Center for Quantum Devices - Most Downloaded Journal Articles

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1.	GaN, GaAlN, and AlN for use in UV Detectors for Astrophysics: An Update P. Kung, A. Saxler, X. Zhang, D. Walker, M. Razeghi, and M. Ulmer SPIE Photonics West '96 Photodetectors: Materials and Devices; Proceedings 2685-- January 27, 1996 ...[Visit Journal] In SPIE Proceeding 2397 we demonstrated that there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors for astronomical purposes. We suggested that a particularly promising future technology is one based on the ability of investigators to produce high-quality films made of wide bandgap III-IV semiconductors. Here we report on significant progress we have made over the past year to fabricate and test single-pixel devices. The next step will be to measure and improve detective efficiency, measure the solar blindness over a larger dynamic range, and begin developing multiple-pixel designs. [reprint (PDF)]
1.	Comparison of Gain and Threshold Current Density for InGaAsP/GaAs λ = 808 nm) Lasers with Different Quantum-Well Thickness H.J. Yi, J. Diaz, I. Eliashevich, G. Lukas, S. Kim, D. Wu, M. Erdtmann, C. Jelen, S. Slivken, L.J. Wang, and M. Razeghi Journal of Applied Physics 79 (11)-- July 1, 1996 ...[Visit Journal] We investigated the quantum‐size effects of quantum well (QW) on gain and threshold current density for InGaAsP/GaAs (λ=808 nm) laser diodes. In this work, a comparison is made of lasers with different QW thickness while keeping the optical confinement factors constant. We found that the threshold current density and differential efficiency were not affected by narrowing the QW thickness. The theoretical model taking into account the mixing of the valence bands and momentum relaxation for InGaAsP/GaAs lasers with spontaneous emission (optically pumped) measurement shows that the absence of difference between these structures can be attributed to the high relaxation rate. [reprint (PDF)]
1.	Novel Sb-based Alloys for Uncooled Infrared Photodetector Applications M. Razeghi SPIE Conference, San Jose, CA, -- January 22, 2001 ...[Visit Journal] We report on the growth and characterization of InSbBi, InTlSb, InTlP, and the quaternary alloys for uncooled long- wavelength infrared photodetector applications. The layers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Bi and Tl in InSb was investigated with high-resolution x-ray diffraction, energy dispersive x-ray analysis, and optical photoresponse measurements. We also demonstrate the photodetectors fabricated from the grown InSbBi and InTlSb alloys. InSb_0.96Bi_0.04 photoconductive detectors exhibited a responsivity of 3.2 V/W at 77 K. The estimated Johnson noise limited detectivityat 7 micrometers was 1.7 X 10⁸ cm·Hz^½/W at 77 K. A room temperature operating InSb_0.95Bi_0.05 photodetector was also demonstrated.Photoresponse up to 12 micrometers was achieved at 300 K. The responsivity and Johnson noise-limited detectivity at 10.6 μm were 1.9 mV/W and 1.2 X 10⁶ cm·Hz^½/W, respectively. Photoresponse up to 15 μm was achieved at 300 K from quaternary InTlAsSb and InBiAsSb alloys. [reprint (PDF)]
1.	Highly Conductive Co-Doped Ga2O3Si-In Grown by MOCVD Junhee Lee, Honghyuk Kim, Lakshay Gautam and Manijeh Razeghi Coatings 2021, 11(3), 287; https://doi.org/10.3390/coatings11030287 ...[Visit Journal] We report a highly conductive gallium oxide doped with both silicon and indium grown on c-plane sapphire substrate by MOCVD. From a superlattice structure of indium oxide and gallium oxide doped with silicon, we obtained a highly conductive material with an electron hall mobility up to 150 cm2/V·s with the carrier concentration near 2 × 1017 cm−3. However, if not doped with silicon, both Ga2O3:In and Ga2O3 are highly resistive. Optical and structural characterization techniques such as X-ray, transmission electron microscope, and photoluminescence, reveal no significant incorporation of indium into the superlattice materials, which suggests the indium plays a role of a surfactant passivating electron trapping defect levels. [reprint (PDF)]
1.	Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy Ilkay Demir, Yoann Robin, Ryan McClintock, Sezai Elagoz, Konstantinos Zekentes, and Manijeh Razeghi Phys. Status Solidi A, pp. 1–6-- September 30, 2016 ...[Visit Journal] AlN layers have been grown on 200 nm period of nanopatterned Si (111) substrates by cantilever epitaxy and compared with AlN layers grown by maskless lateral epitaxial overgrowth (LEO) on micropatterned Si (111) substrates. The material quality of 5–10 µm thick AlN grown by LEO is comparable to that of much thinner layers (2 µm) grown by cantilever epitaxy on the nanopatterned substrates. Indeed, the latter exhibited root mean square (RMS) roughness of 0.65 nm and X-ray diffraction full width at half-maximum (FWHM) of 710 arcsec along the (0002) reflection and 930 arcsec along the (10̅15) reflection. The corresponding room temperature photoluminescence spectra was dominated by a sharp band edge peak. Back emission ultra violet light emitting diodes (UV LEDs) were fabricated by flip chip bonding to patterned AlN heat sinks followed by complete Si (111) substrate removal demonstrating a peak pulsed power of ∼0.7 mW at 344 nm peak emission wavelength. The demonstrated UV LEDs were fabricated on a cost effective epitaxial structure grown on the nanopatterned Si substrate with a total thickness of 3.3 µm [reprint (PDF)]
1.	Investigation of MgZnO/ZnO heterostructures grown on c-sapphire substrates by pulsed laser deposition D. J. Rogers ; F. Hosseini Teherani ; P. Bove ; A. Lusson ; M. Razeghi Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261X (March 18, 2013)-- March 18, 2013 ...[Visit Journal] MgZnO thin films were grown on c-sapphire and ZnO-coated c-sapphire substrates by pulsed laser deposition from a ZnMgO target with 4 at% Mg. The MgZnO grown on the ZnO underlayer showed significantly better crystal quality than that grown directly on sapphire. AFM studies revealed a significant deterioration in surface morphology for the MgZnO layers compared with the ZnO underlayer. Optical transmission studies indicated a MgZnO bandgap of 3.61eV (compared with 3.34eV for the ZnO), which corresponds to a Mg content of about 16.1 at%. The MgZnO/ZnO heterojunction showed an anomalously low resistivity, which was more than two orders of magnitude less than the MgZnO layer and an order of magnitude lower than that for the ZnO layer. It was suggested that this may be attributable to the presence of a 2D electron gas at the ZnMgO/ZnO heterointerface. [reprint (PDF)]
1.	Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates E. Cicek, Z. Vashaei, C. Bayram, R. McClintock, M. Razeghi and M. Ulmer Proceedings, Vol. 7780, p. 77801P, SPIE Optics and Photonics Symposium, Conference on Detectors and Imaging Devices: Infrared, Focal Plane and Single Photon, San Diego, CA -- August 4, 2010 ...[Visit Journal] There is a need for semiconductor-based ultraviolet photodetectors to support avalanche gain in order to realize better performance andmore effective compete with existing technologies. Wide bandgap III-Nitride semiconductors are the promising material system for the development of avalanche photodiodes (APDs) that could be a viable alternative to current bulky UV detectors such as photomultiplier tubes. In this paper, we review the current state-of-the-art in IIINitride visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE. [reprint (PDF)]
1.	Gain-length scaling in quantum dot/quantum well infrared photodetectors T. Yamanaka, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi and M. Razeghi Virtual Journal of Nanoscale Science & Technology-- September 14, 2009 ...[Visit Journal][reprint (PDF)]
1.	GaN nanostructured p-i-n photodiodes J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi Applied Physics Letters, Vol. 93, No. 22, p. 221104-1-- December 1, 2008 ...[Visit Journal] We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ~200 nm diameter and 520 nm tall nanopillars on a 1 µm period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of 5 fA at −5 V. In contrast to conventional GaN diodes, nanostructured devices reproducibly show ideality factors lower than 2. Enhanced tunneling through sidewall surface states is proposed as the responsible mechanism for this behavior. Under backillumination, the quantum efficiency in nanostructured devices is partly limited by the collection efficiency of holes into the nanopillars. [reprint (PDF)]
1.	Electrically pumped photonic crystal distributed feedback quantum cascade lasers Y. Bai, P. Sung, S.R. Darvish, W. Zhang, A. Evans, S. Slivken, and M. Razeghi SPIE Conference, January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000A-1-8.-- February 1, 2008 ...[Visit Journal] We demonstrate electrically pumped, room temperature, single mode operation of photonic crystal distributed feedback (PCDFB) quantum cascade lasers emitting at ~ 4.75 µm. Ridge waveguides of 50 µm and 100 µm width were fabricated with both PCDFB and Fabry-Perot feedback mechanisms. The Fabry-Perot device has a broad emitting spectrum and a broad far-field character. The PCDFB devices have primarily a single spectral mode and a diffraction limited far field characteristic with a full angular width at half-maximum of 4.8 degrees and 2.4 degrees for the 50 µm and 100 µm ridge widths, respectively. [reprint (PDF)]
1.	Current status of high performance quantum cascade lasers at the center for quantum devices M. Razeghi; A. Evans; Y. Bai; J. Nguyen; S. Slivken; S.R. Darvish; K. Mi Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 588-593:[4266015] (2007)-- May 14, 2007 ...[Visit Journal] Mid-infrared laser sources are highly desired for laser-based trace chemical sensors, military countermeasures, free-space communications, as well as developing medical applications. While application development has been limited by the availability of adequate mid-infrared sources, InP-based quantum cascade lasers (QCLs) hold promise as inexpensive, miniature, portable solutions capable of producing high powers and operating at high temperatures with excellent beam quality and superior reliability. This paper discusses the most recent developments of application-ready high power (> 100 mW), continuous-wave (CW), mid-infrared QCLs operating above room temperature with lifetimes exceeding 13,000 hours. [reprint (PDF)]
1.	Quantum-dot infrared photodetectors and focal plane arrays M. Razeghi, H. Lim, S. Tsao, M. Taguchi, W. Zhang, and A.A. Quivy SPIE Infrared Technology and Applications Conference, April 17-21, 2006, Orlando, FL Proceedings – Infrared Technology and Applications XXXII, Vol. 6206, p. 62060I-1-- April 21, 2006 ...[Visit Journal] We report our recent results about mid-wavelength infrared quantum-dot infrared photodetectors (QDIPs) grown by low-pressure metalorganic chemical vapor deposition. A very high responsivity and a very low dark current were obtained. A high peak detectivity of the order of 3×10¹² Jones was achieved at 77 K. The temperature dependent device performance was also investigated. The improved temperature insensitivity compared to QWIPs was attributed to the properties of quantum dots. The device showed a background limited performance temperature of 220 K with a 45° field of view and 300K background. [reprint (PDF)]
1.	Infrared detection from GaInAs/InP nanopillar arrays A. Gin, B. Movaghar, M. Razeghi and G.J. Brown Nanotechnology 16-- July 1, 2005 ...[Visit Journal] We report on the photoresponse from large arrays of 40 nm radius nanopillars with sensitivity in the long-wavelength infrared regime. Using photoluminescence techniques, a peak wavelength blue shift of approximately 5 meV was observed at 30 K from GaInAs/InP nanopillar structures, indicating carrier confinement effects. Responsivity measurements at 30 K indicated peak wavelength response at about 8 µm with responsivity of 420 mA/W at −2 V bias. We have also measured the noise and estimated the peak detectivity to be 3×10⁸ cm·Hz^½·W⁻¹ at 1 V reverse bias and 30 K. A maximum internal quantum efficiency of 4.5% was derived from experiment. Both the photo and the dark transport have been successfully modeled as processes that involve direct and indirect field-assisted tunneling as well as thermionic emission. The best agreement with experiment was obtained when allowances were made for the non-uniformity of barrier widths and electric field heating of carriers above the lattice temperature. [reprint (PDF)]
1.	Very High Average Power at Room Temperature from λ ~ 5.9 μm Quantum Cascade Lasers J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi Applied Physics Letters, 82 (20)-- May 19, 2003 ...[Visit Journal] We report a very high average output power at room temperature for quantum-cascade lasers emitting at λ ~ 5.9 µm. For high-reflectivity-coated 2-mm-long cavities, a low threshold current density of 1.7 kA/cm² was obtained at room temperature. From 300 to 400 K, the characteristic temperature (T0) was 198 K. A maximum average output power of 0.67 W was achieved. In addition, 0.56 W average output power was observed at a duty cycle of 56%. [reprint (PDF)]
1.	High Power 0.98 μm GaInAs/GaAs/GaInP Multiple Quantum Well Laser K. Mobarhan, M. Razeghi, G. Marquebielle and E. Vassilaki Journal of Applied Physics 72 (9)-- November 1, 1992 ...[Visit Journal] We report the fabrication of high quality Ga_0.8In_0.2As/GaAs/Ga_0.51In_0.49P multiple quantum well laser emitting at 0.98 μm grown by low pressure metalorganic chemical vapor deposition. Continuous wave operation with output power of 500 mW per facet was achieved at room temperature for a broad area laser with 130 μm width and 300 μm cavity length. This is an unusually high value of output power for this wavelength laser in this material system. The differential quantum efficiency exceeded 75% with excellent homogeneity and uniformity. The characteristic temperature, T₀ was in the range of 120–130 K. [reprint (PDF)]
1.	AlGaN ultraviolet photoconductors grown on sapphire D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, and M. Razeghi Applied Physics Letters 68 (15)-- April 8, 1996 ...[Visit Journal] Al_xGa_1−xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00⋅1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage‐dependent responsivity is 0.13–0.36 ms. [reprint (PDF)]
1.	EPR investigation of Gd3+ and Eu2+ in the α- and β-phases of lead phosphate M. RAZEGHI, J. P. BUISSON, and B. HOULIE M. RAZEGHI et al.: EPR Investigation of Gd3+ and Eu2+ in Lead Phosphate phys. stat. sol. (b) 96, 283 (1979-- September 1, 1979 ...[Visit Journal] The X-band EPR spectra of Gd3+and Eu2+diluted in Pb3(P04)2crystals are studied. Lead phos-phate exhibits a ferroelastic phase transition a t 180 “C and the EPR spectra obtained in eachphase differ from each other. The spectra are very complex because the zero field splitting hasthe same order of magnitude as the Zeeman term. The spin Hamiltonian parameters and theenergy levels are computed. “Forbidden” or “missing” transitions and line intensities can beexplained. [reprint (PDF)]
1.	Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy C. Jelen, S. Slivken, X.G. He, and M. Razeghi and S. Shastry Journal of Vacuum Science and Technology B 12 (2)-- March 1, 1994 ...[Visit Journal] We report an analysis of the heteroepitaxial interfaces in high quality GaInP–GaAs superlattices grown simultaneously on GaAs and Si substrates by gas source molecular beam epitaxy. These two superlattices have been studied using high resolution x-ray diffraction measurements. Sharp superlattice satellites, with very little broadening, are observed within a 6° range for the sample on GaAs. Photoluminescence peaks with full widths at half-maximums of 5 and 7 meV are obtained at 4 K for samples with 58 Å wells on GaAs and Si, respectively. Room temperature exciton absorption is observed in the photovoltage measurements for a superlattice grown on Si substrate. The thicknesses determined by x-ray analysis are consistent with those obtained by a Kronig–Penny model fitting of the photovoltage spectroscopy. [reprint (PDF)]
1.	Modeling Type-II InAs/GaSb Superlattices Using Empirical Tight-Binding Method: New Aspects Y. Wei, M. Razeghi, G.J. Brown, and M.Z. Tidrow SPIE Conference, Jose, CA, Vol. 5359, pp. 301-- January 25, 2004 ...[Visit Journal] The recent advances in the experimental work on the Type-II InAs/GaSb superlattices necessitate a modeling that can handle arbitrary layer thickness as well as different types of interfaces in order to guide the superlattice design. The empirical tight-binding method (ETBM) is a very good candidate since it builds up the Hamiltonian atom by atom. There has been a lot of research work on the modeling of Type-II InAs/GaSb superlattices using the ETBM. However, different groups generate very different accuracy comparing with experimental results. We have recently identified two major aspects in the modeling: the antimony segregation and the interface effects. These two aspects turned out to be of crucial importance governing the superlattice properties, especially the bandgap. We build the superlattice Hamiltonian using antimony segregated atomic profile taking into account the interface. Our calculations agree with our experimental results within growth uncertainties. In addition we introduced the concept of Ga_xIn_1-x type interface engineering, which will add another design freedom especially in the mid-wavelength infrared range (3~7 µm) in orderto reduce the lattice mismatch. [reprint (PDF)]
1.	Long-term reliability of Al-free InGaAsP/GaAs λ = 808 nm) lasers at high-power high-temperature operation J. Diaz, H. Yi, M. Razeghi and G.T. Burnham Applied Physics Letters 71 (21)-- November 24, 1997 ...[Visit Journal] We report the long-term reliability measurement on uncoated Al-free InGaAsP/GaAs (λ = 808 nm) lasers at high-power and high-temperature operation. No degradation in laser performance has been observed for over 30 ,000 h of lifetime testing in any of randomly selected several 100 μm-wide uncoated lasers operated at 60 °C with 1 W continuous wave output power. This is the first and the most conclusive evidence ever reported that directly shows the high long-term reliability of uncoated Al-free lasers. [reprint (PDF)]
1.	High Power 3-12 μm Infrared Lasers: Recent Improvements and Future Trends M. Razeghi, S. Slivken, A. Tahraoui, A. Matlis, and Y.S. Park Physica E: Low-Dimensional Systems and Nanostructures 11 (2-3)-- October 1, 2001 ...[Visit Journal] In this paper, we discuss the progress of quantum cascade lasers (QCLs) grown by gas-source molecular beam epitaxy. Room temperature QCL operation has been reported for lasers emitting between 5-11 μm, with 9-11 μm lasers operating up to 425 K. Laser technology for the 3-5 μm range takes advantage of a strain-balanced active layer design. We also demonstrate record room temperature peak output powers at 9 and 11 μm (2.5 and 1 W, respectively) as well as record low 80K threshold current densities (250 A/cm²) for some laser designs. Preliminary distributed feedback (DFB) results are also presented and exhibit single mode operation for 9 μm lasers at room temperature. [reprint (PDF)]
1.	High-speed short wavelength infrared heterojunction phototransistors based on type II superlattices Jiakai Li; Arash Dehzangi; Donghai Wu; Manijeh Razeghi Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128813-- January 31, 2020 ...[Visit Journal] A two terminal short wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb on GaSb substrate are designed fabricated and presented. With the base thickness of 40 nm, the device exhibited 100% cut-off wavelengths of ~2.3 μm at 300K. The saturated peak responsivity value is of 325.5 A/W at 300K, under front-side illumination without any anti-reflection coating. A saturated optical gain at 300K was 215 a saturated dark current shot noise limited specific detectivity of 4.9×10¹¹ cm·Hz^½/W at 300 K was measured. Similar heterojunction phototransistor structure was grown and fabricated with different method of processing for high speed testing. For 80 μm diameter circular diode size under 20 V applied reverse bias, a −3 dB cut-off frequency of 1.0 GHz was achieved, which showed the potential of type-II superlattice based heterojunction phototransistors to be used for high speed detection. [reprint (PDF)]
1.	RT-CW: widely tunable semiconductor THz QCL sources M. Razeghi; Q. Y. Lu Proceedings Volume 9934, Terahertz Emitters, Receivers, and Applications -- September 26, 2016 ...[Visit Journal] Distinctive position of Terahertz (THz) frequencies (ν~0.3 -10 THz) in the electromagnetic spectrum with their lower quantum energy compared to IR and higher frequency compared to microwave range allows for many potential applications unique to them. Especially in the security side of the THz sensing applications, the distinct absorption spectra of explosives and related compounds in the range of 0.1–5 THz makes THz technology a competitive technique for detecting hidden explosives. A compact, high power, room temperature continuous wave terahertz source emitting in a wide frequency range will greatly boost the THz applications for the diagnosis and detection of explosives. Here we present a new strong-coupled strain-balanced quantum cascade laser design for efficient THz generation based intracavity DFG. Room temperature continuous wave operation with electrical frequency tuning range of 2.06-4.35 THz is demonstrated [reprint (PDF)]
1.	Energy harvesting from millimetric ZnO single wire piezo-generators Rogers, D. J.; Carroll, C.; Bove, P.; Sandana, V. E.; Goubert, L.; Largeteau, A.; Teherani, F. Hosseini; Demazeau, G.; McClintock, R.; Drouhin, H.-J.; Razeghi, M. Oxide-based Materials and Devices III. Edited by Teherani, Ferechteh H.; Look, David C.; Rogers, David J. Proceedings of the SPIE, Volume 8263, article id. 82631X, 7 pp. (2012).-- February 9, 2013 ...[Visit Journal] This work reports on investigations into the possibility of harvesting energy from the piezoelectric response of millimetric ZnO rods to movement. SEM & PL studies of hydrothermally grown ZnO rods revealed sizes ranging from 1 - 3 mm x 100 - 400 microns and suggested that each was a wurtzite monocrystal. Studies of current & voltage responses as a function of time during bending with a probe arm gave responses coherent with those reported elsewhere in the literature for ZnO nanowires or micro-rod single wire generators. The larger scale of these rods provided some advantages over such nano- and microstructures in terms of contacting ease, signal level & robustness. [reprint (PDF)]
1.	III-nitride based avalanche photo detectors R. McClintock, E. Cicek, Z. Vashaei, C. Bayram, M. Razeghi and M. Ulmer Proceedings, Vol. 7780, p. 77801B, SPIE Optics and Photonics Symposium, Conference on Detectors and Imaging Devices: Infrared, Focal Plane and Single Photon, San Diego, CA -- August 4, 2010 ...[Visit Journal] Research into III-Nitride based avalanche photodiodes (APDs) is motivated by the need for high sensitivity ultraviolet (UV) detectors in numerous civilian and military applications. By designing III-Nitride photodetectors that utilize low-noise impact ionization high internal gain can be realized-GaN APDs operating in Geiger mode can achieve gains exceeding 1×10⁷. Thus with careful design, it becomes possible to count photons at the single photon level. In this paper we review the current state of the art in III-Nitride visible-blind APDs and discuss the critical design choices necessary to achieve high performance Geiger mode devices. Other major technical issues associated with the realization of visible-blind Geiger mode APDs are also discussed in detail and future prospects for improving upon the performance of these devices are outlined. The photon detection efficiency, dark count rate, and spectral response of or most recent Geiger-mode GaN APDs on free-standing GaN substrates are studied under low photon fluxes, with single photon detection capabilities being demonstrated. We also present our latest results regarding linear mode gain uniformity: the study of gain uniformity helps reveal the spatial origins of gain so that we can better understand the role of defects. [reprint (PDF)]

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