Conferences by    
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501.   Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 Ám Wavelength Range
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
502.   Internal Street Around Micropipes in 6H-SiC Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
503.   Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
504.   AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
505.   Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
506.   Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
507.   Recent Advances in Semiconductor Infrared Lasers
Chemistry Department, Texas A&M University
College Station, TX -- December 10, 1998
 
508.   Development of high-performance III-Nitride-based semiconductor devices
9th International Symposium on the Physics of Semiconductors and Applications (ISPSA-98)
Seoul, Korea -- November 6, 1998
 
509.   Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 Ám Room Temperature Detectors
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
 
510.   Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
 
511.   Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices
International Conference on Solid State Crystals - Materials Science and Applications
Zakopane, Poland -- October 12, 1998
 
512.   Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap Semiconductors
International Symposium on Compound Semiconductors (ISCS)
Nara, Japan -- October 12, 1998
 
513.   Mid-Infrared Type II Bipolar LEDs and Lasers for Chemcial Sensing
OSA Annual Meeting/Interdisciplinary Laser Science Conference XIV
Baltimore, MD -- October 4, 1998
 
514.   Quantum Well Infrared Photodetectors (QWIPs) for IR Imaging
Physics at the Turn of the 21st Century Conference
St. Petersburg, Russia -- September 28, 1998
 
515.   Recent Advance fo Mid-Infrared Semiconductor Lasers
Semiconductor Science and Technology Ĺ98
La Jolla, CA -- September 7, 1998
 
516.   Growth of InGaAs/InGaP Quantum Dots Light Emitting Sources by Low-Pressure MOCVD
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
 
517.   Growth and Characterization of InGaAs/InGaP Quantum Dots for Mid-Infrared Photodetectors
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
 
518.   Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (l = 0.808 Ám) Laser Diodes
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
 
519.   Lateral Epitaxial Overgrowth of GaN Thin Films on Sapphire and Silicon
Wide Bandgap Nitride Semiconductor Workshop
St. Louis, MO -- August 4, 1998
 
520.   Exploration of the Entire Spectrum of III-V Semiconductors for Opto-electronics
23rd International Summer College on Physics and Contemporary Needs
Bhurban, Pakistan -- June 26, 1998
 
521.   21st Century: The Final Frontier for III-Nitride Materials and Devices
Future Trends in Microelectronics
Ile des Embiez, France -- May 31, 1998
 
522.   InAsSb(P)-based Interband Mi-Infrared (3-5 Ám) Laser: Problems and Future Directions
CLEO Conference, ôSemiconductor Laser Workshop"
San Francisco, CA -- May 8, 1998
 
523.   Low Threshold Aluminum Free GaInN/GaN Multi-Quantum Well Blue Lasers: Material growth, Characterization, Device Fabrication and Testing
Cornell University
Ithaca, NY -- March 10, 1998
 
524.   Quantum Cascade Lasers Grown by Gas-Source Molecular beam Epitaxy
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
 
525.   High Power InAsSb/InPAsSb/InAs Mid-Infrared Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
 
526.   Growth, Characterization and Device Fabrication of Mid-Infrared Type II Bipolar Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
 
527.   Narrow gap semiconductor photodiodes
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 
528.   Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 
529.   Electrical transport properties of highly doped N-type GaN epilayers
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 
530.   Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 
531.   Multiple quantum well structures for multicolor infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 
532.   GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 
533.   Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
 
534.   8.5 Ám room-temperature quantum cascade lasers grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Integrated Optic Devices II
San Jose, CA -- January 24, 1998
 
535.   Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition
SPIE Photonics West '98, In-Plane Semiconductor Laser
San Jose, CA -- January 24, 1998
 
536.   Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
 
537.   New Developments in III-Nitride Material and Device Applications
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
 
538.   InP-based Multi-Spectral Quantum Well Infrared Photodetectors
International Semiconductor Device Research Symposium (ISDRS Ĺ97)
Charlottesville, VA -- December 11, 1997
 
539.   Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
International Semiconductor Device Research Symposium (ISDRS Ĺ97)
Charlottesville, VA -- December 11, 1997
 
540.   Trends in Optoelectronics
Conference on Gallium Arsenide & Other Compound Semiconductors
San Diego, CA -- November 12, 1997
 
541.   Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical Communication and Processing Applications
SPIE Conference, Design and Manufacturing of WDM Devices
Dallas, TX -- November 4, 1997
 
542.   Sb-based Infrared Materials for Uncooled Photodetector Applications
192nd Meeting of the Electrochemical Society, Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays-Physcs and Applications
Paris, France -- August 31, 1997
 
543.   III-Nitrides Grown Using Trimethygallium and Triethylgallium
19th International Conference on Defects in Semiconductors (ICDS)
Aveiro, Portugal -- June 21, 1997
 
544.   High Power Midwave-Infrared InAsSb/InPAsSb Lasers for 3-5 Ám
Diode Laser Technology Review Meeting
Albuquerque, NM -- June 9, 1997
 
545.   Microscopes: Tools for Probing Atomic Arrangements in Semiconductor Thin Films
Scanning Microscopy Meeting, Formation and Properties of Nanoscaled Structures Symposium
Chicago, IL -- May 12, 1997
 
546.   Exploration of entire range III-V semiconductor materials and devices
Department of Electrical Engineering
University of Notre Dame, IN -- April 22, 1997
 
547.   Quantum Well Infrared Photodetectors (QWIPs)
Electrical Engineering and Computer Science Department
University of Illinois at Chicago, IL -- April 3, 1997
 
548.   Heteroepitaxial AlGaN films for ultraviolet photodetector applications
III-Nitride Workshop
St. Louis, MO -- March 11, 1997
 
549.   MBE of InSb for focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 
550.   Growth models of GaN thin films based on crystal chemistry
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
 

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