251. | Room temperature stable and narrow THz emission from quantum cascade lasers based on intracavity difference frequency generation 15th International Conference on Narrow Gap System (NGS15) Blacksburg, VA -- August 1, 2011 |
252. | Invited Talk, "Recent Advanced in IR Semiconductor Laser Diodes and Future Trends," Session on "Progress in Semiconductor Sources" IEEE Photonics Society Summer Topical Meeting Series Montreal, Canada -- July 18, 2011 [Conference Link] |
253. | Invited Talk, "Recent Quantum Cascade Laser Accomplishments and New Research Directions" Technical Interchange Meeting (TIM) U.S. Naval Research Laboratory, Washington, DC -- June 1, 2011 |
254. | Invited Talk, "Overview of Activity at the Center for Quantum Devices (CQD) especially Toward Realizing High Power Semiconductor Terahertz Laser Source at Room Temperature for Sensing and Telecommunication" Samsung Telecommunications America Inc. Richardson, TX -- May 27, 2011 |
255. | Invited Talk, High-operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice SPIE Defense, Security and Sensing Syposium, conference on Infrared Technology and Applications XXXVII Orlando, FL -- April 28, 2011 |
256. | Invited Talk, Recent advances in high-performance antimonide-based superlattice FPAs SPIE Defense, Security and Sensing Syposium, conference on Infrared Technology and Applications XXXVII Orlando, FL -- April 26, 2011 |
257. | Keynote Talk, Toward realizing high power semiconductor terahertz lasers sources at room temperature SPIE Defense, Security and Sensing Syposium, conference on Terahertz Physics, Devices and Systems V Orlando, FL -- April 25, 2011 |
258. | Invited Talk: Widely tunable, single mode, high power quantum cascade lasers Integrated Photonics: Materials, Devices and Applications Conference at SPIE 5th International Symposium on Microtechnologies for the New Millennium Prague, Czech Republic -- April 19, 2011 |
259. | Distinguished Speaker, "Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up" Centenary Celebrations of the Electrical and Computer Engineering Department at the University of Dayton Dayton, OH -- April 8, 2011 |
260. | III-nitride resonant tunneling devices from growth to fabrication SPIE Photonics West Symposium San Francisco, CA -- January 26, 2011 |
261. | High power 1D and 2D photonic crystal distributed feedback quantum casacde laser SPIE Photonics West Symposium San Francisco, CA -- January 26, 2011 |
262. | Use of PLD-grown ZnO thin films and Nanostructures .... SPIE Photonics West Symposium San Francisco, CA -- January 26, 2011 |
263. | Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3" GaSb wafer Conference on "Quantum Sensing and Nanophotonic Devices VIII," SPIE Photonics West Symposium San Francisco, CA -- January 25, 2011 |
264. | Development of a sacrificial ZnO/c-Al(2)O(3) template approach to enable... SPIE Photonics West Symposium San Francisco, CA -- January 25, 2011 |
265. | Advances in UV sensitive visible blind GaN-based APDs SPIE Photonics West Symposium San Francisco, CA -- January 25, 2011 |
266. | High peak power (34 W) photonic crystal distributed feedback quantum cascade lasers Conference on "Photonic and Phononic Properties of Engineered Nanostructures," SPIE Photonics West Symposium San Francisco, CA -- January 24, 2011 |
267. | Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes Conference on "Quantum Sensing and Nanophotonic Devices VIII," SPIE Photonics West Symposium San Francisco, CA -- January 24, 2011 |
268. | III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices IEEE Photonics Society Annual Meeting - Integrated Optics, Optoelectronics and Interconnect (IOOI) Conference Denver, CO -- November 10, 2010 |
269. | Penary Talk, Mastering power and efficiency of mid-infrared semiconductor lasers European Semiconductor Laser Workshop (ESLW) Pavia, Italy -- September 24, 2010 |
270. | Plenary Talk, State-of-art mid-infrared quantum cascade lasers 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X) Shanghai, China -- September 5, 2010 |
271. | Plenary Talk, Revolutionary development of infrared optoelectronics 10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X) Shanghai, China -- September 5, 2010 |
272. | Plenary Talk, Quantum optoelectronic devices from UV to THz at CQD: Recent advances and future trends International Union of Materials Research Society-International Conference on Electronic Materials (IUMRS-ICEM) Kintex, Seoul, Korea -- August 22, 2010 |
273. | Comparison of APDs grown on c- and m-plane substrates SPIE Optics and Photonics Symposium San Diego, CA -- August 5, 2010 |
