| 651. | GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 µm Focal Plane Array Infrared Imaging
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 652. | Very Low Dislocation Densities in GaN-AlGaN Heterostructures,
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 653. | High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 654. | Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays
Materials Research Society Fall Meeting
Boston, MA -- December 2, 1996
|
| 655. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
8th Seoul International Symposium on the Physics of Semiconductors and Applications (ISPSA-96)
Seoul, Korea -- October 21, 1996
|
| 656. | Sb-based Infrared FPA on GaAs and Si
DARPA/ETO Optoelectronics Program Review
Orlando, FL -- October 7, 1996
|
| 657. | Recent Advances in III-Nitride Materials, Characterization and Device Applications
XII Conference on Solid State Crystals, Materials Science and Applications
Zakopane, Poland -- October 7, 1996
|
| 658. | III-V Interband and Intraband Far-Infrared Detectors
23rd International Symposium on Compound Semiconductors
St. Petersburg, Russia -- September 23, 1996
|
| 659. | GaAs-GaInP(As) p-type and n-type QWIPs
Air Force Office of Scientific Research Semiconductor and Electromagnetic Materials Review
Wright-Patterson AFB, OH -- August 22, 1996
|
| 660. | Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors
Air Force Wright Laboratory
Wright-Patterson AFB, OH -- June 17, 1996
|
| 661. | Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 µm Range
CLEO/QELS '96
Anaheim, CA -- June 2, 1996
|
| 662. | MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density Less than 10^7 cm^-2
International Symposium on Nitrides
St. Malo, France -- May 29, 1996
|
| 663. | Development of III-Nitride Technology for Optoelectronic Devices
DARPA/ETO GaN Workshop
Reston, VA -- May 9, 1996
|
| 664. | MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers
IEEE 9th International Conference on Semiconducting and Insulating Materials
Toulouse, France -- April 29, 1996
|
| 665. | Wide Bandgap III-Nitride Semiconductors and Their Applications
Electrical Engineering Department, University of Minnesota
Minneapolis, MN -- March 28, 1996
|
| 666. | The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 667. | Semiconductor Ultraviolet Detectors
SPIE Photonics West '96, "WDM Components"
San Jose, CA -- January 27, 1996
|
| 668. | Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 µm Range
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 669. | UV Photodetectors Based on AlGaN Grown by MOCVD
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 670. | GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 671. | Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors
SPIE Photonics West '96
San Jose, CA -- January 27, 1996
|
| 672. | Photoconductivity in N-type GaN
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 673. | Spectral Response of GaN p-n-Junction Photovoltaic Structure
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 674. | Characterization of InGaP Regrown on Patterned Wafers by MBE
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 675. | Growth of GaN Without Yellow Luminescence
Materials Research Society Fall Meeting
Boston, MA -- November 27, 1995
|
| 676. | MOCVD Growth of Quantum Devices
Heterostructure Epitaxy and Devices (HEAD '95)
Smolenice, Slovakia -- October 15, 1995
|
| 677. | Background Limited Performance in p-doped GaAs/GaInAsP QWIPs
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 678. | Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 679. | Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors
188th Meeting of the Electrochemical Society
Chicago, IL -- October 8, 1995
|
| 680. | High Power Semiconductor Diode Lasers
Center for Nonlinear Optical Materials (CNOM) Annual Affiliates Meeting
Stanford University -- September 19, 1995
|
| 681. | Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays
International Symposium on Compound Semiconductors (ISCS-22)
Cheju Island, Korea -- August 29, 1995
|
| 682. | (Ga, In)(As, P) Superlattices for Optoelectronic Applications
8th International Conference on Superlattices, Microstructures, Microdevices (ICSMM-8)
Cincinnati, OH -- August 20, 1995
|
| 683. | III-Nitride Semiconductor Materials for Future Optoelectronics
Physics of Semiconducting Compounds
Jaszowiec, Poland -- May 29, 1995
|
| 684. | High Power Laser Diodes
International Symposium on Low Dimensional Structures and Devices (LDSD '95)
Singapore -- May 8, 1995
|
| 685. | Future Semiconductor Materials for Optoelectronics
International Symposium on Heterostructures in Science and Technology
Wurzburg, Germany -- March 13, 1995
|
| 686. | Theoretical investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power Lasers
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
|
| 687. | Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation
Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting
Boston, MA -- November 1, 1994
|
| 688. | Exploration in the Whole Spectrum of III-V Semiconductors for Optoelectronic Device Applications
Department of Electrical and Computer Engineering, University of California at Davis
Davis, CA -- October 28, 1994
|
| 689. | Exploration in the Whole Spectrum of III-V Semiconductors
1st International Conference on Materials for Microelectronic
Barcelona, Spain -- October 17, 1994
|
| 690. | Development of InTlSb Infrared Photodetectors Grown by LP-MOCVD
The Electrochemical Society Meeting on 2-20µm Wavelength Infrared Detectors: Physics and Applications
Miami Beach, FL -- October 11, 1994
|
| 691. | Peculiarities of Operation Characteristics of High-Power InGaAsP/GaAs 0.8 µm Laser Diodes
IEEE 14th International Semiconductor Laser Conference
Maui, Hawaii -- September 19, 1994
|
| 692. | Novel Devices
Advanced Research Projects Agency/Microelectronics Technology Office (DARPA/MTO) Program Reviews
Alexandria, VA -- June 9, 1994
|
| 693. | InGaAsP/GaAs High-Power Lasers for Nd:YAG Pumping
Conference on Lasers and Electro-Optics (CLEO '94)
Anaheim, CA -- May 8, 1994
|
| 694. | Physics and Applications of Advanced Semiconductor Technology and Future Trends
Physics Department, University of Western Ontario
London, Canada -- March 9, 1994
|
| 695. | GaN Based Materials for Blue Lasers
Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD '94)
San Francisco, CA -- February 20, 1994
|
| 696. | InGaAsP/GaAs diode lasers for Nd:YAG pumping
SPIE Conference OE/LASE '94
Los Angeles, CA -- January 24, 1994
|
| 697. | Growth of III-V Nitrides
National Research Council, Committee on Materials for High-Temperature Semiconductor Devices
Washington, DC -- December 14, 1993
|
| 698. | Optoelectronic Research at Northwestern and Industry Relations
Italian Trade Commission and Northwestern's International Business Development Program
Chicago, IL -- December 9, 1993
|
| 699. | Optoelectronic Materials and Devices
University of Arizona
Tucson, AZ -- November 18, 1993
|
| 700. | Materials for Bloch Oscillations Devices
Army Research Office, Bloch Oscillations Workshop
Research Triangle Park, NC -- September 13, 1993
|
Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, ILÂ 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu