Center for Quantum Devices - Most Downloaded Journal Articles

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45.	nBn extended short-wavelength infrared focal plane array ARASH DEHZANGI, ABBAS HADDADI, ROMAIN CHEVALLIER, YIYUN ZHANG, AND MANIJEH RAZEGHI Optics Letters Vol. 43, Issue 3, pp. 591-594-- February 1, 2018 ...[Visit Journal] An extended short-wavelength nBn InAs/GaSb/AlSb type-II superlattice-based infrared focal plane array imager was demonstrated. A newly developed InAs_0.10Sb_0.90∕GaSb superlattice design was used as the large-bandgap electron barrier in this photodetector. The large band gap electron-barrier design in this nBn photodetector architecture leads to the device having lower dark current densities. A new bi-layer etch-stop scheme using a combination of InAs_0.91Sb_0.09 bulk and AlAs_0.1Sb_0.9∕GaSb superlattice layers was introduced to allow complete substrate removal and a shorter wavelength cut-on. Test pixels exhibit 100% cutoff wavelengths of ∼2.30 and ∼2.48 μm at 150 and 300 K, respectively. The devices achieve saturated quantum efficiency values of 59.7% and 63.8% at 150 and 300 K, respectively, under backside illumination and without any antireflection coating.At 150 K, photodetectors exhibit dark current density of 8.75 × 10⁻⁸ A∕cm² under −400 mV applied bias, providing specific detectivity of 2.82 × 10¹² cm · Hz^1∕2∕W at 1.78 μm. At 300 K, the dark current density reaches 4.75 × 10⁻² A∕cm² under −200 mV bias, providing a specific detectivity of 8.55 × 10⁹ cm · Hz^1∕2∕W 1.78 μm. [reprint (PDF)]
30.	Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice Arash Dehzangi, Jiakai Li and Manijeh Razeghi Light: Science & Applications volume 10, Article number: 17 (2021) https://doi.org/10.1038/s41377-020-00453-x ...[Visit Journal] The LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) photodetectors with high detectivity and high responsivity. These photodetectors are highly desirable for applications such as infrared earth science and astronomy, remote sensing, optical communication, and thermal and medical imaging. Here, we report the design, growth, and characterization of a high-gain band-structure-engineered LWIR heterojunction phototransistor based on type-II superlattices. The 1/e cut-off wavelength of the device is 8.0 µm. At 77 K, unity optical gain occurs at a 90 mV applied bias with a dark current density of 3.2 × 10−7 A/cm2. The optical gain of the device at 77 K saturates at a value of 276 at an applied bias of 220 mV. This saturation corresponds to a responsivity of 1284 A/W and a specific detectivity of 2.34 × 1013 cm Hz1/2/W at a peak detection wavelength of ~6.8 µm. The type-II superlattice-based high-gain LWIR device shows the possibility of designing the high-performance gain-based LWIR photodetectors by implementing the band structure engineering approach. [reprint (PDF)]
24.	High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE Jiakai Li, R. K. Saroj, Steven Slivken, V. H. Nguyen, Gail Brown and Manijeh Razeghi Photonics 2022, 9, 664 ...[Visit Journal] In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on InAs/InAsSb type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 um at 77 K. The superlattice for the device was grown by molecular beam epitaxy while the planar device structure was achieved by Zinc diffusion process in a metal–organic chemical vapor deposition reactor. At 77 K, the peak responsivity and the corresponding quantum efficiency had the value of 1.42 A/W and 48% respectively at 3.7 um under -20 mV for the MWIR planar photodetector. At 77 K, the MWIR planar photodetector exhibits a dark current density of 2.0E5 A/cm^2 and the R0A value of ~3.0E2 Ohm cm^2 under -20 mV, which yielded a specific detectivity of 4.0E11 cm Hz^(1/2)/W at 3.7 um. At 150 K, the planar device showed a dark current density of 6.4E-5 A/cm^2 and a quantum efficiency of 49% at ~3.7 um under -20 mV, which yielded a specific detectivity of 2.0E11 cm Hz^(1/2)/W. [reprint (PDF)]
19.	Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer Steven Slivken and Manijeh Razeghi S. Slivken and M. Razeghi,, Journal of Quantum Electronics, Vol. 59, No. 4, doi: 10.1109/JQE.2023.3282710 ...[Visit Journal] We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35 μm. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of >0.7 W near room temperature. [reprint (PDF)]
11.	Development of high power, InP-based quantum cascade lasers on alternative epitaxial platforms Steven Slivken, Nirajman Shrestha, Manijeh Razeghi Proc. of SPIE Vol. 12895, Quantum Sensing and Nano Electronics and Photonics XX, 1289503 (28 January - 1 February 2024, San Francisco) doi: 10.1117/12.3009335 ...[Visit Journal] In this talk, challenges and solutions associated with the monolithic, epitaxial integration of mid- and longwave- infrared, InP-based quantum cascade lasers on GaAs and Si wafers will be discussed. Initial results, including room temperature, high power, and continuous wave operation, will be described. [reprint (PDF)]
9.	Ultrafast Pulse Generation from Quantum Cascade Lasers Feihu Wang, Xiaoqiong Qi, Zhichao Chen, Manijeh Razeghi, and Sukhdeep Dhillon Wang, F.; Qi, X.; Chen, Z.; Razeghi, M.; Dhillon, S. Ultrafast Pulse Generation from Quantum Cascade Lasers. Micromachines 2022, 13, 2063. https://doi.org/10.3390/ mi13122063 ...[Visit Journal] Quantum cascade lasers (QCLs) have broken the spectral barriers of semiconductor lasers and enabled a range of applications in the mid-infrared (MIR) and terahertz (THz) regimes. However, until recently, generating ultrashort and intense pulses from QCLs has been difficult. This would be useful to study ultrafast processes in MIR and THz using the targeted wavelength-by-design properties of QCLs. Since the first demonstration in 2009, mode-locking of QCLs has undergone considerable development in the past decade, which includes revealing the underlying mechanism of pulse formation, the development of an ultrafast THz detection technique, and the invention of novel pulse compression technology, etc. Here, we review the history and recent progress of ultrafast pulse generation from QCLs in both the THz and MIR regimes. [reprint (PDF)]
9.	III-Nitride/Ga2O3 heterostructure for future power electronics: opportunity and challenges Nirajman Shrestha, Jun Hee Lee, F. H. Teherani, Manijeh Razeghi Proc. of SPIE Vol. 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128950B (28 January - 1 February 2024, San Francisco)http://dx.doi.org/10.1117/12.3011688 ...[Visit Journal] Ga2O3 has become the new focal point of high-power semiconductor device research due to its superior capability to handle high voltages in smaller dimensions and with higher efficiencies compared to other commercialized semiconductors. However, the low thermal conductivity of the material is expected to limit device performance. To compensate for the low thermal conductivity of Ga2O3 and to achieve a very high density 2-dimensional electron gas (2DEG), an innovative idea is to combine Ga2O3 with III-Nitrides (which have higher thermal conductivity), such as AlN. However, metal-polar AlN/β-Ga2O3 heterojunction provides type-II heterojunction which are beneficial for optoelectronic application, because of the negative value of specific charge density. On the other hand, N-polar AlN/β- Ga2O3 heterostructures provide higher 2DEG concentration and larger breakdown voltage compared to conventional AlGaN/GaN devices. This advancement would allow the demonstration of RF power transistors with a 10x increase in power density compared to today’s State of the Art (SoA) and provide a solution to size, weight, and power-constrained applications [reprint (PDF)]
