| 501. | InAs-GaSb Type II Superlattice for VLWIR Detectors
Quantum Electronics Conference
Glasgow, Scotland -- September 3, 2001
|
| 502. | Gated Nano-pillars for Uncooled Tunable Infrared Detectors
3rd Workshop on the Fabrication, Characterization and Application of III-V Semiconductors
Snowbird, UT -- July 31, 2001
|
| 503. | Type II Superlattices (InAs/GaSb/AlAs): Alternative for MCT for Infrared FPA
SPIE International Symposium on Optical Science and Technology, Materials for Infrared Detectors
San Diego, CA -- July 29, 2001
|
| 504. | Gated Nano-pillars for Uncooled Tunable Infrared Detectors
Future Trends in Microelectronics (FTM): The Nano Millennium
Ile de Bendor, France -- June 25, 2001
|
| 505. | Type II Superlattices for VLWIR
Air Force Office of Scientific Research, Semiconductor Detector Program Review
Williamsburg, VA -- June 4, 2001
|
| 506. | AlxGa1-xN for Solar Blind Focal Plane Arrays
DARPA MTO IR/UV Imaging Technologies Review Meeting
Panama City, FL -- May 22, 2001
|
| 507. | Recent Advances in Mid-Infrared Semiconductor Laser Diodes
Solid State Diode Laser Review (SSDLTR) Conference
Albuquerque, NM -- May 21, 2001
|
| 508. | Quantization for High Performance Infrared Laser Diodes
1st Annual U.S.-Korea-Japan Workshop on Nanostructure Science/Technology (WNST)
Hanyang University, Seoul, Korea -- April 23, 2001
|
| 509. | Enabling Technologies for the 21st Century, Overview of CQD Research Activity
Review of Center for Optoelectronic Devices, Interconnects and Packaging (COEDIP)
University of Arizona, Tucson -- April 11, 2001
|
| 510. | Quantum Dots of GaN Based Materials for 280 nm Lasers
III-Nitride UV Emitters Study Group Conference, Defense Advanced Research Projects Agency
Arlington, VA -- April 9, 2001
|
| 511. | CQD Vision of the III-V Semiconductor Sb-based Mesoscopic Optoelectronic Devices
Mid-Infrared Optoelectronics Materials and Devices (MIOMD) 4th International Conference
Montpellier, France -- April 1, 2001
|
| 512. | Infrared Quantum Well Laser Diodes: State of the Art and Future Trends
Advanced Research Workshop on Semiconductor Nanostructures
Queenstown, New Zealand -- February 5, 2001
|
| 513. | High Performance Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
SPIE International Symposium on Optoelectronics 2001, In-Plane Semiconductor Lasers V
San Jose, CA -- January 22, 2001
|
| 514. | Novel Sb-based Alloy for Uncooled Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
|
| 515. | AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
|
| 516. | High Performance Type-II InAs/GaSb Superlattice Photodiodes
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
|
| 517. | Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
|
| 518. | Quantum Dot Infrared Photodetectors Compared with QWIPs
SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI
San Jose, CA -- January 22, 2001
|
| 519. | Enabling Technology for the New Millenium: Toward Atomic Scale
Colloquium Seminar, Department of Physics, University of Illinois at Chicago
Chicago, IL -- January 17, 2001
|
| 520. | AlxGa1-xN for Solar Blind UV Detectors
International Specialist Meeting on Bulk Nitride Growth and Related Techniques
Parana, Brazil -- November 12, 2000
|
| 521. | Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
10th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2000)
Cheju Island, Korea -- November 1, 2000
|
| 522. | Uncooled Integrated Sensors
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
|
| 523. | High Performance Type-II Superlattices for Uncooled and Very Long Wavelength Infrared Detection
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
|
| 524. | Advanced Lasers and Detector Integrated Systems
DARPA Optoelectronics Review Meeting
Cincinnati, OH -- October 17, 2000
|
| 525. | Miniaturization: Enabling Technology for the New Millenium
Keynote Address, International Conference on Solid State Crystals - Materials Science and Application
Zakopane, Poland -- October 9, 2000
|
| 526. | Quantum Sensing
Office of Naval Research
Washington, DC -- September 15, 2000
|
| 527. | Past, Present and Future of Infrared Photodetectors
Air Force Office of Scientific Research
Arlington, VA -- September 14, 2000
|
| 528. | Advanced Lasers and Detector Integrated Systems (ALADINS)
DARPA Photonic Wavelength and Spatial Signal Processing (PWASSP) Review Meeting
Williamsburg, VA -- September 12, 2000
|
| 529. | Quantum Well Infrared Photodetectors (3-20 µm) FPA: Monolithic Integration with Si-based ROIC for Low Cost and High Performance
SPIE International Symposium on Optical Science and Technology: Infrared Technology and Applications XXVI
San Diego, CA -- July 30, 2000
|
| 530. | Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices
QWIP Workshop
Dana Point, CA -- July 27, 2000
|
| 531. | Recent Advances and Future Trends of High Power IR Laser Diodes
Tenth International Conference on Laser Optics
St. Petersburg, Russia -- June 26, 2000
|
| 532. | Material Development and Applications for UV Detectors
Nagoya Institute of Technology
Nagoya, Japan -- June 12, 2000
|
| 533. | Low Threshold, High Power Quantum Cascade Lasers Emitting at 9 µm Grown by Gas-MBE
Solid State and Diode Laser Technology Review (SSDLTR)
Albuquerque, NM -- June 5, 2000
|
| 534. | Novel Sb-based Materials for Uncooled Infrared Photodetector Applications
Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X)
Sapporo, Japan -- June 5, 2000
|
| 535. | UV Photodetectors
6th Annual Widegap III-Nitride Workshop 2000
Richmond, VA -- March 12, 2000
|
| 536. | Current Progress on Infrared (IR) and Ultraviolet (UV) Photodetectors
Rockwell Science Center
Thousand Oaks, CA -- February 28, 2000
|
| 537. | LEO of III-Nitride on Al2O3and Si Substrates
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 538. | Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 539. | Growth and Characterization of Very Long-Wavelength Type-II Infrared Detectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 540. | Growth and Characterization of Type-II Non-Equilibrium Photovoltac Detectors for Long-Wavelength Infrared Range
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 541. | High-Responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 542. | Growth and Optimization of GaInAs/InP Material System for Quantum Well Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 543. | Very High-Efficiency AlxGa1-xN p-i-n Solar Blind Ultraviolet Photodetectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
|
| 544. | Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth
10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99)
New Delhi, India -- December 14, 1999
|
| 545. | New Approaches in Uncooled Infrared Photodetectors: Sb-Based III-V Compound Semiconductors
10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99)
New Delhi, India -- December 14, 1999
|
| 546. | Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
|
| 547. | High Quality, Low Noise III-N Photodiodes
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
|
| 548. | First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared Detection
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
|
| 549. | Lateral Epitaxial Overgrowth of GaN: Materials and Devices
International Semiconductor Device Research Symposium (ISDRS ‘99)
Charlottesville, VA -- December 1, 1999
|
| 550. | High Power 3-12 µm Laser Diodes: Recent Advances and Future Trends
LEOS Annual Meeting
San Francisco, CA -- November 8, 1999
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu