Center for Quantum Devices - Most Downloaded Journal Articles

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16.	Advanced Monolithic Quantum Well Infrared Photodetector Focal Plane Array Integrated with Silicon Readout Integrated Circuit J. Jiang, S. Tsao, K. Mi, M. Razeghi, G.J. Brown, C. Jelen and M.Z. Tidrow Infrared Physics and Technology, 46 (3)-- January 1, 2005 ...[Visit Journal] Today, most infrared focal plane arrays (FPAs) utilize a hybrid scheme. To achieve higher device reliability and lower cost, monolithic FPAs with Si based readout integrated circuits (ROICs) are the trend of the future development. In this paper, two approaches for monolithic FPAs are proposed: double sided integration and selective epitaxy integration. For comparison, the fabrication process for hybrid quantum well infrared photodetectors (QWIP) FPAs are also described. Many problems, such as the growth of QWIPs on Si substrate and processing incompatibility between Si and III–V semiconductors, need to be solved before monolithic FPAs can be realized. Experimental work on GaInAs/InP QWIP-on-Si is given in this paper. A record high detectivity of 2.3×10⁹ jones was obtained for one QWIP-on-Si detector at 77 K. [reprint (PDF)]
15.	Quantum cascade lasers: from tool to product M. Razeghi, Q. Y. Lu, N. Bandyopadhyay, W. Zhou, D. Heydari, Y. Bai, and S. Slivken Optics Express Vol. 23, Issue 7, pp. 8462-8475-- March 25, 2015 ...[Visit Journal] The quantum cascade laser (QCL) is an important laser source in the mid-infrared and terahertz frequency range. The past twenty years have witnessed its tremendous development in power, wall plug efficiency, frequency coverage and tunability, beam quality, as well as various applications based on QCL technology. Nowadays, QCLs can deliver high continuous wave power output up to 5.1 W at room temperature, and cover a wide frequency range from 3 to 300 μm by simply varying the material components. Broadband heterogeneous QCLs with a broad spectral range from 3 to 12 μm, wavelength agile QCLs based on monolithic sampled grating design, and on-chip beam QCL combiner are being developed for the next generation tunable mid-infrared source for spectroscopy and sensing. Terahertz sources based on nonlinear generation in QCLs further extend the accessible wavelength into the terahertz range. Room temperature continuous wave operation, high terahertz power up to 1.9 mW, and wide frequency tunability form 1 to 5 THz makes this type of device suitable for many applications in terahertz spectroscopy, imaging, and communication. [reprint (PDF)]
15.	Mid-infrared quantum cascade lasers with high wall plug efficiency Y. Bai, B. Gokden, S. Slivken, S.R. Darvish, S.A. Pour, and M. Razeghi SPIE Proceedings, San Jose, CA Volume 7222-0O-- January 26, 2009 ...[Visit Journal] We demonstrate optimization of continuous wave (cw) operation of 4.6 µm quantum cascade lasers (QCLs). A 19.7 µm by 5 mm, double channel processed device exhibits 33% cw WPE at 80 K. Room temperature cw WPE as high as 12.5% is obtained from a 10.6 µm by 4.8 mm device, epilayer-down bonded on a diamond submount. With the semi-insulating regrowth in a buried ridge geometry, 15% WPE is obtained with 2.8 W total output power in cw mode at room temperature. This accomplishment is achieved by systematically decreasing the parasitic voltage drop, reducing the waveguide loss and improving the thermal management. [reprint (PDF)]
15.	Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation Andrew Hood, Pierre-Yves Delaunay, Darin Hoffman, Binh-Minh Nguyen, Yajun Wei, Manijeh Razeghi, and Vaidya Nathan Applied Physics Letters 90, 233513-- June 4, 2007 ...[Visit Journal] Effective surface passivation of Type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400×400 to 25×25 µm², with a cutoff wavelength of ~11 µm, exhibited near bulk-limited R₀A values of ~12 Ω·cm², surface resistivities in excess of 10⁴ Ω·cm, and very uniform current-voltage behavior at 77 K. [reprint (PDF)]
15.	Back-illuminated separate absorption and multiplication GaN avalanche photodiodes J.L. Pau, C. Bayram, R. McClintock, M. Razeghi and D. Silversmith Applied Physics Letters, Vol. 92, No. 10, p. 101120-1-- March 10, 2008 ...[Visit Journal] The performance of back-illuminated avalanche photodiodes with separate absorption and multiplication regions is presented. Devices with an active area of 225 µm² show a maximum multiplication gain of 41,200. The calculation of the noise equivalent power yields a minimum value of 3.3×10⁻¹⁴ W·Hz^−1/2 at a gain of 3000, increasing to 2.0×10⁻¹³ W·Hz^−1/2 at a gain of 41,200. The broadening of the response edge has been analyzed as a function of bias. [reprint (PDF)]
15.	Stable single mode terahertz semiconductor sources at room temperature M. Razeghi 2011 International Semiconductor Device Research Symposium, ISDRS [6135180] (2011).-- December 7, 2011 ...[Visit Journal] Terahertz (THz) range is an area of the electromagnetic spectra which has lots of applications but it suffers from the lack of simple working devices which can emit THz radiation, such as the high performance mid-infrared (mid-IR) quantum cascade lasers (QCLs) based on InP technology. The applications for the THz can be found in astronomy and space research, biology imaging, security, industrial inspection, etc. Unlike THz QCLs based on the fundamental oscillators, which are limited to cryogenic operations, semiconductor THz sources based on nonlinear effects of mid-IR QCLs do not suffer from operating temperature limitations, because mid-IR QCLs can operate well above room temperature. THz sources based on difference frequency generation (DFG) utilize nonlinear properties of asymmetric quantum structures, such as QCL structures. [reprint (PDF)]
15.	Highly temperature insensitive quantum cascade lasers Y. Bai, N. Bandyopadhyay, S. Tsao, E. Selcuk, S. Slivken and M. Razeghi Applied Physics Letters, Vol. 97, No. 25-- December 20, 2010 ...[Visit Journal] An InP based quantum cascade laser (QCL) heterostructure emitting around 5 μm is grown with gas-source molecular beam epitaxy. The QCL core design takes a shallow-well approach to maximize the characteristic temperatures, T(0) and T(1), for operations above room temperature. A T(0) value of 383 K and a T(1) value of 645 K are obtained within a temperature range of 298–373 K. In room temperature continuous wave operation, this design gives a single facet output power of 3 W and a wall plug efficiency of 16% from a device with a cavity length of 5 mm and a ridge width of 8 μm. [reprint (PDF)]
15.	Room-temperature, high-power and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ ~ 9.6 µm S.R. Darvish, S. Slivken, A. Evans, J.S. Yu, and M. Razeghi Applied Physics Letters, 88 (20)-- May 15, 2006 ...[Visit Journal] High-power continuous-wave (cw) operation of distributed-feedback quantum-cascade lasers is reported. Continuous-wave output powers of 100 mW at 25 °C and 20 mW at 50 °C are obtained. The device exhibits a cw threshold current density of 1.34 kA/cm², a maximum cw wall-plug efficiency of 1% at 25 °C, and a characteristic temperature of ~190 K in pulsed mode. Single-mode emission near 9.6 μm with a side-mode suppression ratio of ≥ 30 dB and a tuning range of 2.89 cm^–1 from 15 to 50 °C is obtained. [reprint (PDF)]
15.	III-nitride based avalanche photo detectors R. McClintock, E. Cicek, Z. Vashaei, C. Bayram, M. Razeghi and M. Ulmer Proceedings, Vol. 7780, p. 77801B, SPIE Optics and Photonics Symposium, Conference on Detectors and Imaging Devices: Infrared, Focal Plane and Single Photon, San Diego, CA -- August 4, 2010 ...[Visit Journal] Research into III-Nitride based avalanche photodiodes (APDs) is motivated by the need for high sensitivity ultraviolet (UV) detectors in numerous civilian and military applications. By designing III-Nitride photodetectors that utilize low-noise impact ionization high internal gain can be realized-GaN APDs operating in Geiger mode can achieve gains exceeding 1×10⁷. Thus with careful design, it becomes possible to count photons at the single photon level. In this paper we review the current state of the art in III-Nitride visible-blind APDs and discuss the critical design choices necessary to achieve high performance Geiger mode devices. Other major technical issues associated with the realization of visible-blind Geiger mode APDs are also discussed in detail and future prospects for improving upon the performance of these devices are outlined. The photon detection efficiency, dark count rate, and spectral response of or most recent Geiger-mode GaN APDs on free-standing GaN substrates are studied under low photon fluxes, with single photon detection capabilities being demonstrated. We also present our latest results regarding linear mode gain uniformity: the study of gain uniformity helps reveal the spatial origins of gain so that we can better understand the role of defects. [reprint (PDF)]
15.	Intrinsic AlGaN photodetectors for the entire compositional range D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, and M. Razeghi SPIE Conference, San Jose, CA, -- February 12, 1997 ...[Visit Journal] Al_xGa_1-xN ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 X 10⁸ cm·Hz^½/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in Al_xGa_1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples. [reprint (PDF)]
15.	Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance C. Bayram, D.K. Sadana, Z. Vashaei and M. Razeghi SPIE Proceedings, Vol. 8268, p. 826827-- January 22, 2012 ...[Visit Journal] negative differential resistance (NDR). Compared to other negative resistance devices such as (Esaki) tunnel and transferred-electron devices, RTDs operate much faster and at higher temperatures. III-nitride materials, composed of AlGaInN alloys, have wide bandgap, high carrier mobility and thermal stability; making them ideal for high power high frequency RTDs. Moreover, larger conduction band discontinuity promise higher NDR than other materials (such as GaAs) and room-temperature operation. However, earlier efforts on GaN-based RTD structures have failed to achieve a reliable and reproducible NDR. Recently, we have demonstrated for the first time that minimizing dislocation density and eliminating the piezoelectric fields enable reliable and reproducible NDR in GaN-based RTDs even at room temperature. Observation of NDR under both forward and reverse bias as well as at room and low temperatures attribute the NDR behaviour to quantum tunneling. This demonstration marks an important milestone in exploring III-nitride quantum devices, and will pave the way towards fundamental quantum transport studies as well as for high frequency optoelectronic devices such as terahertz emitters based on oscillators and cascading structures. [reprint (PDF)]
15.	Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors G. Chen, E.K. Huang, A.M. Hoang, S. Bogdanov, S.R. Darvish, and M. Razeghi Applied Physics Letters, Vol. 101, No. 21, p. 213501-1-- November 19, 2012 ...[Visit Journal] By using gating technique, surface leakage generated by SiO₂ passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO₂ passivation layer thickness, the saturated gated bias is reduced to −4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω·cm² differential-resistance-area product at −100 mV. With quantum efficiency of 50%, the 11 μm 50% cut-off gated photodiode has a specific detectivity of 7 × 10¹¹ Jones, and the detectivity stays above 2 × 10¹¹ Jones from 0 to −500 mV operation bias. [reprint (PDF)]
15.	High Power 0.98 μm GaInAs/GaAs/GaInP Multiple Quantum Well Laser K. Mobarhan, M. Razeghi, G. Marquebielle and E. Vassilaki Journal of Applied Physics 72 (9)-- November 1, 1992 ...[Visit Journal] We report the fabrication of high quality Ga_0.8In_0.2As/GaAs/Ga_0.51In_0.49P multiple quantum well laser emitting at 0.98 μm grown by low pressure metalorganic chemical vapor deposition. Continuous wave operation with output power of 500 mW per facet was achieved at room temperature for a broad area laser with 130 μm width and 300 μm cavity length. This is an unusually high value of output power for this wavelength laser in this material system. The differential quantum efficiency exceeded 75% with excellent homogeneity and uniformity. The characteristic temperature, T₀ was in the range of 120–130 K. [reprint (PDF)]
15.	The correlation between x-ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices X.G. He, M. Erdtmann, R. Williams, S. Kim, and M. Razeghi Applied Physics Letters 65 (22)-- November 28, 1994 ...[Visit Journal] Strong correlation between x‐ray diffraction characteristics and strain distribution inside GaInP/GaAs superlattices has been reported. It is found that the symmetry of (002) diffraction patterns can be used to evaluate the interface strain status. A sample with no interfacial strains has a symmetric (002) diffraction pattern and weak (004) diffraction pattern. It is also demonstrated that strain distribution in superlattices can be readily estimated qualitatively by analyzing x-ray diffraction patterns. [reprint (PDF)]
15.	Quantum-dot infrared photodetectors and focal plane arrays M. Razeghi, H. Lim, S. Tsao, M. Taguchi, W. Zhang, and A.A. Quivy SPIE Infrared Technology and Applications Conference, April 17-21, 2006, Orlando, FL Proceedings – Infrared Technology and Applications XXXII, Vol. 6206, p. 62060I-1-- April 21, 2006 ...[Visit Journal] We report our recent results about mid-wavelength infrared quantum-dot infrared photodetectors (QDIPs) grown by low-pressure metalorganic chemical vapor deposition. A very high responsivity and a very low dark current were obtained. A high peak detectivity of the order of 3×10¹² Jones was achieved at 77 K. The temperature dependent device performance was also investigated. The improved temperature insensitivity compared to QWIPs was attributed to the properties of quantum dots. The device showed a background limited performance temperature of 220 K with a 45° field of view and 300K background. [reprint (PDF)]
15.	Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2substrates P. Kung, A. Saxler, X. Zhang, D. Walker, R. Lavado, and M. Razeghi Applied Physics Letters 69 (14)-- September 30, 1996 ...[Visit Journal] We report the metalorganic chemical vapor deposition growth and characterization of monocrystalline GaN thin films on β-LiGaO₂ substrates. The influence of the growth temperature on the crystal quality was studied. The structural, electrical, and optical properties of the films were assessed through scanning electron microscopy, x-ray diffraction, Hall measurements, optical transmission, photoluminescence. [reprint (PDF)]
15.	Recent advances in LWIR type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for Quantum Devices M. Razeghi, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E.K. Huang, and M.Z. Tidrow SPIE Porceedings, Vol. 6940, Orlando, FL 2008, p. 694009-- March 17, 2008 ...[Visit Journal] In recent years, Type-II InAs/GaSb superlattice photo-detectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long and very long wavelength infrared regimes. At the Center for Quantum Devices,we have successfully realized very high quantum efficiency, very high dynamic differential resistance R0A - product LWIR Type – II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high quality LWIR Focal Plane Arrays that were 100 % fabricated in - house reaffirms the pioneer position of this university-based laboratory. [reprint (PDF)]
15.	Noise analysis in type-II InAs/GaSb focal plane arrays P.Y. Delaunay and M. Razeghi Journal of Applied Physics, Vol. 106, Issue 6, p. 063110-- September 15, 2009 ...[Visit Journal] A long wavelength infrared focal plane array based on type-II InAs/GaSb superlattices was fabricated and characterized at 80 K. The noise equivalent temperature difference in the array was measured as low as 23 mK for an integration time of 0.129 ms. The noise behavior of the detectors was properly described by a model based on thermal, shot, read out integrated circuit, and photon noises. The noise of the imager was dominated by photon noise for photon fluxes higher than 1.8×10¹⁵ ph·s⁻¹·cm⁻². At lower irradiance, the imager was limited by the shot noise generated by the dark current or the noise of the testing system. The superlattice detector did not create 1/f noise for frequencies above 4 mHz. As a result, the focal plane array did not require frequent calibrations. [reprint (PDF)]
15.	Fabrication of Indium Bumps for Hybrid Infrared Focal Plane Array Applications J. Jiang, S. Tsao, T. O'Sullivan, M. Razeghi, and G.J. Brown Infrared Physics and Technology, 45 (2)-- March 1, 2004 ...[Visit Journal] Hybrid infrared focal plane arrays (FPAs) have found many applications. In hybrid IR FPAs, FPA and Si read out integrated circuits (ROICs) are bonded together with indium bumps by flip-chip bonding. Taller and higher uniformity indium bumps are always being pursued in FPA fabrication. In this paper, two indium bump fabrication processes based on evaporation and electroplating techniques are developed. Issues related to each fabrication technique are addressed in detail. The evaporation technique is based on a unique positive lithography process. The electroplating method achieves taller indium bumps with a high aspect ratio by a unique “multi-stack” technique. This technique could potentially benefit the fabrication of multi-color FPAs. Finally, a proposed low-cost indium bump fabrication technique, the “bump transfer”, is given as a future technology for hybrid IR FPA fabrication. [reprint (PDF)]
15.	Hybrid green LEDs with n-type ZnO substituted for N-type GaN in an inverted P-N junction F. Hosseini Teherani; M. Razeghi; D.J. Rogers; Can Bayram; R. McClintock LEOS Annual Meeting Conference Proceedings, LEOS '09. IEEE, [5343231] (2009) -- October 4, 2009 ...[Visit Journal] Recently, the GaN and ZnO materials systems have attracted considerable attention because of their use in a broad range of emerging applications including light-emitting diodes (LEDs) and solar cells. GaN and ZnO are similar materials with direct wide bandgaps, wurtzite crystal structure, high thermal stability and comparable thermal expansion coefficients, which makes them well suited for heterojunction fabrication. Two important advantages of GaN over ZnO are the reliable p-type doping and the mature know-how for bandgap engineering. Thus GaN-based LEDs can be made to emit from the deep UV right into the green through alloying with Al and In, respectively. The performance is not identical at all wavelengths, however, and the performance of InGaN-based green LEDs is still relatively poor. [reprint (PDF)]
15.	High-speed short wavelength infrared heterojunction phototransistors based on type II superlattices Jiakai Li; Arash Dehzangi; Donghai Wu; Manijeh Razeghi Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128813-- January 31, 2020 ...[Visit Journal] A two terminal short wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb on GaSb substrate are designed fabricated and presented. With the base thickness of 40 nm, the device exhibited 100% cut-off wavelengths of ~2.3 μm at 300K. The saturated peak responsivity value is of 325.5 A/W at 300K, under front-side illumination without any anti-reflection coating. A saturated optical gain at 300K was 215 a saturated dark current shot noise limited specific detectivity of 4.9×10¹¹ cm·Hz^½/W at 300 K was measured. Similar heterojunction phototransistor structure was grown and fabricated with different method of processing for high speed testing. For 80 μm diameter circular diode size under 20 V applied reverse bias, a −3 dB cut-off frequency of 1.0 GHz was achieved, which showed the potential of type-II superlattice based heterojunction phototransistors to be used for high speed detection. [reprint (PDF)]
15.	Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP M. A. di Forte‐Poisson; M. Razeghi; J. P. Duchemin M. A. di Forte‐Poisson, M. Razeghi, J. P. Duchemin; Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP. J. Appl. Phys. 1 December 1983; 54 (12): 7187–7189. https://doi.org/10.1063/1.331956-- December 1, 1983 ...[Visit Journal] In1−x Alx As epitaxial layers were grown on (100) InP substrates by the organometallic vapor phase epitaxy method. Undoped layers with mirror smooth surfaces were obtained for substrate temperatures of 600–650 °C. By adjusting the relative ratio of In and Al, lattice matched In0.52 Al0.48 As epilayers were reproducibly grown on InP substrates. X‐ray measurements, scanning Auger analyses, and electron mobilities are presented. These results show that the quality of the epilayers obtained here was comparable to the best reported layers grown by other methods. [reprint (PDF)]
15.	*High quality AlN and GaN epilayers grown on (001) sapphire, (100) and (111) silicon substrates P. Kung, A. Saxler, X. Zhang, D. Walker, T.C. Wang, I. Ferguson, and M. Razeghi Applied Physics Letters 66 (22)-- May 29, 1995** ...[Visit Journal] The growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates is reported using low pressure metalorganic chemical vapor deposition. X-ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on sapphire, respectively. Room‐temperature optical transmission and photoluminescence (of GaN) measurements confirmed the high quality of the films. The luminescence at 300 and 77 K of the GaN films grown on basal plane sapphire, (100), and (111) silicon was compared. [reprint (PDF)]
15.	Room temperature continuous wave THz frequency comb based on quantum cascade lasers M. Razeghi; Q. Y. Lu; F. H. Wang; D. H. Wu; S. Slivken Proc. SPIE 11124, Terahertz Emitters, Receivers, and Applications X, 1112407-- September 6, 2019 ...[Visit Journal] Frequency combs, spectra of phase-coherent equidistant lines, have revolutionized time and frequency metrology. The recently developed quantum cascade laser (QCL) comb has exhibits great potential with high power and broadband spectrum. However, in the terahertz (THz) range, cryogenic cooling has to be applied for THz QCL combs. We report a room temperature THz frequency comb at 3.0 THz based on difference-frequency generation from a mid-IR QCL comb. A largely detuned distributed-feedback grating is integrated into the QCL cavity to provide the single mode operation as well as enhanced spatial hole-burning effect for multimode comb operation. Multiheterodyne spectroscopy with multiple equally spaced lines by beating it with a reference Fabry-Pérot comb confirms the THz comb operation. This type of THz comb provides a new solution to chip-based high-speed high-resolution THz spectroscopy with compact size at room temperature. [reprint (PDF)]
15.	High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices A. Haddadi, X.V. Suo, S. Adhikary, P. Dianat, R. Chevallier, A.M. Hoang, and M. Razeghi Applied Physics Letters 107 , 141104-- October 5, 2015 ...[Visit Journal] A high-performance short-wavelength infrared n-i-p photodiode based on InAs/InAs1-xSbx/AlAs1-xSbx type-II superlattices on GaSb substrate has been demonstrated. The device is designed to have a 50% cut-off wavelength of ~1.8μm at 300K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.47 A/W at 1.6μm, corresponding to a quantum efficiency of 37% at zero bias under front-side illumination, without any anti-reflection coating. With an R×A of 285 Ω·cm² and a dark current density of 9.6×10^-5 A/cm² under −50mV applied bias at 300 K, the photodiode exhibited a specific detectivity of 6.45×10¹⁰ cm·Hz^½/W. At 200 K, the photodiode exhibited a dark current density of 1.3×10^-8 A/cm² and a quantum efficiency of 36%, resulting in a detectivity of 5.66×10¹² cm·Hz^½/W. [reprint (PDF)]

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