9.	High-brightness LWIR quantum cascade lasers F. Wang, S. Slivken, and M. Razeghi Optics Letters, vol. 46, No. 20, 5193 ...[Visit Journal] Long-wave infrared (LWIR, lambda~8-12 um) quantum cascade lasers (QCLs) are drawing increasing interest, as they provide the possibility of long-distance transmission of light through the atmosphere owing to the reduced water absorption. However, their development has been lagging behind the shorter wavelength QCLs due to much bigger technological challenges. In this Letter, through band structure engineering based on a highly localized diagonal laser transition strategy and out-coupler design using an electrically isolated taper structure, we demonstrate high beam quality single-mode LWIR QCLs with high-brightness (2.0 MW cm^-2 sr^-1 for lambda~10 um, 2.2 MW cm^-2 sr^-1 for lambda~9 um, 5.0 MW cm^-2 sr^-1 for lambda~8 um) light extraction from a single facet in continuous-wave operation at 15 ^oC. These results mark an important milestone in exploring the lighting capability of inter-sub-band semiconductor lasers in the LWIR spectral range. [reprint (PDF)]
8.	Recent progress of quantum cascade laser research from 3 to 12 μm at the Center for Quantum Devices MANIJEH RAZEGHI,* WENJIA ZHOU,STEVEN SLIVKEN,QUAN-YONG LU,DONGHAI WU, AND RYAN MCCLINTOC Applied Optics Vol. 56, No. 31 -- October 10, 2017 ...[Visit Journal] The quantum cascade laser (QCL) is becoming the leading laser source in the mid-infrared (mid-IR) range, which contains two atmospheric transmission windows and many molecular fingerprint absorption features. Since its first demonstration in 1994, the QCL has undergone tremendous development in terms of the output power, wall plug efficiency, wavelength coverage, tunability and beam quality. At the Center for Quantum Devices, we have demonstrated high-power continuous wave operation of QCLs covering a wide wavelength range from 3 to 12 μm, with power output up to 5.1 W at room temperature. Recent research has resulted in power scaling in pulsed mode with up to 203 W output, electrically tunable QCLs based on monolithic sampled grating design, heterogeneous QCLs with a broad spectral gain, broadly tunable on-chip beam-combined QCLs, QCL-based mid-IR frequency combs, and fundamental mode surface emitting quantum cascade ring lasers. The developed QCLs will be the basis for a number of next-generation spectroscopy and sensing systems. [reprint (PDF)]
7.	Neutron Activation Analysis of an Iranian Cigarette and its Smoke Z. Abedinzadeh, M. Razeghi and B. Parsa Z. Abedinzadeh, M. Razeghi and B. Parsa, Journal of Radioanalytical Chemistry, VoL 35 [1977) 373-376-- September 1, 1977 ...[Visit Journal] Non-destructive neutron activation analysis, employing a high-resolution Ge(Li) detector, was applied to determine the concentration of 24 trace elements in the tobacco of the Zarrin cigarette which is commercially made in Iran. These elements are: Na, K, Sc, Cr, Mn, Fe, Co, Zn, Se, Br, Rb, Ag, Sb, Cs, Ba, La, Ce, Sm, Eu, Tb, Hf, Au, Hg and Th. The smokes from the combustion of this tobacco and of the cigarette paper were also analysed for these elements and the percentage transference values were calculated. [reprint (PDF)]
7.	2.4 W room temperature continuous wave operation of distributed feedback quantum cascade lasers Q.Y. Lu, Y. Bai, N. Bandyopadhyay, S. Slivken and M. Razeghi Applied Physics Letters, Vol. 98, No. 18, p. 181106-1-- May 4, 2011 ...[Visit Journal] We demonstrate high power continuous-wave room-temperature operation surface-grating distributed feedback quantum cascade lasers at 4.8 μm. High power single mode operation benefits from a combination of high-reflection and antireflection coatings. Maximum single-facet continuous-wave output power of 2.4 W and peak wall plug efficiency of 10% from one facet is obtained at 298 K. Single mode operation with a side mode suppression ratio of 30 dB and single-lobed far field without beam steering is observed. [reprint (PDF)]
7.	Investigation of Enhanced Heteroepitaxy and Electrical Properties in k-Ga2O3 due to Interfacing with β-Ga2O3 Template Layers Junhee Lee, Lakshay Gautam, Ferechteh H. Teherani, Eric V. Sandana, P. Bove, David J. Rogers and Manijeh Razeghi J. Lee, M. Razeghi, Physica Status Solidi A 2023,220, 2200559, https://doi.org/10.1002/pssa.202200559 ...[Visit Journal] Heteroepitaxial k-Ga2O3 films grown by metal-organic chemical vapor deposition (MOCVD) were found to have superior materials and electrical properties thanks to the interfacing with a b-Ga2O3 template layer. k-Ga2O3grown on sapphire has not been able to demonstrate its full potential due to materials imperfections created by strain induced by the lattice mismatch at the interface between the epilayer and the substrate. By adopting a b-Ga2O3 template on a c-sapphire substrate, higher quality k-Ga2O3thin films were obtained, as evidenced by a smoother surface morphology, narrower XRD peaks, and superior electrical performance. The implications of this phenomenon, caused by b-Ga2O3 buffer layer, are already very encouraging for both boosting current device performance and opening up the perspective of novel applications for Ga2O3. [reprint (PDF)]
7.	High Power Mid-Infrared Quantum Cascade Lasers Grown on GaAs Steven Slivken and Manijeh Razeghi Photonics 2022, 9(4), 231 (COVER ARTICLE) ...[Visit Journal] The motivation behind this work is to show that InP-based intersubband lasers with high power can be realized on substrates with significant lattice mismatch. This is a primary concern for the integration of mid-infrared active optoelectronic devices on low-cost photonic platforms, such as Si. As evidence, an InP-based mid-infrared quantum cascade laser structure was grown on a GaAs substrate, which has a large (4%) lattice mismatch with respect to InP. Prior to laser core growth, a metamorphic buffer layer of InP was grown directly on a GaAs substrate to adjust the lattice constant. Wafer characterization data are given to establish general material characteristics. A simple fabrication procedure leads to lasers with high peak power (>14 W) at room temperature. These results are extremely promising for direct quantum cascade laser growth on Si substrates. [reprint (PDF)]
6.	High power, high wall-plug efficiency, high reliability, continuous-wave operation quantum cascade lasers at Center for Quantum Devices Razeghi, Manijeh SPIE Proceedings Volume 11296, Optical, Opto-Atomic, and Entanglement-Enhanced Precision Metrology II; 112961C-- February 25, 2020 ...[Visit Journal] Since the demonstration of the first quantum cascade laser (QCL) in 1997, QCLs have undergone considerable developments in output power, wall plug efficiency (WPE), beam quality, wavelength coverage and tunability. Among them, many world-class breakthroughs were achieved at the Center for Quantum Device at Northwestern University. In this paper, we will discuss the recent progress of our research and present the main contributions of the Center for Quantum Devices to the QCL family on high power, high wall-plug efficiency (WPE), continuous-wave (CW) and room temperature operation lasers. [reprint (PDF)]
6.	Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance E.K. Huang, A. Haddadi, G. Chen, B.M. Nguyen, M.A. Hoang, R. McClintock, M. Stegall, and M. Razeghi OSA Optics Letters, Vol. 36, No. 13, p. 2560-2562-- July 1, 2011 ...[Visit Journal] We report a high performance long-wavelength IR dual-band imager based on type-II superlattices with 100% cutoff wavelengths at 9.5 μm (blue channel) and 13 μm (red channel). Test pixels reveal background-limited behavior with specific detectivities as high as ∼5×10¹¹ Jones at 7.9 μm in the blue channel and ∼1×10¹¹ Jones at 10.2 μm in the red channel at 77 K. These performances were attributed to low dark currents thanks to the M-barrier and Fabry–Perot enhanced quantum efficiencies despite using thin 2 μm absorbing regions. In the imager, the high signal-to-noise ratio contributed to median noise equivalent temperature differences of ∼20 mK for both channels with integration times on the order of 0.5 ms, making it suitable for high speed applications. [reprint (PDF)]
6.	Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer B.M. Nguyen, G. Chen, M.A. Hoang, and M. Razeghi IEEE Journal of Quantum Electronics (JQE), Vol. 47, No. 5, May 2011, p. 686-690-- May 11, 2011 ...[Visit Journal] We report the molecular beam epitaxial growth and characterization of high performance Type-II superlattice photodiodes on 3” GaSb substrates for long wavelength infrared detection. A 7.3 micron thick device structure shows excellent structural homogeneity via atomic force microscopy and x-ray diffraction characterization. Optical and electrical measurements of photodiodes reveal not only the uniformity of the Type-II superlattice material but also of the fabrication process. Across the wafer, at 77 K, photodiodes with a 50% cut-off wavelength of 11 micron exhibit more than 45% quantum efficiency, and a dark current density of 1.0 x 10^-4 A/cm² at 50 mV, resulting in a specific detectivity of 6x10¹¹ cm·Hz^1/2/W. [reprint (PDF)]
6.	Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE Rajendra K. Saroj, Van Hoang Nguyen, Steven Slivken, Gail J. Brown and Manijeh Razeghi IEEE Journal of Quantum Electronics ...[Visit Journal] We report on a planar long-wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular beam epitaxy, followed by a post-growth Zinc diffusion process in a metal-organic chemical vapor deposition reactor. The planar photodetectors showed a peak responsivity of 2.18 A/W, under an applied bias of −20 mV, with a corresponding quantum efficiency of 44.5%, without any anti-reflection coating, and had a 100% cut-off wavelength of 8.5 μm at 77 K temperature. These photodetectors exhibit a specific peak detectivity of 3.0×10^12 cm.Hz^1/2/W, with a dark current density of 1.5 × 10−5 A/cm2 and the differential-resistance-area product of ∼8.6 × 10−1 Ω.cm2, under an applied bias of −20 mV at 77 K. A comparative study between the planar and conventional mesa isolated photodetectors was also carried out. [reprint (PDF)]
6.	Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Undoped Ga2O3 MSM Photodetectors Grown by Pulsed Laser Deposition D. J. Rogers, A. Courtois, F. H. Teherani, V. E. Sandana, P. Bove, X. Arrateig, L. Damé, P. Maso, M. Meftah, W. El Huni, Y. Sama, H. Bouhnane, S. Gautier, A. Ougazzaden, M. Razeghi Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116872D (24 March 2021); doi: 10.1117/12.2596194 ...[Visit Journal] Ga2O3 layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga2O3 (monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I240 : I290) of > 3 x 105 and (I240 : I400) of > 2 x 106) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias. [reprint (PDF)]
6.	Recent advances in mid infrared (3-5 μm) quantum cascade lasers Manijeh Razeghi; Neelanjan Bandyopadhyay; Yanbo Bai; Quanyong Lu; Steven Slivken Optical Materials Express, Vol. 3, Issue 11, pp. 1872-1884 (2013)-- November 2, 2013 ...[Visit Journal] Quantum cascade laser (QCL) is an important source of electromagnetic radiation in mid infrared region. Recent research in mid-IR QCLs has resulted in record high wallplug efficiency (WPE), high continuous wave (CW) output power, single mode operation and wide tunability. CW output power of 5.1 W with 21% WPE has been achieved at room temperature (RT). A record high WPE of 53% at 40K has been demonstrated. Operation wavelength of QCL in CW at RT has been extended to as short as 3μm. Very high peak power of 190 W has been obtained from a broad area QCL of ridge width 400μm. 2.4W RT, CW power output has been achieved from a distributed feedback (DFB) QCL. Wide tuning based on dual section sample grating DFB QCLs has resulted in individual tuning of 50cm-1 and 24 dB side mode suppression ratio with continuous wave power greater than 100 mW. [reprint (PDF)]
6.	High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si Steven Slivken and Manijeh Razeghi Journal of Quantum Electronics, Vol. 58, No. 6, 2300206 ...[Visit Journal] We report on the realization of an InP-based long wavelength quantum cascade laser grown on top of a silicon substrate. This demonstration first required the development of an epitaxial template with a smooth surface, which combines two methods of dislocation filtering. Once wafer growth was complete, a lateral injection buried heterostructure laser geometry was employed for efficient current injection and low loss. The laser emits at a wavelength of 10.8 μm and is capable of operation above 373 K, with a high peak power (>4 W) at room temperature. Laser threshold behavior with temperature is characterized by a T0 of 178 K. The far field beam shape is single lobed, showing fundamental transverse mode operation. [reprint (PDF)]
6.	Recent progress of widely tunable, CW THz sources based QCLs at room temperature Manijeh Razeghi Terahertz Science and Technology, Vol.10, No.4, pp. 87-151-- December 7, 2017 ...[Visit Journal] The THz spectral region is of significant interest to the scientific community, but is one of the hardest regions to access with conventional technology. A wide range of compelling new applications are initiating a new revolution in THz technology, especially with regard to the development of compact and versatile devices for THz emission and detection. In this article, recent advances with regard to III-V semiconductor optoelectronics are explored with emphasis on how these advances will lead to the next generation of THz component technology [reprint (PDF)]
6.	-- November 30, 1999
5.	EPR STUDY OF Mn 2. AROUND THE FERROELASTIC TRANSITION POINT OF Pb3(PO4)2 M. Razeghi, B. Houlier and M. Yuste M. Razeghi et al. EPR STUDY OF Mn 2. AROUND THE FERROELASTIC TRANSITION POINT OF Pb3(PO4)2, Solid State Communications, Vol. 26, pp. 665-668. -- January 26, 1978 ...[Visit Journal] The spin Hamiltonian parameters of Mn 2÷ have been measured above and below the transition point (180"C) of the lead phosphate. They show that Mn 2+ substitutes a Pbl ion. Between 175 and 180vC the principal axis OX of the fine tensor is parallel to the wave vector of the soft mode which condensates at the transition point. An exaltation of the linewidth is observed. The linewidth remains constant within 50C of Te; in this temperature range, the "static regime" is achieved, and the correlation time of the fluctuations is less than 10 -s sec. [reprint (PDF)]
5.	Mid‑wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice Jiakai Li, Arash Dehzangi, Gail Brown, Manijeh Razeghi Scientifc Reports \| (2021) 11:7104 \| https://doi.org/10.1038/s41598-021-86566-8 ...[Visit Journal] In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-of wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be ~ 0.097 at 200 K. [reprint (PDF)]
5.	Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector Manijeh Razeghi, Arash Dehzangi, Jiakai Li Results in Optics Volume 2, January 2021, 100054 https://doi.org/10.1016/j.rio.2021.100054 ...[Visit Journal] Type-II InAs/GaSb superlattices (T2SLs) has drawn a lot of attention since it was introduced in 1970, especially for infrared detection as a system of multi-interacting quantum wells. In recent years, T2SL material system has experienced incredible improvements in material quality, device structure designs and device fabrication process, which elevated the performances of T2SL-based photo-detectors to a comparable level to the state-of-the-art material systems for infrared detection such as Mercury Cadmium Telluride (MCT). As a pioneer in the field, center for quantum devices (CQD) has been involved in growth, design, characterization, and introduction of T2SL material system for infrared photodetection. In this review paper, we will present the latest development of bias-selectable multi-band infrared photodetectors at the CQD, based on InAs/GaSb/AlSb and InAs/InAs1-xSbx type-II superlattice. [reprint (PDF)]

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