| 651. | Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 µm Range
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
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| 652. | UV Photodetectors Based on AlGaN Grown by MOCVD
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 653. | GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
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| 654. | Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
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| 655. | Photoconductivity in N-type GaN
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 656. | Spectral Response of GaN p-n-Junction Photovoltaic Structure
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 657. | Characterization of InGaP Regrown on Patterned Wafers by MBE
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
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| 658. | Growth of GaN Without Yellow Luminescence
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
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| 659. | MOCVD Growth of Quantum Devices
Heterostructure Epitaxy and Devices (HEAD '95)
Smolenice, Slovakia -- October 15, 1995
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| 660. | Background Limited Performance in p-doped GaAs/GaInAsP QWIPs
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
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| 661. | Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 662. | Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 663. | High Power Semiconductor Diode Lasers
Center for Nonlinear Optical Materials (CNOM) Annual Affiliates Meeting
Stanford University -- September 19, 1995
|
| 664. | Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays
International Symposium on Compound Semiconductors (ISCS-22)
Cheju Island, Korea -- August 29, 1995
|
| 665. | (Ga, In)(As, P) Superlattices for Optoelectronic Applications
8th International Conference on Superlattices, Microstructures, Microdevices (ICSMM-8)
Cincinnati, OH -- August 20, 1995
|
| 666. | III-Nitride Semiconductor Materials for Future Optoelectronics
Physics of Semiconducting Compounds
Jaszowiec, Poland -- May 29, 1995
|
| 667. | High Power Laser Diodes
International Symposium on Low Dimensional Structures and Devices (LDSD '95)
Singapore -- May 8, 1995
|
| 668. | Future Semiconductor Materials for Optoelectronics
International Symposium on Heterostructures in Science and Technology
Wurzburg, Germany -- March 13, 1995
|
| 669. | Theoretical investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
|
| 670. | Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
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| 671. | Exploration in the Whole Spectrum of III-V Semiconductors for Optoelectronic Device Applications
Department of Electrical and Computer Engineering, University of California at Davis
Davis, CA -- October 28, 1994
|
| 672. | Exploration in the Whole Spectrum of III-V Semiconductors
1st International Conference on Materials for Microelectronic
Barcelona, Spain -- October 17, 1994
|
| 673. | Development of InTlSb Infrared Photodetectors Grown by LP-MOCVD
The Electrochemical Society Meeting on 2-20µm Wavelength Infrared Detectors: Physics and Applications
Miami Beach, FL -- October 11, 1994
|
| 674. | Peculiarities of Operation Characteristics of High-Power InGaAsP/GaAs 0.8 µm Laser Diodes
IEEE 14th International Semiconductor Laser Conference
Maui, Hawaii -- September 19, 1994
|
| 675. | Novel Devices
Advanced Research Projects Agency/Microelectronics Technology Office (DARPA/MTO) Program Reviews
Alexandria, VA -- June 9, 1994
|
| 676. | InGaAsP/GaAs High-Power Lasers for Nd:YAG Pumping
Conference on Lasers and Electro-Optics (CLEO '94)
Anaheim, CA -- May 8, 1994
|
| 677. | Physics and Applications of Advanced Semiconductor Technology and Future Trends
Physics Department, University of Western Ontario
London, Canada -- March 9, 1994
|
| 678. | GaN Based Materials for Blue Lasers
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD '94)
San Francisco, CA -- February 20, 1994
|
| 679. | InGaAsP/GaAs diode lasers for Nd:YAG pumping
SPIE Conference OE/LASE '94
Los Angeles, CA -- January 24, 1994
|
| 680. | Growth of III-V Nitrides
National Research Council, Committee on Materials for High-Temperature Semiconductor Devices
Washington, DC -- December 14, 1993
|
| 681. | Optoelectronic Research at Northwestern and Industry Relations
Italian Trade Commission and Northwestern's International Business Development Program
Chicago, IL -- December 9, 1993
|
| 682. | Optoelectronic Materials and Devices
University of Arizona
Tucson, AZ -- November 18, 1993
|
| 683. | Materials for Bloch Oscillations Devices
Army Research Office, Bloch Oscillations Workshop
Research Triangle Park, NC -- September 13, 1993
|
| 684. | GaN via MOCVD
Office of Naval Research, Electronic/Optical Materials Program review
Arlington, VA -- June 14, 1993
|
| 685. | Thermal Stability of GaN Thin Films Grown by MOCVD on 6H-SiC and Sapphire Substrates
U.S. Naval Research Laboratory, Tri-Service SIC Workshop
Washington, DC -- May 13, 1993
|
| 686. | Next Generation Semiconductor Materials for High Performance Optoelectronic Devices
Institute of Electrical and Electronic Engineers (IEEE), Motorola, Inc., IEEE Electron Devices Society Chapter Meeting
Schaumburg, IL -- May 5, 1993
|
| 687. | Optoelectronic Material
Consultate General of France, University of Michigan-Ann Arbor, National Science Foundation, and U.S. Air Force Office of Scientific Research, French and American Midwestern Symposium
Ann Arbor, MI -- April 28, 1993
|
| 688. | InGaAsP Diodes
U.S. Air Force Phillips Laboratory, Diode Laser Technology Program Conference
Albuquerque, NM -- April 20, 1993
|
| 689. | Semiconductor Materials and Their Applications
School of Electrical Engineering, Cornell University
Ithaca, NY -- March 30, 1993
|
| 690. | Current and Future Objectives of the Center for Quantum Devices
Department of Physics and Astronomy, Northwestern University
Evanston, IL -- February 10, 1993
|
| 691. | SPIE Federation of Optics College and University Students: Materials and Light
Plenary Speaker
Northwestern University -- November 30, 1999
|
| 692. | Invited Talk
OSA Traveling Lecturer Program
Columbia University, Ney York -- November 30, 1999
|
| 693. | Plenary Talk
OSA Distinguishe lecture
Columbia University, Ney York -- November 30, 1999
|
| 694. | The power of materials innovation: Breaking Spectral and Performance Barriers for Quantum Devices
SPIE Photonics West
San Francisco, CA -- November 30, 1999
[Conference Link]
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| 695. | Manijeh Razeghi - Invited Speaker
SPIE Photonics West 2023
San Francisco, CA -- November 30, 1999
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu