Center for Quantum Devices - Most Downloaded Journal Articles

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13.	Schottky barrier heights and conduction-band offsets of In_1-xGa_xAs_1-yP_y lattice matched to GaAs J.K. Lee, Y.H. Cho, B.D. Choe, K.S. Kim, H.I. Jeon, H. Lim and M. Razeghi Applied Physics Letters 71 (7)-- August 18, 1997 ...[Visit Journal] The Schottky barrier heights of Au/In_1−xGa_xAs_1−yP_y contacts have been determined as a function of y by the capacitance–voltage and temperature dependent current–voltage characteristics measurements. The barrier height is observed to increase as y is increased for both n- and p-type materials, with a more rapid increase for the p-type material. The compositional variation of the barrier heights for Au/n-In_1−xGa_xAs_1−yP_y is found to be identical to that of the conduction-band offsets in In_1−xGa_xAs_1−yP_y/GaAs heterojunctions. A possible cause of this phenomenon is also discussed. [reprint (PDF)]
13.	Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices P.Y. Delaunay, B.M. Nguyen, D. Hoffman, E.K. Huang, P. Manurkar, S. Bogdanov and M. Razeghi SPIE Proceedings, San Jose, CA Volume 7222-0W-- January 26, 2009 ...[Visit Journal] Recent advances in the design and fabrication of Type-II InAs/GaSb superlattices allowed the realization of high performance long wavelength infrared focal plane arrays. The introduction of an Mstructure barrier between the n-type contact and the pi active region reduced the tunneling component of the dark current. The M-structure design improved the noise performance and the dynamic range of FPAs at low temperatures. At 81K, the NEDT of the focal plane array was 23 mK. The noise of the camera was dominated by the noise component due to the read out integrated circuit. At 8 µm, the median quantum efficiency of the detectors was 71%, mainly limited by the reflections on the backside of the array. [reprint (PDF)]
13.	Noise analysis in Type-II InAs/GaSb Focal Plane Arrays P.Y. Delaunay and M. Razeghi Virtual Journal of Nanoscale Science and Technology, Vol. 20, No. 14-- October 5, 2009 ...[Visit Journal][reprint (PDF)]
13.	Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, P. R. Bijjam, B.-M. Nguyen, and M. Razeghi Applied Physics Letters 103, 033512 (2013)-- July 17, 2013 ...[Visit Journal] Capacitance-voltage measurement was utilized to characterize impurities in the non-intentionally doped region of Type-II InAs/GaSb superlattice p-i-n photodiodes. Ionized carrier concentration versus temperature dependence revealed the presence of a kind of defects with activation energy below 6 meV and a total concentration of low 10¹⁵ cm⁻³. Correlation between defect characteristics and superlattice designs was studied. The defects exhibited a p-type behavior with decreasing activation energy as the InAs thickness increased from 7 to 11 monolayers, while maintaining the GaSb thickness of 7 monolayers. With 13 monolayers of InAs, the superlattice became n-type and the activation energy deviated from the p-type trend. [reprint (PDF)]
13.	Relaxation kinetics in quantum cascade laser S. Slivken, V. Litvinov, M. Razeghi, and J.R. Meyer Journal of Applied Physics 85 (2)-- January 15, 1999 ...[Visit Journal] Relaxation kinetics in a quantum cascade intersubband laser are investigated. Distribution functions and gain spectra of a three-subband double-quantum-well active region are obtained as a function of temperature and injection current. The potentially important role of the nonequilibrium phonons at lasing threshold is shown and discussed in details. It is shown that the threshold current is strongly dependent of the power dissipated in the active region in steady state. The numerical calculations for an 8.5 μm laser illustrate the general issues of relaxation kinetics in quantum cascade lasers. Temperature dependence of the threshold current is obtained in a good agreement with the experiments. [reprint (PDF)]
13.	LEO of III-Nitride on Al₂O₃ and Si Substrates M. Razeghi, P. Kung, P. Sandvik, K. Mi, X. Zhang, V.P. Dravid, J. Freitas, and A. Saxler SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] Lateral epitaxial overgrowth (LEO) has recently become the method of choice to reduce the density of dislocations in heteroepitaxial GaN thin films, and is thus expected to lead to enhanced performance devices. We present here the LEO growth and characterization of GaN films by low pressure metalorganic chemical vapor deposition. Various substrates were used, including basal plane sapphire and oriented Si substrates. The steps in the LEO growth technology will be briefly reviewed. The characterization results will be discussed in detail. The structural, electrical and optical properties of the films were assessed through scanning, atomic and transmission electron microscopy, x-ray diffraction, capacitance-voltage, deep level transient spectroscopy, photoluminescence, and scanning cathodoluminenscence measurements. Single-step and double- step LEO GaN was achieved on sapphire. Similarly high quality LEO grown GaN films were obtained on sapphire and silicon substrates. Clear and dramatic reduction in the density of defects are observed in LEO grown materials using the various characterization techniques mentioned previously. [reprint (PDF)]
13.	Dark current reduction in microjunction-based compound electron barrier type-II InAs/InAs1-xSbx superlattice-based long-wavelength infrared photodetectors Romain Chevallier, Abbas Haddadi, Manijeh Razeghi Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV Page. 1054007-1-- January 26, 2018 ...[Visit Journal] Reduction of dark current density in microjunction-based InAs/InAs_1-xSb_x type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface dark currents. The photodetectors exhibited high surface resistivity after passivation with SiO₂, which permits the use of small size features without having strong surface leakage current degrading the electrical performance. Fabricating a microjunction structure (25×25 μm² mesas with 10×10 μm² microjunctions) with this photodetector double barrier design results in a dark current density of 6.3×10^-6 A/cm² at 77 K. The device has an 8 μm cut-off wavelength at 77 K and exhibits a quantum efficiency of 31% for a 2 μm-thick absorption region, which results in a specific detectivity value of 1.2×10¹² cm·Hz^1/2/W at 77 K. [reprint (PDF)]
13.	High power, continuous wave, quantum cascade ring laser Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken, Q.Y. Lu, D. Caffey, M. Pushkarsky, T. Day and M. Razeghi Applied Physics Letters, Vol. 99, No. 26, p. 261104-1-- December 26, 2011 ...[Visit Journal] We demonstrate a quantum cascade ring laser with high power room temperature continuous wave operation. A second order distributed feedback grating buried inside the waveguide provides both in-plane feedback and vertical power outcoupling. Total output power reaches 0.51 W at an emission wavelength around 4.85 μm. Single mode operation persists up to 0.4 W. The far field analysis indicates that the device operates in a high order mode. The magnetic and electric components of the ring-shaped lasing beam are in radial and azimuthal directions, respectively. [reprint (PDF)]
13.	High quantum efficiency back-illuminated GaN avalanche photodiodes C. Bayram, J.L. Pau, R. McClintock, M. Razeghi, M.P. Ulmer, and D. Silversmith Applied Physics Letters, Vol. 93, No. 21, p. 211107-1-- November 24, 2008 ...[Visit Journal] Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs. [reprint (PDF)]
13.	GaN-based nanostructured photodetectors J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi SPIE Proceedings, San Jose, CA Volume 7222-14-- January 26, 2009 ...[Visit Journal] The use of nanostructures in semiconductor technology leads to the observation of new phenomena in device physics. Further quantum and non-quantum effects arise from the reduction of device dimension to a nanometric scale. In nanopillars, quantum confinement regime is only revealed when the lateral dimensions are lower than 50 nm. For larger mesoscopic systems, quantum effects are not observable but surface states play a key role and make the properties of nanostructured devices depart from those found in conventional devices. In this work, we present the fabrication of GaN nanostructured metal-semiconductor-metal (MSM) and p-i-n photodiodes (PIN PDs) by e-beam lithography, as well as the investigation of their photoelectrical properties at room temperature. The nanopillar height and diameter are about 520 nm and 200 nm, respectively. MSMs present dark currents densities of 0.4 A/cm² at ±100 V. A strong increase of the optical response with bias is observed, resulting in responsivities higher than 1 A/W. The relationship between this gain mechanism and surface states is discussed. PIN PDs yield peak responsivities (R_peak) of 35 mA/W at -4 V and show an abnormal increase of the response (R_peak > 100 A/W) under forward biases. [reprint (PDF)]
13.	Investigation of the Heteroepitaxial Interfaces in the GaInP/GaAs Superlattices by High Resolution X-Ray Diffraction and Dynamical Solutions Xiaoguang He and Manijeh Razeghi Journal of Applied Physics 73 (7)-- April 1, 1993 ...[Visit Journal] Two GaAs/GaInP superlattices grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition have been studied using high resolution x‐ray diffraction measurements and simulations by solving Tagaki–Taupin equations. The strained layers at both interfaces of the GaAs well are identified from the simulations of the measured diffraction patterns. The purging of indium at the interface of GaInP/GaAs accounts for the strained layer at the GaInP/GaAs interface while the pressure difference in the gas lines, which results in the different traveling time to the sample surface, is attributed to the indium‐poor strained layer at the GaAs/GaInP interface. It is shown that high‐resolution x‐ray diffraction measurements combined with a dynamical simulation, are sensitive tools to study the heteroepitaxial interfaces on an atomic layer scale. In addition, the influence of a miscut of the substrate on the measurement is discussed in the article. It is shown that even though the miscut is small, the diffraction geometry is already an asymmetric one. More than 10% error in the superlattice period for a 2° miscut substrate can result when the miscut substrate is considered a symmetric geometry. [reprint (PDF)]
13.	Determination of of Band Gap Energy of Al_1-xIn_xN Grown by Metal Organic Chemical Vapor Deposition in the High Al Composition Regime K.S. Kim, A. Saxler, P. Kung, M. Razeghi, and K.Y. Lim Applied Physics Letters 71 (6)-- August 11, 1997 ...[Visit Journal] Ternary AlInN was grown by metal–organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al_0.92In_0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed. [reprint (PDF)]
13.	Scale-up of the Chemical Lift-off of (In)GaN-based p-i-n Junctions from Sapphire Substrates Using Sacrificial ZnO Template Layers D. J. Rogers, S. Sundaram, Y. El Gmili, F. Hosseini Teherani, P. Bove, V. Sandana, P. L. Voss, A. Ougazzaden, A. Rajan, K.A. Prior, R. McClintock, & M. Razeghi Proc. SPIE 9364, Oxide-based Materials and Devices VI, 936424 -- March 24, 2015 ...[Visit Journal] (In)GaN p-i-n structures were grown by MOVPE on both GaN- and ZnO-coated c-sapphire substrates. XRD studies of the as-grown layers revealed that a strongly c-axis oriented wurtzite crystal structure was obtained on both templates and that there was a slight compressive strain in the ZnO underlayer which increased after GaN overgrowth. The InGaN peak position gave an estimate of 13.6at% for the indium content in the active layer. SEM and AFM revealed that the top surface morphologies were similar for both substrates, with an RMS roughness (5 μm x 5 μm) of about 10 nm. Granularity appeared slightly coarser (40nm for the device grown on ZnO vs 30nm for the device grown on the GaN template) however. CL revealed a weaker GaN near band edge UV emission peak and a stronger broad defect-related visible emission band for the structure grown on the GaN template. Only a strong ZnO NBE UV emission was observed for the sample grown on the ZnO template. Quarter-wafer chemical lift-off (CLO) of the InGaN-based p-i-n structures from the sapphire substrate was achieved by temporary-bonding the GaN surface to rigid glass support with wax and then selectively dissolving the ZnO in 0.1M HCl. XRD studies revealed that the epitaxial nature and strong preferential c-axis orientation of the layers had been maintained after lift-off. This demonstration of CLO scale-up, without compromising the crystallographic integrity of the (In)GaN p-i-n structure opens up the perspective of transferring GaN based devices off of sapphire substrates industrially. [reprint (PDF)]
13.	High performance focal plane array based on type-II InAs/GaSb superlattice heterostructures P.Y. Delaunay and M. Razeghi SPIE Conference, January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000M-1-10.-- February 1, 2008 ...[Visit Journal] Recent progress in growth techniques, structure design and processing has lifted the performances of Type-II InAs/GaSb superlattice photodetectors. A double heterostructure design, based on a low band gap (11 µm) active region and high band gap (5 µm) superlattice contacts, reduced the sensitivity of the superlattice to surface effects. The heterodiodes with an 11 µm cutoff, passivated with SiO₂, presented similar performances to unpassivated devices and a one order of magnitude increase of the resistivity of the sidewalls, even after flip-chip bonding and underfill. Thanks to this new design and to the inversion of the polarity of the devices, a high performance focal plane array with an 11 µm cutoff was demonstrated. The noise equivalent temperature difference was measured as 26 mK and 19 mK for operating temperatures of 81 K and 67 K. At an integration time of 0.08 ms, the FPA presented a quantum efficiency superior to 50%. [reprint (PDF)]
13.	High-speed short wavelength infrared heterojunction phototransistors based on type II superlattices Jiakai Li; Arash Dehzangi; Donghai Wu; Manijeh Razeghi Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128813-- January 31, 2020 ...[Visit Journal] A two terminal short wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb on GaSb substrate are designed fabricated and presented. With the base thickness of 40 nm, the device exhibited 100% cut-off wavelengths of ~2.3 μm at 300K. The saturated peak responsivity value is of 325.5 A/W at 300K, under front-side illumination without any anti-reflection coating. A saturated optical gain at 300K was 215 a saturated dark current shot noise limited specific detectivity of 4.9×10¹¹ cm·Hz^½/W at 300 K was measured. Similar heterojunction phototransistor structure was grown and fabricated with different method of processing for high speed testing. For 80 μm diameter circular diode size under 20 V applied reverse bias, a −3 dB cut-off frequency of 1.0 GHz was achieved, which showed the potential of type-II superlattice based heterojunction phototransistors to be used for high speed detection. [reprint (PDF)]
13.	Background Limited Performance in p-doped GaAs/Ga[0.71]In[0.29]As[0.39]P[0.61] Quantum Well Infrared Photodetectors J. Hoff, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, M. Razeghi and G. Brown Applied Physics Letters 67 (1)-- July 3, 1995 ...[Visit Journal] Background limited infrared photodetection has been achieved up to 100 K at normal incidence with p-type GaAs/Ga_0.71In_0.29As_0.39P_0.61 quantum well intersubband photodetectors grown by low-pressure metalorganic chemical vapor deposition. Photoresponse covers the wavelength range from 2.5 μm up to 7 μm. The device shows photovoltaic response, the cutoff wavelength increases slightly with bias, and the responsivity increases nonlinearly with bias. These effects are attributed to an asymmetric quantum well profile. [reprint (PDF)]
13.	Recent advances in high power mid- and far-wavelength infrared lasers for free space communication S. Slivken and M. Razeghi SPIE Optics East Conference, October 1-4, 2006, Boston, MA Proceedings – Active and Passive Optical Components for Communications VI, Vol. 6389, p. 63890S-1-- October 4, 2006 ...[Visit Journal] Link reliability is a significant issue for free space optical links. Inclement weather, such as fog, can seriously reduce the transmission of light through the atmosphere. However, this effect, for some types of fog, is wavelength-dependent. In order to improve link availability in both metro and hostile environments, mid- and far-wavelength infrared diode lasers can be of use. This paper will discuss some of the recent advances in high-power, uncooled quantum cascade lasers and their potential for use in long range and/or highly reliable free space communication links. [reprint (PDF)]
13.	High-Power (~9 μm) Quantum Cascade Lasers S. Slivken, Z. Huang, A. Evans, and M. Razeghi Applied Physics Letters 80 (22)-- June 3, 2002 ...[Visit Journal] High-power quantum cascade lasers emitting at λ > 9 μm are demonstrated. Accurate control of layer thickness and interfaces is evidenced by x-ray diffraction. Excellent peak power for uncoated lasers, up to 3.5 W per facet for a 25 μm emitter width, is obtained at 300 K for 75 period structures. The threshold current density at 300 K is only 1.4 kA/cm². From 300 to 425 K, the laser exhibits a characteristic temperature, T₀, of 167 K. Over 150 mW of average power is measured per facet for a duty cycle of 6%. Simulation of the average power output reveals a thermal resistance of 12 K/W for epilayer-up mounted ridges. [reprint (PDF)]
13.	Mid-infrared quantum cascade lasers with high wall plug efficiency Y. Bai, B. Gokden, S. Slivken, S.R. Darvish, S.A. Pour, and M. Razeghi SPIE Proceedings, San Jose, CA Volume 7222-0O-- January 26, 2009 ...[Visit Journal] We demonstrate optimization of continuous wave (cw) operation of 4.6 µm quantum cascade lasers (QCLs). A 19.7 µm by 5 mm, double channel processed device exhibits 33% cw WPE at 80 K. Room temperature cw WPE as high as 12.5% is obtained from a 10.6 µm by 4.8 mm device, epilayer-down bonded on a diamond submount. With the semi-insulating regrowth in a buried ridge geometry, 15% WPE is obtained with 2.8 W total output power in cw mode at room temperature. This accomplishment is achieved by systematically decreasing the parasitic voltage drop, reducing the waveguide loss and improving the thermal management. [reprint (PDF)]
13.	Electrically pumped photonic crystal distributed feedback quantum cascade lasers Y. Bai, S.R. Darvish, S. Slivken, P. Sung, J. Nguyen, A. Evans, W. Zhang, and M. Razeghi Applied Physics Letters, Vol. 91, No. 14, p. 141123-1-- October 1, 2007 ...[Visit Journal] We demonstrate electrically pumped, room temperature, single mode operation of photonic crystal distributed feedback (PCDFB) quantum cascade lasers emitting at ~4.75 µm. Ridge waveguides of 100 µm width were fabricated with both PCDFB and Fabry-Pérot feedback mechanisms. The Fabry-Pérot device has a broad emitting spectrum and a double lobed far-field character. The PCDFB device, as expected, has primarily a single spectral mode and a diffraction limited far field characteristic with a full angular width at half maximum of 2.4°. This accomplishment represents the first step in power scaling of single mode, midinfrared laser diodes operating at room temperature. [reprint (PDF)]
13.	Minority electron unipolar photodetectors based on Type-II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection B.M. Nguyen, S. Bogdanov, S. Abdollahi Pour, and M. Razeghi Applied Physics Letters, Vol. 95, No. 18, p. 183502-- November 2, 2009 ...[Visit Journal] We present a hybrid photodetector design that inherits the advantages of traditional photoconductive and photovoltaic devices. The structure consists of a barrier layer blocking the transport of majority holes in a p-type semiconductor, resulting in an electrical transport due to minority carriers with low current density. By using the M-structure superlattice as a barrier region, the band alignments can be experimentally controlled, allowing for the efficient extraction of the photosignal with less than 50 mV bias. At 77 K, a 14 µm cutoff detector exhibits a dark current 3.3 mA·cm⁻², a photoresponsivity of 1.4 A/W, and the associated shot noise detectivity of 4×10¹⁰ Jones. [reprint (PDF)]
13.	Two-dimensional magnetophonon resonance. I. GaInAs-InP superlattices J C Portal, J Cisowski, R J Nicholas, M A Brummell, M Razeghi and M A Poisson J C Portal et al 1983 J. Phys. C: Solid State Phys. 16 L573-- April 5, 1983 ...[Visit Journal] Magnetophonon resonance results are reported for two-dimensional electron gases confined in the GaInAs layers of GaInAs-InP superlattices. Two series of oscillations are observed: one due to scattering by the 'GaAs-like' LO phonon mode of GaInAs, and the second due to interaction with InP LO phonons. The strength of the latter series increases relative to the former as the GaInAs layer thickness is reduced. This is evidence for a long-range phonon interaction, with the InP phonon field extending into the GaInAs to couple significantly with the electrons bound in the quantum wells. No evidence of interface phonons is seen. [reprint (PDF)]
13.	Study of Phase Transition in MOCVD Grown Ga2O3 from κ to β Phase by Ex Situ and In Situ Annealing Junhee Lee, Honghyuk Kim, Lakshay Gautam, Kun He, Xiaobing Hu, Vinayak P. Dravid and Manijeh Razeghi Photonics 2021, 8, 17. https://doi.org/10.3390/ photonics8010017 ...[Visit Journal] We report the post-growth thermal annealing and the subsequent phase transition of Ga2O3 grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We demonstrated the post-growth thermal annealing at temperatures higher than 900 °C under N2 ambience, by either in situ or ex situ thermal annealing, can induce phase transition from nominally metastable κ- to thermodynamically stable β-phase. This was analyzed by structural characterizations such as high-resolution scanning transmission electron microscopy and x-ray diffraction. The highly resistive as-grown Ga2O3 epitaxial layer becomes conductive after annealing at 1000 °C. Furthermore, we demonstrate that in situ annealing can lead to a crack-free β-Ga2O3. [reprint (PDF)]
13.	Characteristics of high quality p-type Al_xGa_1-xN/GaN superlattices A. Yasan, R. McClintock, S.R. Darvish, Z. Lin, K. Mi, P. Kung, and M. Razeghi Applied Physics Letters 80 (12)-- March 18, 2002 ...[Visit Journal] Very-high-quality p-type Al_xGa_1–xN/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x = 26%, the hole concentration reaches a high value of 4.2×10¹⁸ cm^–3 with a resistivity as low as 0.19 Ω · cm by Hall measurement. Measurements confirm that superlattices with a larger period and higher Al composition have higher hole concentration and lower resistivity, as predicted by theory. [reprint (PDF)]
13.	Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, F. Jomard, M. Molinari, M. Troyon, D. McGrouther, J.N. Chapman, M. Razeghi and A. Ougazzaden Journal of Vacuum Science and Technology B, Vol. 27, No. 3, May/June, p. 1655-1657-- May 29, 2009 ...[Visit Journal] This article presents the results of microstructural, compositional, and optical characterization of GaN films grown on ZnO buffered c-sapphire substrates. Transmission electron microscopy showed epitaxy between the GaN and the ZnO, no degradation of the ZnO buffer layer, and no evidence of any interfacial compounds. Secondary ion mass spectroscopy revealed negligible Zn signal in the GaN layer away from the GaN/ZnO interface. After chemical removal of the ZnO, room temperature (RT) cathodoluminescence spectra had a single main peak centered at ~ 368 nm (~3.37 eV), which was indexed as near-band-edge (NBE) emission from the GaN layer. There was no evidence of the ZnO NBE peak, centered at ~379 nm (~3.28 eV), which had been observed in RT photoluminescence spectra prior to removal of the ZnO. [reprint (PDF)]

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