Like it Hot
Chemistry and Industry - February 19, 1996
Big brother may soon have a new way of watching you, thanks to researchers at Northwestern University. They've used advanced film deposition techniques to make heat-sensitive detectors so sensitive that they can provide detailed images of the human body from several miles away. ... [read more]
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287.
| Cameras That Go Infrared in the Night
New Scientist - February 17, 1996
Infrared detectors made from materials already used in lasers promise to provide the best infrared cameras and night-vision devices yet. These quantum well infrared photodetectors, or QWIPS are made from alternating layers of semiconductor materials, arranged atom by atom into layers just 10 molecules thick, says Manijeh Razeghi. ... [read more]
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288.
| Growth of Ge-Dopes AlGaN
Compound Semiconductor - January 31, 1996
Photoluminescence data for Al[x]Ga[1-x]N samples with x < 0.2 displayed sharp band edge emission and a bread deep-level emission near 2.4 eV. Ge doping eliminated the deep level emission features observed in un-dopes AlGaN samples suggesting that this deep level emission may be related to Ga vacancies that could be filled by Ge donor impurities ... [read more]
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289.
| Razeghi, Faber Reconized for Achievement
Observer - November 6, 1995
Two faculty members at the Robert R. McCormick School of Engineering and Applied Science -- Manijeh Razeghi and Katherine Faber -- have been cited by the Society of Women Engineers for outstanding achievements. ... [read more]
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290.
| Aluminum-Free Diode Lasers Last Longer
Laser Focus World - November 1, 1995
Ongoing test suggest both rugged operation and long life for InGaAsP based aluminum-free diode lasers fabricated by researchers at Northwestern University. Elimination of aluminum removes an easily oxidized specie that spreads performance-degrading defects through the structure by forming light-absorbing dark lines. ... [read more]
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu