Conferences by    
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551.   Growth and Characterization of Very Long-Wavelength Type-II Infrared Detectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
552.   Growth and Characterization of Type-II Non-Equilibrium Photovoltac Detectors for Long-Wavelength Infrared Range
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
553.   High-Responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
554.   Growth and Optimization of GaInAs/InP Material System for Quantum Well Infrared Photodetector Applications
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
555.   Very High-Efficiency AlxGa1-xN p-i-n Solar Blind Ultraviolet Photodetectors
SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V
San Jose, CA -- January 26, 2000
 
556.   Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth
10th International Workshop on Physics of Semiconductor Devices (IWPSD 99)
New Delhi, India -- December 14, 1999
 
557.   New Approaches in Uncooled Infrared Photodetectors: Sb-Based III-V Compound Semiconductors
10th International Workshop on Physics of Semiconductor Devices (IWPSD 99)
New Delhi, India -- December 14, 1999
 
558.   Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based Superlattices
International Semiconductor Device Research Symposium (ISDRS 99)
Charlottesville, VA -- December 1, 1999
 
559.   High Quality, Low Noise III-N Photodiodes
International Semiconductor Device Research Symposium (ISDRS 99)
Charlottesville, VA -- December 1, 1999
 
560.   First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared Detection
International Semiconductor Device Research Symposium (ISDRS 99)
Charlottesville, VA -- December 1, 1999
 
561.   Lateral Epitaxial Overgrowth of GaN: Materials and Devices
International Semiconductor Device Research Symposium (ISDRS 99)
Charlottesville, VA -- December 1, 1999
 
562.   High Power 3-12 m Laser Diodes: Recent Advances and Future Trends
LEOS Annual Meeting
San Francisco, CA -- November 8, 1999
 
563.   Roadmap of Semiconductor Laser Diodes for WDM: Recent Advances and Future Trends
WDM-SA 99 - Wavelength Division Multiplexing - Systems and Applications, National Institute of Standards and Technology (NIST)
Gaithersburg, MD -- November 3, 1999
 
564.   GaInAsP-GaAs VLW QWIPs
Air Force Office of Scientific Research Program Review Meeting
Dayton, OH -- September 28, 1999
 
565.   Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications
Low Dimensional Structures and Devices (LDSD99)
Alanya, Turkey -- September 15, 1999
 
566.   High power mid-infrared III-V semiconductor injection laser diodes
Low Dimensional Structures and Devices (LDSD99)
Alanya, Turkey -- September 15, 1999
 
567.   MOCVD Growth and Characterization of GaN on Si Substrates
Gallium Nitride Electronic Device Workshop, Cornell University
Ithaca, NY -- August 16, 1999
 
568.   LEO of III-Nitride on Al2 O3 and Si substrates
Lateral Epitaxial Overgrowth (From Theory to Design) Workshop
Juneau, Alaska -- August 2, 1999
 
569.   Solard Blind Detectors Arrays
DARPA/MTO Optoelectronics Review Meeting
San Diego, CA -- August 2, 1999
 
570.   High Power 3-12 m Semiconductor Lasers: Roadmap for the 21st Century
Workshop on Frontier in Electronics (WOFE-99)
Grenoble, France -- May 30, 1999
 
571.   High power InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3-4 m
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 
572.   InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 m grown by low pressure metal-organic chemical vapor deposition
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 
573.   Application of a GaN photodiode for autocorrelation measurements of visible femtosecond pulses
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
 
574.   High Power Infrared Injection Laser Diodes (3-10 m)
Diode Laser Technology Review (DLTR)
Ft. Walton Beach, FL -- May 11, 1999
 
575.   Highlights of High Power Infrared Injection Laser Diodes (3-10 m)
Naval Research Laboratory
Washington, DC -- May 5, 1999
 
576.   High Power 3-5 m InAsSb-based Lasers
DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP)
Arlington, VA -- May 3, 1999
 
577.   Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI)
Naval Research Laboratory
Washington, DC -- March 16, 1999
 
578.   Demonstration of Uncooled InAsSb Photodetectors for Military Sensors
DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging
Alexandria, VA -- March 16, 1999
 
579.   Recent Advances and Future Trends for Compound Semiconductor Optoelectronic Devices
Compound Semiconductor Outlook 99 Conference
San Diego, CA -- March 1, 1999
 
580.   LEO of GaN on sapphire and Si substrates
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 99)
New Orleans, LA -- February 22, 1999
 
581.   UV, MSM and p-i-n detectors, UV blue laser diodes
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 99)
New Orleans, LA -- February 22, 1999
 
582.   Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
583.   Electrical Characterization of AlxGa1-xN for UV Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
584.   Multi-color 4-20 m InP-based Quantum Well Infrared Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
585.   Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
586.   Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
587.   Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 m Wavelength Range
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
588.   Internal Street Around Micropipes in 6H-SiC Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
589.   Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
590.   AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
591.   Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
592.   Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
 
593.   Recent Advances in Semiconductor Infrared Lasers
Chemistry Department, Texas A&M University
College Station, TX -- December 10, 1998
 
594.   Development of high-performance III-Nitride-based semiconductor devices
9th International Symposium on the Physics of Semiconductors and Applications (ISPSA-98)
Seoul, Korea -- November 6, 1998
 
595.   Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 m Room Temperature Detectors
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
 
596.   Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
 
597.   Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices
International Conference on Solid State Crystals - Materials Science and Applications
Zakopane, Poland -- October 12, 1998
 
598.   Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap Semiconductors
International Symposium on Compound Semiconductors (ISCS)
Nara, Japan -- October 12, 1998
 
599.   Mid-Infrared Type II Bipolar LEDs and Lasers for Chemcial Sensing
OSA Annual Meeting/Interdisciplinary Laser Science Conference XIV
Baltimore, MD -- October 4, 1998
 
600.   Quantum Well Infrared Photodetectors (QWIPs) for IR Imaging
Physics at the Turn of the 21st Century Conference
St. Petersburg, Russia -- September 28, 1998
 

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