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6010.  Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices
A. Haddadi, S. Adhikary, A. Dehzangi, and M. Razeghi
Applied Physics Letters 109, 021107 (2016)-- July 12, 2016 ...[Visit Journal]
A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Near a wavelength of 4 μm saturated optical gains of 668 and 639 at 77 and 150 K, respectively, are demonstrated over a wide dynamic range. At 150 K, the unity optical gain collector dark current density and DC current gain are 1 × 10−3 A/cm² and 3710, respectively. This demonstrates the potential for use in high-speed applications. In addition, the phototransistor exhibits a specific detectivity value that is four times higher compared with a state-of-the-art type-II superlattice-based photodiode with a similar cut-off wavelength at 150 K. [reprint (PDF)]
 
240.  High speed type-II superlattice based photodetectors transferred on sapphire
Arash Dehzangi, Ryan McClintock, Donghai Wu, Jiakai Li, Stephen Johnson, Emily Dial and Manijeh Razeghi
Applied Physics Express, Volume 12, Number 11-- October 3, 2019 ...[Visit Journal]
We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top–down processing and a chemical epilayer release technique. After transfer the −3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 μm diameter circular mesas under -15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance. Direct Link [reprint (PDF)]
 
225.  nBn extended short-wavelength infrared focal plane array
ARASH DEHZANGI, ABBAS HADDADI, ROMAIN CHEVALLIER, YIYUN ZHANG, AND MANIJEH RAZEGHI
Optics Letters Vol. 43, Issue 3, pp. 591-594 (2018)-- February 1, 2018 ...[Visit Journal]
An extended short-wavelength nBn InAs/GaSb/AlSb type-II superlattice-based infrared focal plane array imager was demonstrated. A newly developed InAs0.10Sb0.90∕GaSb superlattice design was used as the large-bandgap electron barrier in this photodetector. The large band gap electron-barrier design in this nBn photodetector architecture leads to the device having lower dark current densities. A new bi-layer etch-stop scheme using a combination of InAs0.91Sb0.09 bulk and AlAs0.1Sb0.9∕GaSb superlattice layers was introduced to allow complete substrate removal and a shorter wavelength cut-on. Test pixels exhibit 100% cutoff wavelengths of ∼2.30 and ∼2.48 μm at 150 and 300 K, respectively. The devices achieve saturated quantum efficiency values of 59.7% and 63.8% at 150 and 300 K, respectively, under backside illumination and without any antireflection coating.At 150 K, photodetectors exhibit dark current density of 8.75 × 10−8 A∕cm² under −400 mV applied bias, providing specific detectivity of 2.82 × 1012 cm · Hz1∕2∕W at 1.78 μm. At 300 K, the dark current density reaches 4.75 × 10−2 A∕cm² under −200 mV bias, providing a specific detectivity of 8.55 × 109 cm · Hz1∕2∕W 1.78 μm. [reprint (PDF)]
 
121.  Extended short wavelength infrared heterojunction phototransistors based on type II superlattices
Arash Dehzangi , Ryan McClintock, Donghai Wu , Abbas Haddadi, Romain Chevallier , and Manijeh Razeghi
Applied Physics Letters 114, 191109-- May 17, 2019 ...[Visit Journal]
A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of 2.3 λ at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 X 103 A/cm² and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 X 1011 cm·Hz½/W at 300 K which remains constant over a broad range of wavelengths and applied biases. [reprint (PDF)]
 
83.  Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
Donghai Wu, Jiakai Li, Arash Dehzangi, and Manijeh Razeghi
AIP Advances 10, 025018 (2020)-- February 11, 2020 ...[Visit Journal]
A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the photodetector exhibits a peak responsivity of 1.48 A/W, corresponding to a quantum efficiency of 47% at −50 mV applied bias under front-side illumination, with a 50% cutoff wavelength of 4.4 μm. With an R×A of 12,783 Ω·cm² and a dark current density of 1.16×10−5A/cm² under −50 mV applied bias, the photodetector exhibits a specific detectivity of 7.1×1011 cm·Hz½/W. At 300 K, the photodetector exhibits a dark current density of 0.44 A/cm²and a quantum efficiency of 39%, resultingin a specific detectivity of 2.5×109 cm·Hz½/W. [reprint (PDF)]
 
70.  High power continuous wave operation of single mode quantum cascade lasers up to 5 W spanning λ∼3.8-8.3 µm
Quanyong Lu, Steven Slivken, Donghai Wu, and Manijeh Razeghi
Optics Express Vol. 28, Issue 10, pp. 15181-15188 (2020)-- May 4, 2020 ...[Visit Journal]
In this work, we report high power continuous wave room-temperature operation single mode quantum cascade lasers in the mid-infrared spectral range from 3.8 to 8.3 µm. Single mode robustness and dynamic range are enhanced by optimizing the distributed feedback grating coupling design and the facet coatings. High power single mode operation is secured by circumventing the over-coupling issue and spatial hole burning effect. Maximum single-facet continuous-wave output power of 5.1 W and wall plug efficiency of 16.6% is achieved at room temperature. Single mode operation with a side mode suppression ratio of 30 dB and single-lobed far field with negligible beam steering is observed. The significantly increased power for single mode emission will boost the QCL applications in long-range free-space communication and remote sensing of hazardous chemicals. [reprint (PDF)]
 
41.  High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1-xSbx superlattice photodetector by MOCVD
Donghai Wu, Arash Dehzangi, Jiakai Li, and Manijeh Razeghi
Appl. Phys. Lett. 116, 161108 (2020)-- April 21, 2020 ...[Visit Journal]
We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1-xSbx superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77K, the photodetector exhibits a peak responsivity of 0.70A/W at 3.65λ, corresponding to a quantum efficiency of 24% at zero bias without anti-reflection coating, with a 50% cutoff wavelength of 4.28λ. With an R0A value of 3.2x105 Ω·cm2 and a dark current density of 9.6x10-8 A/cm² bias of -20mV at 77K, the photodetector exhibits a specific detectivity of 2.9x1012cm·Hz½/W. At 150K, the photodetector exhibits a dark current density of 9.1x10-6 A/cm² and a quantum efficiency of 25%, resulting in a detectivity of 3.4x1011cm·Hz/W. [reprint (PDF)]
 
32.  Type-II superlattice-based heterojunction phototransistors for high speed applications
Jiakai Li, Arash Dehzangi, Donghai Wu, Ryan McClintock, Manijeh Razeghi
Infrared Physics and Technology 108 (2020) 1033502-- May 2, 2020 ...[Visit Journal]
In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between -3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a -3 dB cut-off frequency of 2.8 GHz. [reprint (PDF)]
 
30.  Sb-based third generation at Center for Quantum Devices
Razeghi, Manijeh
SPIE Proceedings Volume 11407, Infrared Technology and Applications XLVI; 114070T (2020)-- April 23, 2020 ...[Visit Journal]
Sb-based III-V semiconductors are a promising alternative to HgCdTe. They can be produced with a similar bandgap to HgCdTe, but take advantage of the strong bonding between group III and group V elements which leads to very stable materials, good radiation hardness, and high uniformity. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the Sb-based 3th generation imagers. [reprint (PDF)]
 
25.  Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
Arash Dehzangi, Ryan McClintock, Abbas Haddadi, Donghai Wu, Romain Chevallier, Manijeh Razeghi
Scientific Reports volume 9, Article number: 5003 (2019) -- March 21, 2019 ...[Visit Journal]
Visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor based on type–II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down to visible wavelengths. The photodetectors exhibit room–temperature (300K) peak responsivity of 0.6 A/W at ~1.7 μm, corresponding to a quantum efficiency of 43% at zero bias under front–side illumination, without any anti–reflection coating where the visible cut−on wavelength of the devices is <0.5 µm. With a dark current density of 5.3 × 10−4 A/cm² under −20 mV applied bias at 300K, the photodetectors exhibit a specific detectivity of 4.72 × 1010 cm·Hz½W-1. At 150K, the photodetectors exhibit a dark current density of 1.8 × 10−10 A/cm² and a quantum efficiency of 40%, resulting in a detectivity of 5.56 × 1013 cm·Hz½/W [reprint (PDF)]
 
25.  High-speed free-space optical communications based on quantum cascade lasers and type-II superlattice detectors
Stephen M. Johnson; Emily Dial; M. Razeghi
Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128814 (31 January 2020)-- January 31, 2020 ...[Visit Journal]
Free-space optical communications (FSOC) is a promising avenue for point-to-point, high-bandwidth, and high-security communication links. It has the potential to solve the “last mile” problem modern communication systems face, allowing for high-speed communication links without the expensive and expansive infrastructure required by fiber optic and wireless technologies 1 . Although commercial FSOC systems currently exist, due to their operation in the near infrared and short infrared ranges, they are necessarily limited by atmospheric absorption and scattering losses 2 . Mid-infrared (MWIR) wavelengths are desirable for free space communications systems because they have lower atmospheric scattering losses compared to near-infrared communication links. This leads to increased range and link uptimes. Since this portion of the EM spectrum is unlicensed, link establishment can be implemented quickly. Quantum cascade lasers (QCL) are ideal FSOC transmitters because their emission wavelength is adjustable to MWIR 3 . Compared to the typical VCSEL and laser diodes used in commercial NIR and SWIR FSOC systems, however, they require increased threshold and modulation currents 4 . Receivers based on type-II superlattice (T2SL) detectors are desired in FSOC for their low dark current, high temperature operation, and band gap tunable to MWIR 5. In this paper, we demonstrate the implementation of a high-speed FSOC system using a QCL and a T2SL detector. [reprint (PDF)]
 
25.  Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation
Arash Dehzangi, Donghai Wu, Ryan McClintock, Jiakai Li, and Manijeh Razeghi
Appl. Phys. Lett. 116, 221103 (2020); doi: 10.1063/5.0010273 -- June 2, 2020 ...[Visit Journal]
In this Letter, we report the demonstration of zinc ion-implantation to realize planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices. At 77K, the photodetectors exhibit a peak responsivity of 0.68 A/W at 3.35 μm, corresponding to a quantum efficiency of 23.5% under Vb=−80mV, without anti-reflection coating; these photodetectors have a 100% cutoff wavelength of 4.28 μm. With an R0 x A value of 1.53x104 Ω·cm² and a dark current density of 1.23x10−6 A/cm² under an applied bias of −80mV at 77K, the photodetectors exhibit a specific detectivity of 9.12x1011cm·Hz½/W. [reprint (PDF)]
 
23.  Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition
Donghai Wu, Arash Dehzangi, and Manijeh Razeghi
Appl. Phys. Lett. 115, 061102-- August 6, 2019 ...[Visit Journal]
We report design, growth, and characterization of midwavelength infrared nBn photodetectors based on a type-II InAs/InAs1-xSbx superlattice on a GaSb substrate grown by metal-organic chemical vapor deposition. An InAs/AlAs1-ySby/InAs/InAs1-xSbx superlattice design was used as the large bandgap electron barrier in the photodetectors. At 150 K, the photodetector exhibits a peak responsivity of 1.23 A/W, corresponding to a quantum efficiency of 41% at an applied bias voltage of −100 mV under front-side illumination, with a 50% cut-off wavelength of 4.6 μm. With an R × A of 356 Ω·cm2 and a dark current density of 1.6 × 10−4 A/cm2 under an applied bias of −100 mV at 150 K, the photodetector exhibits a specific detectivity of 1.4 × 1011 cm·Hz1/2/W. [reprint (PDF)]
 
21.  Fabrication of 12 µm pixel-pitch 1280 × 1024 extended short wavelength infrared focal plane array using heterojunction type-II superlattice-based photodetector
Arash Dehzangi , Abbas Haddadi, Romain Chevallier, Yiyun Zhang and Manijeh Razegh
Semicond. Sci. Technol. 34 (2019)-- February 4, 2019 ...[Visit Journal]
We present an initial demonstration of a 1280 × 1024 extended short-wavelength infrared focal plane array (FPA) imager with 12μm pixel-pitch based on type–II InAs/AlSb/GaSb superlattice heterojunction photodetectors, with a novel bandstructure-engineered photo-generated carrier extractor as the window layer in the hetero structure to efficiently extract the photo-generated carriers. This heterostructure with a larger bandgap top window/contact layer leads to the device having lower dark current density compared to conventional pn junction devices. The large format FPA was fabricated with 12 μm pixel-pitch using a developed fabrication process. Test pixels fabricated separately exhibit 100% cut–off wavelengths of ∼2.22, ∼2.34μm, and ∼2.45μm at 150, 200K, and 300K. The test devices achieve saturated quantum efficiency values under zero bias of 54.3% and 68.4% at 150 and 300K, under back-side illumination and without any anti-reflection coating. At 150K, these photodetectors exhibit dark current density of 1.63 × 10−7 A·cm−2 under −20mV applied bias providing a specific detectivity of 1.01 × 1011 cm ·Hz½/W at 1.9μm. [reprint (PDF)]
 
21.  Room temperature terahertz semiconductor frequency comb
Quanyong Lu, Feihu Wang, Donghai Wu, Steven Slivken & Manijeh Razeghi
Nature Communications 10, 2403 (2019)-- June 3, 2019 ...[Visit Journal]
A terahertz (THz) frequency comb capable of high-resolution measurement will significantly advance THz technology application in spectroscopy, metrology and sensing. The recently developed cryogenic-cooled THz quantum cascade laser (QCL) comb has exhibited great potentials with high power and broadband spectrum. Here, we report a room temperature THz harmonic frequency comb in 2.2 to 3.3 THz based on difference-frequency generation from a mid-IR QCL. The THz comb is intracavity generated via down-converting a mid-IR comb with an integrated mid-IR single mode based on distributed-feedback grating without using external optical elements. The grating Bragg wavelength is largely detuned from the gain peak to suppress the grating dispersion and support the comb operation in the high gain spectral range. Multiheterodyne spectroscopy with multiple equally spaced lines by beating it with a reference Fabry-Pérot comb confirms the THz comb operation. This type of THz comb will find applications to room temperature chip-based THz spectroscopy. [reprint (PDF)]
 
20.  Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD
D. H. Wu, Y. Y. Zhang, and M. Razeghi
Applied Physics Letters 112, 111103 (2018)-- March 14, 2018 ...[Visit Journal]
We demonstrate room temperature operation of In0.5Ga0.5Sb/InAs type-II quantum well photodetectors on InAs substrate grown by metal-organic chemical vapor deposition. At 300 K, the detector exhibits a dark current density of 0.12 A/cm2, peak responsivity of 0.72 A/W corresponding to a quantum efficiency of 23.3%, with calculated specific detectivity of 2.4×109 cm.Hz1/2/W at 3.81 μm. [reprint (PDF)]
 
20.  High quantum efficiency mid-wavelength infrared type-II InAs/InAs1-xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition
Donghai Wu , Quentin Durlin, Arash Dehzangi , Yiyun Zhang , and Manijeh Razeghi
Appl. Phys. Lett. 114, 011104-- January 8, 2019 ...[Visit Journal]
We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs1-xSbx superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 um, the dark current density is 3.3x10−4 A/cm2 under −20mV bias, and the peak responsivity is 1.76A/W corresponding to a quantum efficiency of 55% without anti-reflection coating. A specific detectivity of 1.2x1011cmHz1/2/W is achieved at 4.0 um under −20mV bias at 150 K. [reprint (PDF)]
 
17.  Demonstration of long wavelength infrared Type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition
D. H. Wu, A. Dehzangi, Y. Y. Zhang, M. Razeghi
Applied Physics Letters 112, 241103 (2018)-- June 12, 2018 ...[Visit Journal]
We report the growth and characterization of long wavelength infrared type-II InAs/InAs1−xSbx superlattices photodiodes with a 50% cut-off wavelength at 8.0 μm on GaSb substrate grown by metalorganic chemical vapor deposition. At 77 K, the photodiodes exhibited a differential resistance at zero bias (R0A) 8.0 Ω·cm2, peak responsivity of 1.26 A/W corresponding to a quantum efficiency of 21%. A specific detectivity of 5.4×1010 cm·Hz1/2/W was achieved at 7.5 μm. [reprint (PDF)]
 
17.  Room temperature quantum cascade lasers with 22% wall plug efficiency in continuous-wave operation
F. Wang, S. Slivken, D. H. Wu, and M. Razeghi
Optics Express Vol. 28, Issue 12, pp. 17532-17538 (2020) •https://doi.org/10.1364/OE.394916-- June 8, 2020 ...[Visit Journal]
We report the demonstration of quantum cascade lasers (QCLs) with improved efficiency emitting at a wavelength of 4.9µm in pulsed and continuous-wave(CW)operation. Based on an established design and guided by simulation, the number of QCL-emitting stages is increased in order to realize a 29.3% wall plug efficiency (WPE) in pulsed operation at room temperature. With proper fabrication and packaging, a 5-mm-long, 8-µm-wide QCL with a buried ridge waveguide is capable of 22% CW WPE and 5.6 W CW output power at room temperature. This corresponds to an extremely high optical density at the output facet of ∼35 MW/cm2, without any damage. [reprint (PDF)]
 
16.  

-- November 30, 1999
 
16.  High-power, continuous-wave, phase-locked quantum cascade laser arrays emitting at 8 μm
WENJIA ZHOU,QUAN-YONG LU,DONG-HAI WU, STEVEN SLIVKEN, AND MANIJEH RAZEGHI
OPTICS EXPRESS 27, 15776-15785 (2019)-- May 20, 2019 ...[Visit Journal]
We report a room-temperature eight-element phase-locked quantum cascade laser array emitting at 8 μm with a high continuous-wave power of 8.2 W and wall plug efficiency of 9.5%. The laser array operates primarily via the in-phase supermode and has single-mode emission with a side-mode suppression ratio of ~20 dB. The quantum cascade laser active region is based on a high differential gain (8.7 cm/kA) and low voltage defect (90 meV) design. A record high wall plug efficiency of 20.4% is achieved from a low loss buried ridge type single-element Fabry-Perot laser operating in pulsed mode at 20 °C. [reprint (PDF)]
 
15.  Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier
A. Haddadi, R. Chevallier, A. Dehzangi, and M. Razeghi
Applied Physics Letters 110, 101104 (2017)-- March 8, 2017 ...[Visit Journal]
Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate have been demonstrated. An AlAsSb/GaSb H-structure superlattice design was used as the large-bandgap electron-barrier in these photodetectors. The photodetector is designed to have a 100% cut-off wavelength of ∼2.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.65 A/W at 1.9 μm, corresponding to a quantum efficiency of 41% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 78 Ω·cm² and a dark current density of 8 × 10−3 A/cm² under −400 mV applied bias at 300 K, the nBn photodetector exhibited a specific detectivity of 1.51 × 1010 Jones. At 150 K, the photodetector exhibited a dark current density of 9.5 × 10−9 A/cm² and a quantum efficiency of 50%, resulting in a detectivity of 1.12 × 1013 Jones. [reprint (PDF)]
 
14.  Substrate removal for high quantum efficiency back side illuminated type-II InAs/GaSb photodetectors
P.Y. Delaunay, B.M. Nguyen, D. Hoffman and M. Razeghi
Applied Physics Letters, Vol. 91, No. 23, p. 231106-- December 3, 2007 ...[Visit Journal]
A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II InAs/GaSb superlattice photodetectors. After etching of the GaSb substrate with a CrO3 based solution, the quantum efficiency of the diodes presents Fabry-Pérot oscillations averaging at 56%. Due to the confinement of the infrared light inside the devices, the quantum efficiency for certain devices reaches 75% at 8.5 µm. The implementation of this new technique to a focal plane array resulted in a decrease of the integration time from 0.23 to 0.08 ms. [reprint (PDF)]
 
14.  Room temperature continuous wave THz frequency comb based on quantum cascade lasers
M. Razeghi; Q. Y. Lu; F. H. Wang; D. H. Wu; S. Slivken
Proc. SPIE 11124, Terahertz Emitters, Receivers, and Applications X, 1112407 (6 September 2019) -- September 6, 2019 ...[Visit Journal]
Frequency combs, spectra of phase-coherent equidistant lines, have revolutionized time and frequency metrology. The recently developed quantum cascade laser (QCL) comb has exhibits great potential with high power and broadband spectrum. However, in the terahertz (THz) range, cryogenic cooling has to be applied for THz QCL combs. We report a room temperature THz frequency comb at 3.0 THz based on difference-frequency generation from a mid-IR QCL comb. A largely detuned distributed-feedback grating is integrated into the QCL cavity to provide the single mode operation as well as enhanced spatial hole-burning effect for multimode comb operation. Multiheterodyne spectroscopy with multiple equally spaced lines by beating it with a reference Fabry-Pérot comb confirms the THz comb operation. This type of THz comb provides a new solution to chip-based high-speed high-resolution THz spectroscopy with compact size at room temperature. [reprint (PDF)]
 
14.  High-speed short wavelength infrared heterojunction phototransistors based on type II superlattices
Jiakai Li; Arash Dehzangi; Donghai Wu; Manijeh Razeghi
Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128813 (31 January 2020)-- January 31, 2020 ...[Visit Journal]
A two terminal short wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb on GaSb substrate are designed fabricated and presented. With the base thickness of 40 nm, the device exhibited 100% cut-off wavelengths of ~2.3 μm at 300K. The saturated peak responsivity value is of 325.5 A/W at 300K, under front-side illumination without any anti-reflection coating. A saturated optical gain at 300K was 215 a saturated dark current shot noise limited specific detectivity of 4.9×1011 cm·Hz½/W at 300 K was measured. Similar heterojunction phototransistor structure was grown and fabricated with different method of processing for high speed testing. For 80 μm diameter circular diode size under 20 V applied reverse bias, a −3 dB cut-off frequency of 1.0 GHz was achieved, which showed the potential of type-II superlattice based heterojunction phototransistors to be used for high speed detection. [reprint (PDF)]
 

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