501. | InAs-GaSb Type II Superlattice for VLWIR Detectors Quantum Electronics Conference Glasgow, Scotland -- September 3, 2001 |
502. | Gated Nano-pillars for Uncooled Tunable Infrared Detectors 3rd Workshop on the Fabrication, Characterization and Application of III-V Semiconductors Snowbird, UT -- July 31, 2001 |
503. | Type II Superlattices (InAs/GaSb/AlAs): Alternative for MCT for Infrared FPA SPIE International Symposium on Optical Science and Technology, Materials for Infrared Detectors San Diego, CA -- July 29, 2001 |
504. | Gated Nano-pillars for Uncooled Tunable Infrared Detectors Future Trends in Microelectronics (FTM): The Nano Millennium Ile de Bendor, France -- June 25, 2001 |
505. | Type II Superlattices for VLWIR Air Force Office of Scientific Research, Semiconductor Detector Program Review Williamsburg, VA -- June 4, 2001 |
506. | AlxGa1-xN for Solar Blind Focal Plane Arrays DARPA MTO IR/UV Imaging Technologies Review Meeting Panama City, FL -- May 22, 2001 |
507. | Recent Advances in Mid-Infrared Semiconductor Laser Diodes Solid State Diode Laser Review (SSDLTR) Conference Albuquerque, NM -- May 21, 2001 |
508. | Quantization for High Performance Infrared Laser Diodes 1st Annual U.S.-Korea-Japan Workshop on Nanostructure Science/Technology (WNST) Hanyang University, Seoul, Korea -- April 23, 2001 |
509. | Enabling Technologies for the 21st Century, Overview of CQD Research Activity Review of Center for Optoelectronic Devices, Interconnects and Packaging (COEDIP) University of Arizona, Tucson -- April 11, 2001 |
510. | Quantum Dots of GaN Based Materials for 280 nm Lasers III-Nitride UV Emitters Study Group Conference, Defense Advanced Research Projects Agency Arlington, VA -- April 9, 2001 |
511. | CQD Vision of the III-V Semiconductor Sb-based Mesoscopic Optoelectronic Devices Mid-Infrared Optoelectronics Materials and Devices (MIOMD) 4th International Conference Montpellier, France -- April 1, 2001 |
512. | Infrared Quantum Well Laser Diodes: State of the Art and Future Trends Advanced Research Workshop on Semiconductor Nanostructures Queenstown, New Zealand -- February 5, 2001 |
513. | High Performance Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy SPIE International Symposium on Optoelectronics 2001, In-Plane Semiconductor Lasers V San Jose, CA -- January 22, 2001 |
514. | Novel Sb-based Alloy for Uncooled Infrared Photodetector Applications SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI San Jose, CA -- January 22, 2001 |
515. | AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI San Jose, CA -- January 22, 2001 |
516. | High Performance Type-II InAs/GaSb Superlattice Photodiodes SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI San Jose, CA -- January 22, 2001 |
517. | Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI San Jose, CA -- January 22, 2001 |
518. | Quantum Dot Infrared Photodetectors Compared with QWIPs SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI San Jose, CA -- January 22, 2001 |
519. | Enabling Technology for the New Millenium: Toward Atomic Scale Colloquium Seminar, Department of Physics, University of Illinois at Chicago Chicago, IL -- January 17, 2001 |
520. | AlxGa1-xN for Solar Blind UV Detectors International Specialist Meeting on Bulk Nitride Growth and Related Techniques Parana, Brazil -- November 12, 2000 |
521. | Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices 10th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2000) Cheju Island, Korea -- November 1, 2000 |
522. | Uncooled Integrated Sensors DARPA Optoelectronics Review Meeting Cincinnati, OH -- October 17, 2000 |
523. | High Performance Type-II Superlattices for Uncooled and Very Long Wavelength Infrared Detection DARPA Optoelectronics Review Meeting Cincinnati, OH -- October 17, 2000 |
524. | Advanced Lasers and Detector Integrated Systems DARPA Optoelectronics Review Meeting Cincinnati, OH -- October 17, 2000 |
525. | Miniaturization: Enabling Technology for the New Millenium Keynote Address, International Conference on Solid State Crystals - Materials Science and Application Zakopane, Poland -- October 9, 2000 |
526. | Quantum Sensing Office of Naval Research Washington, DC -- September 15, 2000 |
527. | Past, Present and Future of Infrared Photodetectors Air Force Office of Scientific Research Arlington, VA -- September 14, 2000 |
528. | Advanced Lasers and Detector Integrated Systems (ALADINS) DARPA Photonic Wavelength and Spatial Signal Processing (PWASSP) Review Meeting Williamsburg, VA -- September 12, 2000 |
529. | Quantum Well Infrared Photodetectors (3-20 µm) FPA: Monolithic Integration with Si-based ROIC for Low Cost and High Performance SPIE International Symposium on Optical Science and Technology: Infrared Technology and Applications XXVI San Diego, CA -- July 30, 2000 |
530. | Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices QWIP Workshop Dana Point, CA -- July 27, 2000 |
531. | Recent Advances and Future Trends of High Power IR Laser Diodes Tenth International Conference on Laser Optics St. Petersburg, Russia -- June 26, 2000 |
532. | Material Development and Applications for UV Detectors Nagoya Institute of Technology Nagoya, Japan -- June 12, 2000 |
533. | Low Threshold, High Power Quantum Cascade Lasers Emitting at 9 µm Grown by Gas-MBE Solid State and Diode Laser Technology Review (SSDLTR) Albuquerque, NM -- June 5, 2000 |
534. | Novel Sb-based Materials for Uncooled Infrared Photodetector Applications Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X) Sapporo, Japan -- June 5, 2000 |
535. | UV Photodetectors 6th Annual Widegap III-Nitride Workshop 2000 Richmond, VA -- March 12, 2000 |
536. | Current Progress on Infrared (IR) and Ultraviolet (UV) Photodetectors Rockwell Science Center Thousand Oaks, CA -- February 28, 2000 |
537. | LEO of III-Nitride on Al2O3and Si Substrates SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V San Jose, CA -- January 26, 2000 |
538. | Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V San Jose, CA -- January 26, 2000 |
539. | Growth and Characterization of Very Long-Wavelength Type-II Infrared Detectors SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V San Jose, CA -- January 26, 2000 |
540. | Growth and Characterization of Type-II Non-Equilibrium Photovoltac Detectors for Long-Wavelength Infrared Range SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V San Jose, CA -- January 26, 2000 |
541. | High-Responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V San Jose, CA -- January 26, 2000 |
542. | Growth and Optimization of GaInAs/InP Material System for Quantum Well Infrared Photodetector Applications SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V San Jose, CA -- January 26, 2000 |
543. | Very High-Efficiency AlxGa1-xN p-i-n Solar Blind Ultraviolet Photodetectors SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V San Jose, CA -- January 26, 2000 |
544. | Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth 10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99) New Delhi, India -- December 14, 1999 |
545. | New Approaches in Uncooled Infrared Photodetectors: Sb-Based III-V Compound Semiconductors 10th International Workshop on Physics of Semiconductor Devices (IWPSD ’99) New Delhi, India -- December 14, 1999 |
546. | Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices International Semiconductor Device Research Symposium (ISDRS ‘99) Charlottesville, VA -- December 1, 1999 |
547. | High Quality, Low Noise III-N Photodiodes International Semiconductor Device Research Symposium (ISDRS ‘99) Charlottesville, VA -- December 1, 1999 |
548. | First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared Detection International Semiconductor Device Research Symposium (ISDRS ‘99) Charlottesville, VA -- December 1, 1999 |
549. | Lateral Epitaxial Overgrowth of GaN: Materials and Devices International Semiconductor Device Research Symposium (ISDRS ‘99) Charlottesville, VA -- December 1, 1999 |
550. | High Power 3-12 µm Laser Diodes: Recent Advances and Future Trends LEOS Annual Meeting San Francisco, CA -- November 8, 1999 |