274. | III-nitride based avalanche photo detectors SPIE Optics and Photonics Symposium San Diego, CA -- August 4, 2010 |
275. | Plenary Talk, Revolutionary development of infrared optoelectronics 1st International DNTAC Symposium on Nano Technology Seoul, Korea -- July 14, 2010 |
276. | Plenary Talk: State-of-art mid-infrared quantum cascade lasers SPIE Defense and Security Symposium (DSS) Orlando, FL -- April 5, 2010 |
277. | Novel Green Light Emitting Diodes: Innovative Droop-free Lighting Solutions for a Sustainable Earth 4th International Conference on LED and Solid State Lighting (LED 2010) COEX, Seoul, Korea -- February 3, 2010 |
278. | Current status and potential of high power mid-infrared intersubband lasers SPIE International Photonics West Symposium San Francisco, CA -- January 25, 2010 |
279. | High performance quantum dot and quantum well infrared focala plane arrays SPIE International Photonics West Symposium San Francisco, CA -- January 24, 2010 |
280. | Watt level performance of photonic crystal distributed feedback quantum cascade laser SPIE International Photonics West Symposium San Francisco, CA -- January 23, 2010 |
281. | Type-II InAs/GaSb Superlattices: A Developing Material System vs. Mercury Cadmium Telluride - The State-of-the-Art Infrared Detection Technology DRS RSTA Inc. - Infrared Technologies Division Dallas, TX -- December 14, 2009 |
282. | Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up IEEE Boston Photonics Society MIT LIncoln Labs, Lexington, MA -- December 10, 2009 |
283. | Type II InAs/GaSb superlattices: A developing material system vs. Mercury Cadium Telluride; the state-of-the-art infrared detection technology National Research Council Committee on the Developments in Detector Technoloiges, The National Academies Washington, DC -- December 8, 2009 |
284. | Recent advances in quantum cascade lasers at the Center for Quantum Devices International Workshop on Terahertz and Mid Infrared Radiation (TERA-MIR): Basic Research and Applications Turunc-Marmaris, Turkey -- November 3, 2009 |
285. | Hybrid Green LEDs with n-type ZnO Substituted for n-type GaN in an Inverted p-n Junction IEEE LEOS Photonics Annual Meeting Belek-Antalya, Turkey -- October 7, 2009 |
286. | High power, high WPE, CW, RT operation of quantum cascade lasers: Recent results and future trends IEEE LEOS Photonics Annual Meeting Belek-Antalya, Turkey -- October 6, 2009 |
287. | State of the art Type II superlattices in infrared detection and imaging IEEE LEOS Photonics Annual Meeting Belek-Antalya, Turkey -- October 4, 2009 |
288. | State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging SPIE Optics and Photonics Symposium San Diego, CA -- August 4, 2009 |
289. | State of the art of Type II superlattices in infrared detection and imaging International Conference on Narrow Gap Semiconductors and Systems (NGS-2) Sendai, Japan -- July 13, 2009 |
290. | Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging International Symposium on Photoelectronic Detection and Imaging Beijing, China -- June 17, 2009 |
291. | Plenary Talk - III-Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes, Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices AFOSR Joint Electronics Program Review Arlington, VA -- May 27, 2009 |
292. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays SPIE International Symposium on Microtechnologies for the New Millennium Dresden, Germany -- May 6, 2009 |
293. | Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications SPIE International Symposium on Microtechnologies for the New Millennium Dresden, Germany -- May 5, 2009 |
294. | Background limited performance of long wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference Orlando, FL -- April 14, 2009 |
295. | High performance antimony base Type-II superlattice photodiodes on GaAs substrate SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference Orlando, FL -- April 14, 2009 |
296. | Modern Optoelectronics: Building Better Materials from the Atoms Up Invited Colloquium Speaker, Physics Department, Texas Tech University Lubbock, TX -- March 6, 2009 |
297. | III-Nitride avalanche photodiodes SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |
298. | Mid-infrared quantum cascade lasers with high wall plug efficiency SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |
299. | Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |
300. | GaN-based nanostructured photodetectors SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI San Jose, CA -- January 26, 2009 |