| 301. | Plenary Talk, State-of-art mid-infrared quantum cascade lasers
10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X)
Shanghai, China -- September 5, 2010
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| 302. | Plenary Talk, Revolutionary development of infrared optoelectronics
10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X)
Shanghai, China -- September 5, 2010
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| 303. | Plenary Talk, Quantum optoelectronic devices from UV to THz at CQD: Recent advances and future trends
International Union of Materials Research Society-International Conference on Electronic Materials (IUMRS-ICEM)
Kintex, Seoul, Korea -- August 22, 2010
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| 304. | Comparison of APDs grown on c- and m-plane substrates
SPIE Optics and Photonics Symposium
San Diego, CA -- August 5, 2010
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| 305. | III-nitride based avalanche photo detectors
SPIE Optics and Photonics Symposium
San Diego, CA -- August 4, 2010
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| 306. | Plenary Talk, Revolutionary development of infrared optoelectronics
1st International DNTAC Symposium on Nano Technology
Seoul, Korea -- July 14, 2010
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| 307. | Plenary Talk: State-of-art mid-infrared quantum cascade lasers
SPIE Defense and Security Symposium (DSS)
Orlando, FL -- April 5, 2010
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| 308. | Novel Green Light Emitting Diodes: Innovative Droop-free Lighting Solutions for a Sustainable Earth
4th International Conference on LED and Solid State Lighting (LED 2010)
COEX, Seoul, Korea -- February 3, 2010
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| 309. | Current status and potential of high power mid-infrared intersubband lasers
SPIE International Photonics West Symposium
San Francisco, CA -- January 25, 2010
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| 310. | High performance quantum dot and quantum well infrared focala plane arrays
SPIE International Photonics West Symposium
San Francisco, CA -- January 24, 2010
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| 311. | Watt level performance of photonic crystal distributed feedback quantum cascade laser
SPIE International Photonics West Symposium
San Francisco, CA -- January 23, 2010
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| 312. | Type-II InAs/GaSb Superlattices: A Developing Material System vs. Mercury Cadmium Telluride - The State-of-the-Art Infrared Detection Technology
DRS RSTA Inc. - Infrared Technologies Division
Dallas, TX -- December 14, 2009
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| 313. | Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up
IEEE Boston Photonics Society
MIT LIncoln Labs, Lexington, MA -- December 10, 2009
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| 314. | Type II InAs/GaSb superlattices: A developing material system vs. Mercury Cadium Telluride; the state-of-the-art infrared detection technology
National Research Council Committee on the Developments in Detector Technoloiges, The National Academies
Washington, DC -- December 8, 2009
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| 315. | Recent advances in quantum cascade lasers at the Center for Quantum Devices
International Workshop on Terahertz and Mid Infrared Radiation (TERA-MIR): Basic Research and Applications
Turunc-Marmaris, Turkey -- November 3, 2009
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| 316. | Hybrid Green LEDs with n-type ZnO Substituted for n-type GaN in an Inverted p-n Junction
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 7, 2009
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| 317. | High power, high WPE, CW, RT operation of quantum cascade lasers: Recent results and future trends
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 6, 2009
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| 318. | State of the art Type II superlattices in infrared detection and imaging
IEEE LEOS Photonics Annual Meeting
Belek-Antalya, Turkey -- October 4, 2009
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| 319. | State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging
SPIE Optics and Photonics Symposium
San Diego, CA -- August 4, 2009
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| 320. | State of the art of Type II superlattices in infrared detection and imaging
International Conference on Narrow Gap Semiconductors and Systems (NGS-2)
Sendai, Japan -- July 13, 2009
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| 321. | Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
International Symposium on Photoelectronic Detection and Imaging
Beijing, China -- June 17, 2009
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| 322. | Plenary Talk - III-Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes, Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices
AFOSR Joint Electronics Program Review
Arlington, VA -- May 27, 2009
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| 323. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 6, 2009
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| 324. | Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications
SPIE International Symposium on Microtechnologies for the New Millennium
Dresden, Germany -- May 5, 2009
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| 325. | Background limited performance of long wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
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| 326. | High performance antimony base Type-II superlattice photodiodes on GaAs substrate
SPIE Defense and Security Symposium, Infrared Technology and Applications XXXV Conference
Orlando, FL -- April 14, 2009
|
| 327. | Modern Optoelectronics: Building Better Materials from the Atoms Up
Invited Colloquium Speaker, Physics Department, Texas Tech University
Lubbock, TX -- March 6, 2009
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| 328. | III-Nitride avalanche photodiodes
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 329. | Mid-infrared quantum cascade lasers with high wall plug efficiency
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 330. | Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 331. | GaN-based nanostructured photodetectors
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 332. | The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 333. | Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 334. | Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays
SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices VI
San Jose, CA -- January 26, 2009
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| 335. | Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
SPIE Photonics West Symposium, Zinc Oxide Materials and Devices IV
San Jose, CA -- January 25, 2009
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| 336. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
SPIE Photonics West Symposium, Quantum Dots, Particles and Nanoclusters VI
San Jose, CA -- January 25, 2009
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| 337. | High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system
SPIE Photonics West Symposium, Novel In-Plane Semiconductor Lasers VIII
San Jose, CA -- January 25, 2009
|
| 338. | High performance type-II InAs/GaSb superlattice photodiodes for infrared detection and imaging
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 20, 2009
|
| 339. | Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays
Quantum Structure Infrared Photodetector (QSIP)
Yosemite, CA -- January 19, 2009
|
| 340. | Modern Atomic Engineering: Inspiration from Nature
Distinguished Speaker, EECS Department, Northwestern University
Evanston, IL -- December 3, 2008
[Conference Link]
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| 341. | High performance type-II InAs/GaSb superlattices photodetectors and focal plane arrays
26th Army Conference
Orlando, FL -- December 1, 2008
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| 342. | High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane arrays
U.S. Workshop on the Physics and Chemistry of II-VI Materials
Las Vegas, NV -- November 11, 2008
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| 343. | Building a Better Infrared Laser with Band Structure Engineering
Invited Seminar, Department of Physics and Optical Science
University of North Carolina at Charlotte -- October 17, 2008
|
| 344. | Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared detection and imaging
NRO, Invited Seminar
Chantilly, VA -- October 7, 2008
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| 345. | Heterogeneous Monolithic Integration of III-V Semiconductors on GaAs and Si Substrates for Large Format Infrared Focal Plane Array Development
DARPA Common Platform Composite Wafer Technology: IR Materials Workshop
Chicago, IL -- October 6, 2008
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| 346. | High Performance QC Lasers: Latest Achievements and Future Trends
International Quantum Cascade Lasers School and Workshop (IQCLSW)
Monte Verita, Switzerland -- September 14, 2008
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| 347. | Very High Performance LWIR Type-II InAs/GaSb Superlattice Photodiodes with M-Structure
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
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| 348. | Development of Material Quality and Structural Design for High Performance Type II InAs/GaSb Superlattice Photodiodes
SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and Technologies
San Diego, CA -- August 11, 2008
|
| 349. | III-Nitride Based UV Single Photon Detection (APDs)
2nd International Symposium on Growth of III-Nitrides (ISGN-2)
Laforet Shuzenji Izu, Japan -- July 6, 2008
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| 350. | Type II InAs/GaSb Superlattices: A Promising Material System for Infrared
2008 Euro American Workshop on Information Optics
Annecy, France -- June 1, 2008
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Channel
Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu