| 651. | Exploration of entire range III-V semiconductor materials and devices
Department of Electrical Engineering
University of Notre Dame, IN -- April 22, 1997
|
| 652. | Quantum Well Infrared Photodetectors (QWIPs)
Electrical Engineering and Computer Science Department
University of Illinois at Chicago, IL -- April 3, 1997
|
| 653. | Heteroepitaxial AlGaN films for ultraviolet photodetector applications
III-Nitride Workshop
St. Louis, MO -- March 11, 1997
|
| 654. | MBE of InSb for focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 655. | Growth models of GaN thin films based on crystal chemistry
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 656. | InAsSb/InAsSbP high-power laser diodes emitting 3-5 µm range on InAs and GaSb substrates
SPIE Photonics West '97, Integrated Optics Devices: Potential and Commercialization Conference
San Jose, CA -- February 8, 1997
|
| 657. | Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for l = 808 and 980 nm
SPIE Photonics West '97, In-Plane Semiconductor Lasers
San Jose, CA -- February 8, 1997
|
| 658. | InSb growth on (111) and (100) GaAs and Si substrates for near room temperature focal plane arrays
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 659. | InTlSb and InAsSb for 8-12 µm near room temperature operation
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 660. | Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 661. | AlGaN ultraviolet detectors
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 662. | Intrinsic AlGaN photoconductors for the entire compositional range
SPIE Photonics West '97, Photodetectors: Materials and Devices II
San Jose, CA -- February 8, 1997
|
| 663. | Infrared Imaging Arrays Using Advanced III-V Materials
Advanced Workshop on Frontiers in Electronics (WOFE)
Canary Islands, Spain -- January 6, 1997
|
| 664. | High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 µm Range
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 665. | GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 µm Focal Plane Array Infrared Imaging
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 666. | Very Low Dislocation Densities in GaN-AlGaN Heterostructures,
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 667. | High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 668. | Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 669. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96)
Seoul, Korea -- October 21, 1996
|
| 670. | Sb-based Infrared FPA on GaAs and Si
DARPA/ETO Optoelectronics Program Review
Orlando, FL -- October 7, 1996
|
| 671. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
XII Conference on Solid State Crystals, Materials Science and Applications
Zakopane, Poland -- October 7, 1996
|
| 672. | III-V Interband and Intraband Far-Infrared Detectors
23rd International Symposium on Compound Semiconductors
St. Petersburg, Russia -- September 23, 1996
|
| 673. | GaAs-GaInP(As) p-type and n-type QWIPs
Air Force Office of Scientific Research Semiconductor and Electromagnetic Materials Review
Wright-Patterson AFB, OH -- August 22, 1996
|
| 674. | Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors
Air Force Wright Laboratory
Wright-Patterson AFB, OH -- June 17, 1996
|
| 675. | Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 µm Range
CLEO/QELS '96
Anaheim, CA -- June 2, 1996
|
| 676. | MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2
International Symposium on Nitrides
St. Malo, France -- May 29, 1996
|
| 677. | Development of III-Nitride Technology for Optoelectronic Devices
DARPA/ETO GaN Workshop
Reston, VA -- May 9, 1996
|
| 678. | MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers
IEEE 9th International Conference on Semiconducting and Insulating Materials
Toulouse, France -- April 29, 1996
|
| 679. | Wide Bandgap III-Nitride Semiconductors and Their Applications
Electrical Engineering Department, University of Minnesota
Minneapolis, MN -- March 28, 1996
|
| 680. | The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 681. | Semiconductor Ultraviolet Detectors
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 682. | Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 µm Range
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 683. | UV Photodetectors Based on AlGaN Grown by MOCVD
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 684. | GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 685. | Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 686. | Photoconductivity in N-type GaN
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 687. | Spectral Response of GaN p-n-Junction Photovoltaic Structure
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 688. | Characterization of InGaP Regrown on Patterned Wafers by MBE
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 689. | Growth of GaN Without Yellow Luminescence
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 690. | MOCVD Growth of Quantum Devices
Heterostructure Epitaxy and Devices (HEAD '95)
Smolenice, Slovakia -- October 15, 1995
|
| 691. | Background Limited Performance in p-doped GaAs/GaInAsP QWIPs
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 692. | Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 693. | Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 694. | High Power Semiconductor Diode Lasers
Center for Nonlinear Optical Materials (CNOM) Annual Affiliates Meeting
Stanford University -- September 19, 1995
|
| 695. | Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays
International Symposium on Compound Semiconductors (ISCS-22)
Cheju Island, Korea -- August 29, 1995
|
| 696. | (Ga, In)(As, P) Superlattices for Optoelectronic Applications
8th International Conference on Superlattices, Microstructures, Microdevices (ICSMM-8)
Cincinnati, OH -- August 20, 1995
|
| 697. | III-Nitride Semiconductor Materials for Future Optoelectronics
Physics of Semiconducting Compounds
Jaszowiec, Poland -- May 29, 1995
|
| 698. | High Power Laser Diodes
International Symposium on Low Dimensional Structures and Devices (LDSD '95)
Singapore -- May 8, 1995
|
| 699. | Future Semiconductor Materials for Optoelectronics
International Symposium on Heterostructures in Science and Technology
Wurzburg, Germany -- March 13, 1995
|
| 700. | Theoretical investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu