| 551. | Roadmap of Semiconductor Laser Diodes for WDM: Recent Advances and Future Trends
WDM-SA ‘99 - Wavelength Division Multiplexing - Systems and Applications, National Institute of Standards and Technology (NIST)
Gaithersburg, MD -- November 3, 1999
|
| 552. | GaInAsP-GaAs VLW QWIPs
Air Force Office of Scientific Research Program Review Meeting
Dayton, OH -- September 28, 1999
|
| 553. | Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications
Low Dimensional Structures and Devices (LDSD’99)
Alanya, Turkey -- September 15, 1999
|
| 554. | High power mid-infrared III-V semiconductor injection laser diodes
Low Dimensional Structures and Devices (LDSD’99)
Alanya, Turkey -- September 15, 1999
|
| 555. | MOCVD Growth and Characterization of GaN on Si Substrates
Gallium Nitride Electronic Device Workshop, Cornell University
Ithaca, NY -- August 16, 1999
|
| 556. | LEO of III-Nitride on Al2 O3 and Si substrates
Lateral Epitaxial Overgrowth (From Theory to Design) Workshop
Juneau, Alaska -- August 2, 1999
|
| 557. | Solard Blind Detectors Arrays
DARPA/MTO Optoelectronics Review Meeting
San Diego, CA -- August 2, 1999
|
| 558. | High Power 3-12 µm Semiconductor Lasers: Roadmap for the 21st Century
Workshop on Frontier in Electronics (WOFE-99)
Grenoble, France -- May 30, 1999
|
| 559. | High power InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3-4 µm
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
|
| 560. | InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 µm grown by low pressure metal-organic chemical vapor deposition
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
|
| 561. | Application of a GaN photodiode for autocorrelation measurements of visible femtosecond pulses
Conference on Lasers and Electro-Optics (CLEO)
Baltimore, MD -- May 23, 1999
|
| 562. | High Power Infrared Injection Laser Diodes (3-10 µm)
Diode Laser Technology Review (DLTR)
Ft. Walton Beach, FL -- May 11, 1999
|
| 563. | Highlights of High Power Infrared Injection Laser Diodes (3-10 µm)
Naval Research Laboratory
Washington, DC -- May 5, 1999
|
| 564. | High Power 3-5 µm InAsSb-based Lasers
DARPA Workshop - Photonic Wavelength and Spatial Signal Processing (WASSP)
Arlington, VA -- May 3, 1999
|
| 565. | Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI)
Naval Research Laboratory
Washington, DC -- March 16, 1999
|
| 566. | Demonstration of Uncooled InAsSb Photodetectors for Military Sensors
DARPA Workshop on Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging
Alexandria, VA -- March 16, 1999
|
| 567. | Recent Advances and Future Trends for Compound Semiconductor Optoelectronic Devices
Compound Semiconductor Outlook ‘99 Conference
San Diego, CA -- March 1, 1999
|
| 568. | LEO of GaN on sapphire and Si substrates
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99)
New Orleans, LA -- February 22, 1999
|
| 569. | UV, MSM and p-i-n detectors, UV blue laser diodes
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD ‘99)
New Orleans, LA -- February 22, 1999
|
| 570. | Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 571. | Electrical Characterization of AlxGa1-xN for UV Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 572. | Multi-color 4-20 µm InP-based Quantum Well Infrared Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 573. | Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 574. | Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 575. | Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 µm Wavelength Range
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 576. | Internal Street Around Micropipes in 6H-SiC Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 577. | Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector Applications
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 578. | AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 579. | Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 580. | Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD
SPIE Photonics West '99, Photodetectors: Materials and Devices IV
San Jose, CA -- January 24, 1999
|
| 581. | Recent Advances in Semiconductor Infrared Lasers
Chemistry Department, Texas A&M University
College Station, TX -- December 10, 1998
|
| 582. | Development of high-performance III-Nitride-based semiconductor devices
9th International Symposium on the Physics of Semiconductors and Applications (ISPSA-98)
Seoul, Korea -- November 6, 1998
|
| 583. | Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 µm Room Temperature Detectors
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
|
| 584. | Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD
6th International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society
Boston, MA -- November 5, 1998
|
| 585. | Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices
International Conference on Solid State Crystals - Materials Science and Applications
Zakopane, Poland -- October 12, 1998
|
| 586. | Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap Semiconductors
International Symposium on Compound Semiconductors (ISCS)
Nara, Japan -- October 12, 1998
|
| 587. | Mid-Infrared Type II Bipolar LEDs and Lasers for Chemcial Sensing
OSA Annual Meeting/Interdisciplinary Laser Science Conference XIV
Baltimore, MD -- October 4, 1998
|
| 588. | Quantum Well Infrared Photodetectors (QWIPs) for IR Imaging
Physics at the Turn of the 21st Century Conference
St. Petersburg, Russia -- September 28, 1998
|
| 589. | Recent Advance fo Mid-Infrared Semiconductor Lasers
Semiconductor Science and Technology ‘98
La Jolla, CA -- September 7, 1998
|
| 590. | Growth of InGaAs/InGaP Quantum Dots Light Emitting Sources by Low-Pressure MOCVD
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
|
| 591. | Growth and Characterization of InGaAs/InGaP Quantum Dots for Mid-Infrared Photodetectors
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
|
| 592. | Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (l = 0.808 µm) Laser Diodes
4th International Conference on Electronic Materials (ICEM-98)
Cheju Island, Korea -- August 24, 1998
|
| 593. | Lateral Epitaxial Overgrowth of GaN Thin Films on Sapphire and Silicon
Wide Bandgap Nitride Semiconductor Workshop
St. Louis, MO -- August 4, 1998
|
| 594. | Exploration of the Entire Spectrum of III-V Semiconductors for Opto-electronics
23rd International Summer College on Physics and Contemporary Needs
Bhurban, Pakistan -- June 26, 1998
|
| 595. | 21st Century: The Final Frontier for III-Nitride Materials and Devices
Future Trends in Microelectronics
Ile des Embiez, France -- May 31, 1998
|
| 596. | InAsSb(P)-based Interband Mi-Infrared (3-5 µm) Laser: Problems and Future Directions
CLEO Conference, “Semiconductor Laser Workshop"
San Francisco, CA -- May 8, 1998
|
| 597. | Low Threshold Aluminum Free GaInN/GaN Multi-Quantum Well Blue Lasers: Material growth, Characterization, Device Fabrication and Testing
Cornell University
Ithaca, NY -- March 10, 1998
|
| 598. | Quantum Cascade Lasers Grown by Gas-Source Molecular beam Epitaxy
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 599. | High Power InAsSb/InPAsSb/InAs Mid-Infrared Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
| 600. | Growth, Characterization and Device Fabrication of Mid-Infrared Type II Bipolar Lasers
Diode Laser Technology Review (DLTR)
Albuquerque, NM -- March 2, 1998
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu