Conferences by    
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301.   Current status and potential of high power mid-infrared intersubband lasers
SPIE International Photonics West Symposium
San Francisco, CA -- January 25, 2010
 
302.   High performance quantum dot and quantum well infrared focala plane arrays
SPIE International Photonics West Symposium
San Francisco, CA -- January 24, 2010
 
303.   Watt level performance of photonic crystal distributed feedback quantum cascade laser
SPIE International Photonics West Symposium
San Francisco, CA -- January 23, 2010
 
304.   Type-II InAs/GaSb Superlattices: A Developing Material System vs. Mercury Cadmium Telluride - The State-of-the-Art Infrared Detection Technology
DRS RSTA Inc. - Infrared Technologies Division
Dallas, TX -- December 14, 2009
 
305.   Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up
IEEE Boston Photonics Society
MIT LIncoln Labs, Lexington, MA -- December 10, 2009
 
306.   Type II InAs/GaSb superlattices: A developing material system vs. Mercury Cadium Telluride; the state-of-the-art infrared detection technology
National Research Council Committee on the Developments in Detector Technoloiges, The National Academies
Washington, DC -- December 8, 2009
 
307.   Recent advances in quantum cascade lasers at the Center for Quantum Devices
International Workshop on Terahertz and Mid Infrared Radiation (TERA-MIR): Basic Research and Applications
Turunc-Marmaris, Turkey -- November 3, 2009
 
308.   Hybrid Green LEDs with n-type ZnO Substituted for n-type GaN in an Inverted p-n Junction
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 7, 2009
 
309.   High power, high WPE, CW, RT operation of quantum cascade lasers: Recent results and future trends
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 6, 2009
 
310.   State of the art Type II superlattices in infrared detection and imaging
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 4, 2009
 
311.   State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging
SPIE Optics and Photonics Symposium
San Diego, CA -- August 4, 2009
 
312.   State of the art of Type II superlattices in infrared detection and imaging
International Conference on Narrow Gap Semiconductors and Systems (NGS-2)
Sendai, Japan -- July 13, 2009
 
313.   Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
International Symposium on Photoelectronic Detection and Imaging
Beijing, China -- June 17, 2009
 
314.   Plenary Talk - III-Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes, Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices
AFOSR Joint Electronics Program Review
Arlington, VA -- May 27, 2009
 
315.   Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 6, 2009
 
316.   Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 5, 2009
 
317.   Background limited performance of long wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
 
318.   High performance antimony base Type-II superlattice photodiodes on GaAs substrate
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
 
319.   Modern Optoelectronics: Building Better Materials from the Atoms Up
Invited Colloquium Speaker, Physics Department, Texas Tech University
Lubbock, TX -- March 6, 2009
 
320.   III-Nitride avalanche photodiodes
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
321.   Mid-infrared quantum cascade lasers with high wall plug efficiency
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
322.   Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
323.   GaN-based nanostructured photodetectors
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
324.   The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
325.   Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
326.   Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
 
327.   Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
SPIE Photonics West Symposium, Zinc Oxide Materials and Devices IV
San Jose, CA -- January 25, 2009
 
328.   Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE Photonics West Symposium, Quantum Dots, Particles and Nanoclusters VI
San Jose, CA -- January 25, 2009
 
329.   High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system
SPIE Photonics West Symposium, Novel In-Plane Semiconductor Lasers VIII
San Jose, CA -- January 25, 2009
 
330.   High performance type-II InAs/GaSb superlattice photodiodes for infrared detection and imaging
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 20, 2009
 
331.   Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 19, 2009
 
332.   Modern Atomic Engineering: Inspiration from Nature
Distinguished Speaker, EECS Department, Northwestern University
Evanston, IL -- December 3, 2008
[Conference Link]
 
333.   High performance type-II InAs/GaSb superlattices photodetectors and focal plane arrays
26th Army Conference
Orlando, FL -- December 1, 2008
 
334.   High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane arrays
U.S. Workshop on the Physics and Chemistry of II-VI Materials
Las Vegas, NV -- November 11, 2008
 
335.   Building a Better Infrared Laser with Band Structure Engineering
Invited Seminar, Department of Physics and Optical Science
University of North Carolina at Charlotte -- October 17, 2008
 
336.   Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
NRO, Invited Seminar
Chantilly, VA -- October 7, 2008
 
337.   Heterogeneous Monolithic Integration of III-V Semiconductors on GaAs and Si Substrates for Large Format Infrared Focal Plane Array Development
DARPA Common Platform Composite Wafer Technology: IR Materials Workshop
Chicago, IL -- October 6, 2008
 
338.   High Performance QC Lasers: Latest Achievements and Future Trends
International Quantum Cascade Lasers School and Workshop (IQCLSW)
Monte Verita, Switzerland -- September 14, 2008
 
339.   Very High Performance LWIR Type-II InAs/GaSb Superlattice Photodiodes with M-Structure
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
 
340.   Development of Material Quality and Structural Design for High Performance Type II InAs/GaSb Superlattice Photodiodes
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
 
341.   III-Nitride Based UV Single Photon Detection (APDs)
2nd International Symposium on Growth of III-Nitrides (ISGN-2)
Laforet Shuzenji Izu, Japan -- July 6, 2008
 
342.   Type II InAs/GaSb Superlattices: A Promising Material System for Infrared
2008 Euro American Workshop on Information Optics
Annecy, France -- June 1, 2008
 
343.   Plenary Talk, New Frontiers in InP Based Quantum Devices
20th International Conference on Indium Phosphide and Related Materials (IPRM) 2008
Versailles, France -- May 25, 2008
 
344.   Quantum Dots or Artificial Atoms: Solution for High Performance IR Thermal Imaging
Particles 2008 Conference
Orlando, FL -- May 10, 2008
 
345.   UV laser diodes based on AlGaN nanostructures
2008 AFRL-AFOSR Nanotechnology Initiative Review
Fairborn, OH -- May 6, 2008
 
346.   Keynote Speaker, A Strong History of US-Korea Collaborations with the Center for Quantum Devices
US-AFOSR/South Korea-MOST Nanoscience Meeting
Arlington, VA -- April 25, 2008
 
347.   Modeling, Material Growth and Processing, Detector and FPA Fabrication and Characterization and Comparison of Type-II Superlattice and HgCdTe Performance and Cost
Type-II Strained Layer Superlattice (T2SL) IRFPA Workshop
Arlington, VA -- April 8, 2008
 
348.   Atomic Control of Materials: Building Bloc for High Performance Quantum Devices
Workshop on Recent Advances of Low Dimensional Structures and Devices
Nottingham, England -- April 7, 2008
 
349.   New optoelectronic components based on quantum structures
EOS Topical Meeting
Utrecht, Netherlands -- March 31, 2008
 
350.   Electrically pumped photonic crystal distributed feedback quantum cascade lasers
MRS Symposium on Materials and Devices for Laser Remote Sensing & Optical Communication
San Francisco, CA -- March 24, 2008
 

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