| 601. | Narrow gap semiconductor photodiodes
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 602. | Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 603. | Electrical transport properties of highly doped N-type GaN epilayers
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 604. | Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
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| 605. | Multiple quantum well structures for multicolor infrared detectors
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 606. | GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 607. | Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications
SPIE Photonics West '98, Photodetectors: Materials and Devices III
San Jose, CA -- January 24, 1998
|
| 608. | 8.5 µm room-temperature quantum cascade lasers grown by gas-source molecular beam epitaxy
SPIE Photonics West '98, Integrated Optic Devices II
San Jose, CA -- January 24, 1998
|
| 609. | Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition
SPIE Photonics West '98, In-Plane Semiconductor Laser
San Jose, CA -- January 24, 1998
|
| 610. | Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
|
| 611. | New Developments in III-Nitride Material and Device Applications
9th International Workshop on Physics of Semiconductor Devices (IWPSD)
New Delhi, India -- December 16, 1997
|
| 612. | InP-based Multi-Spectral Quantum Well Infrared Photodetectors
International Semiconductor Device Research Symposium (ISDRS ‘97)
Charlottesville, VA -- December 11, 1997
|
| 613. | Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy
International Semiconductor Device Research Symposium (ISDRS ‘97)
Charlottesville, VA -- December 11, 1997
|
| 614. | Trends in Optoelectronics
Conference on Gallium Arsenide & Other Compound Semiconductors
San Diego, CA -- November 12, 1997
|
| 615. | Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical Communication and Processing Applications
SPIE Conference, Design and Manufacturing of WDM Devices
Dallas, TX -- November 4, 1997
|
| 616. | Sb-based Infrared Materials for Uncooled Photodetector Applications
192nd Meeting of the Electrochemical Society, Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays-Physcs and Applications
Paris, France -- August 31, 1997
|
| 617. | III-Nitrides Grown Using Trimethygallium and Triethylgallium
19th International Conference on Defects in Semiconductors (ICDS)
Aveiro, Portugal -- June 21, 1997
|
| 618. | High Power Midwave-Infrared InAsSb/InPAsSb Lasers for 3-5 µm
Diode Laser Technology Review Meeting
Albuquerque, NM -- June 9, 1997
|
| 619. | Microscopes: Tools for Probing Atomic Arrangements in Semiconductor Thin Films
Scanning Microscopy Meeting, Formation and Properties of Nanoscaled Structures Symposium
Chicago, IL -- May 12, 1997
|
| 620. | Exploration of entire range III-V semiconductor materials and devices
Department of Electrical Engineering
University of Notre Dame, IN -- April 22, 1997
|
| 621. | Quantum Well Infrared Photodetectors (QWIPs)
Electrical Engineering and Computer Science Department
University of Illinois at Chicago, IL -- April 3, 1997
|
| 622. | Heteroepitaxial AlGaN films for ultraviolet photodetector applications
III-Nitride Workshop
St. Louis, MO -- March 11, 1997
|
| 623. | MBE of InSb for focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 624. | Growth models of GaN thin films based on crystal chemistry
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 625. | InAsSb/InAsSbP high-power laser diodes emitting 3-5 µm range on InAs and GaSb substrates
SPIE Photonics West '97, Integrated Optics Devices: Potential and Commercialization Conference
San Jose, CA -- February 8, 1997
|
| 626. | Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for l = 808 and 980 nm
SPIE Photonics West '97, In-Plane Semiconductor Lasers
San Jose, CA -- February 8, 1997
|
| 627. | InSb growth on (111) and (100) GaAs and Si substrates for near room temperature focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 628. | InTlSb and InAsSb for 8-12 µm near room temperature operation
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 629. | Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 630. | AlGaN ultraviolet detectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 631. | Intrinsic AlGaN photoconductors for the entire compositional range
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 632. | Infrared Imaging Arrays Using Advanced III-V Materials
Advanced Workshop on Frontiers in Electronics (WOFE)
Canary Islands, Spain -- January 6, 1997
|
| 633. | High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 µm Range
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 634. | GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 µm Focal Plane Array Infrared Imaging
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 635. | Very Low Dislocation Densities in GaN-AlGaN Heterostructures,
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 636. | High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 637. | Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 638. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96)
Seoul, Korea -- October 21, 1996
|
| 639. | Sb-based Infrared FPA on GaAs and Si
DARPA/ETO Optoelectronics Program Review
Orlando, FL -- October 7, 1996
|
| 640. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
XII Conference on Solid State Crystals, Materials Science and Applications
Zakopane, Poland -- October 7, 1996
|
| 641. | III-V Interband and Intraband Far-Infrared Detectors
23rd International Symposium on Compound Semiconductors
St. Petersburg, Russia -- September 23, 1996
|
| 642. | GaAs-GaInP(As) p-type and n-type QWIPs
Air Force Office of Scientific Research Semiconductor and Electromagnetic Materials Review
Wright-Patterson AFB, OH -- August 22, 1996
|
| 643. | Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors
Air Force Wright Laboratory
Wright-Patterson AFB, OH -- June 17, 1996
|
| 644. | Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 µm Range
CLEO/QELS '96
Anaheim, CA -- June 2, 1996
|
| 645. | MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2
International Symposium on Nitrides
St. Malo, France -- May 29, 1996
|
| 646. | Development of III-Nitride Technology for Optoelectronic Devices
DARPA/ETO GaN Workshop
Reston, VA -- May 9, 1996
|
| 647. | MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers
IEEE 9th International Conference on Semiconducting and Insulating Materials
Toulouse, France -- April 29, 1996
|
| 648. | Wide Bandgap III-Nitride Semiconductors and Their Applications
Electrical Engineering Department, University of Minnesota
Minneapolis, MN -- March 28, 1996
|
| 649. | The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 650. | Semiconductor Ultraviolet Detectors
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu