Center for Quantum Devices - Most Downloaded Journal Articles

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11.	Thermal conductivity tensors of the cladding and active layers of antimonide infrared lasers and detectors Chuanle Zhou, I. Vurgaftman, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, J. R. Meyer, A. Hoang, A. Haddadi, M. Razeghi, and M. Grayson Optical Materials Express. 2013;3(10):1632-1640.-- October 1, 2013 ...[Visit Journal] The in-plane and cross-plane thermal conductivities of the cladding layers and active quantum wells of interband cascade lasers and type-II superlattice infrared detector are measured by the 2-wire 3ω method. The layers investigated include InAs/AlSb superlattice cladding layers, InAs/GaInSb/InAs/AlSb W-active quantum wells, an InAs/GaSb superlattice absorber, an InAs/GaSb/AlSb M-structure, and an AlAsSb digital alloy. The in-plane thermal conductivity of the InAs/AlSb superlattice is 4-5 times higher than the cross-plane value. The isotropic thermal conductivity of the AlAsSb digital alloy matches a theoretical expectation, but it is one order of magnitude lower than the only previously-reported experimental value. [reprint (PDF)]
11.	High-power, continuous-operation intersubband laser for wavelengths greater than 10 micron S. Slivken, A. Evans, W. Zhang and M. Razeghi Applied Physics Letters, Vol. 90, No. 15, p. 151115-1-- April 9, 2007 ...[Visit Journal] In this letter, high-power continuous-wave emission (>100 mW) and high temperature operation (358 K) at a wavelength of 10.6 µm is demonstrated using an individual diode laser. This wavelength is advantageous for many medium-power applications previously reserved for the carbon dioxide laser. Improved performance was accomplished using industry-standard InP-based materials and by careful attention to design, growth, and fabrication limitations specific to long-wave infrared semiconductor lasers. The main problem areas are explored with regard to laser performance, and general steps are outlined to minimize their impact. [reprint (PDF)]
11.	AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn Ilkay Demir, Yusuf Koçak, A. Emre Kasapoğlu, Manijeh Razeghi, Emre Gür and Sezai Elagoz Semicond. Sci. Technol. 34 075028-- June 24, 2019 ...[Visit Journal] We report a new growth approach pulsed co-doping growth of Al_xGa_1−xN (x > 0.5) epilayers on AlN/Al₂O₃ templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH₄ (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution x-ray diffraction (HR-XRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed co-doping growth approach. Volcano like hillock structures has been confirmed by Raman mapping. [reprint (PDF)]
11.	LEO of III-Nitride on Al₂O₃ and Si Substrates M. Razeghi, P. Kung, P. Sandvik, K. Mi, X. Zhang, V.P. Dravid, J. Freitas, and A. Saxler SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] Lateral epitaxial overgrowth (LEO) has recently become the method of choice to reduce the density of dislocations in heteroepitaxial GaN thin films, and is thus expected to lead to enhanced performance devices. We present here the LEO growth and characterization of GaN films by low pressure metalorganic chemical vapor deposition. Various substrates were used, including basal plane sapphire and oriented Si substrates. The steps in the LEO growth technology will be briefly reviewed. The characterization results will be discussed in detail. The structural, electrical and optical properties of the films were assessed through scanning, atomic and transmission electron microscopy, x-ray diffraction, capacitance-voltage, deep level transient spectroscopy, photoluminescence, and scanning cathodoluminenscence measurements. Single-step and double- step LEO GaN was achieved on sapphire. Similarly high quality LEO grown GaN films were obtained on sapphire and silicon substrates. Clear and dramatic reduction in the density of defects are observed in LEO grown materials using the various characterization techniques mentioned previously. [reprint (PDF)]
11.	High-power InGaAsP/GaAs 0.8 μm laser diodes and peculiarities of operational characteristics J. Diaz, I. Eliashevich, X. He, H. Yi, L. Wang, E. Kolev, D. Garbuzov, and M. Razeghi Applied Physics Letters 65 (8)-- August 22, 1994 ...[Visit Journal] High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100 μm aperture has been demonstrated for 1 mm long cavity InGaAsP/GaAs 808 nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm², differential efficiency of 1.1 W/A, T₀=155 °C, transverse beam divergence of 27°, and less than 2 nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime. [reprint (PDF)]
11.	Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP K.‐H. Goetz; D. Bimberg; K.‐A. Brauchle; H. Jürgensen; J. Selders; M. Razeghi; E. Kuphal K.‐H. Goetz, D. Bimberg, K.‐A. Brauchle, H. Jürgensen, J. Selders, M. Razeghi, E. Kuphal; Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP. Appl. Phys. Lett. 1 February 1985; 46-- February 1, 1985 ...[Visit Journal] Two deep traps in Ga0.47In0.53As/InP:Fe at a depth of 110 meV and 150 meV, respectively, are observed for the first time using low‐temperature photoluminescence and deep level transient spectroscopy. The dependence of luminescence intensity on the growth process itself (liquid phase epitaxy, vapor phase epitaxy, and metalorganic chemical vapor deposition) and its parameters (growth temperature, layer thickness) and the substrate doping is reported and leads to the unambigous identification of the 150‐meV acceptorlike trap as being caused by Fe impurities. Fe diffuses from the substrate to the epitaxial layer during the growth process. This outdiffusion is less pronounced for layers grown at lower temperature. The level at 110 meV which is also observed in layers grown on InP:S substrate is tentatively assigned to an intrinsic defect of Ga0.47In0.53As. [reprint (PDF)]
11.	Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices A.M. Hoang, G. Chen, A. Haddadi, S. Abdollahi Pour, and M. Razeghi Applied Physics Letters, Vol. 100, No. 21, p. 211101-1-- May 21, 2012 ...[Visit Journal] We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes operating at the short wavelength infrared regime below 3 μm. An n-i-p type-II InAs/GaSb/AlSb photodiode was grown with a designed cut-off wavelength of 2 μm on a GaSb substrate. At 150 K, the photodiode exhibited a dark current density of 5.6 × 10⁻⁸ A/cm² and a front-side-illuminated quantum efficiency of 40.3%, providing an associated shot noise detectivity of 1.0 × 10¹³ Jones. The uncooled photodiode showed a dark current density of 2.2 × 10⁻³ A/cm² and a quantum efficiency of 41.5%, resulting in a detectivity of 1.7 × 10¹⁰ Jones [reprint (PDF)]
11.	Delta-doping optimization for high qualityp-type GaN C. Bayram, J.L. Pau, R. McClintock and M. Razeghi Journal of Applied Physics, Vol. 104, No. 8-- October 15, 2008 ...[Visit Journal] Delta-doping is studied in order to achieve high quality p-type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the delta-doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different delta-doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 10¹⁸ cm⁻³ and superior crystal quality compared to conventional p-GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in delta-doped p-GaN. [reprint (PDF)]
11.	Improved performance of quantum cascade lasers via manufacturable quality epitaxial side down mounting process utilizing aluminum nitride heatsinks A. Tsekoun, R. Go, M. Pushkarsky, M. Razeghi, C.K.N. Patel SPIE Conference, San Jose, CA, Vol. 6127, pp. 612702-- January 23, 2006 ...[Visit Journal] We report substantially improved performance of high power quantum cascade lasers by utilizing epi-side down mounting that provides superior heat dissipation properties. We have obtained CW power output of 450 mW at 20°C from mid-IR QCLs. The improved thermal management achieved with epi-side down mounting has also permitted us to carry out initial lifetime tests on the mid-IR QCLs. No degradation of power output is seen even after over 300 hours of CW operation at 25°C with power output in excess of 300 mW. We believe these improvements should permit incorporation of mid-IR QCLs in reliable instrumentation. [reprint (PDF)]
11.	High Performance Type-II InAs/GaSb Superlattice Photodiodes H. Mohseni, Y. Wei, and M. Razeghi SPIE Conference, San Jose, CA, -- January 22, 2001 ...[Visit Journal] We report on the demonstration of high performance p-i-n photodiodes based on Type-II InAs/GaSb superlattices operating in the very long wavelength infrared (VLWIR) range at 80 K. Material is grown by molecular beam epitaxy on GaSb substrates with excellent crystal quality as evidenced by x-ray diffraction and atomic force microscopy. The processed devices with a 50% cutoff wavelength of λ_c equals 22 μm show a peak current responsivity about 5.5 A/W at 80 K. The use of binary layers in the superlattice has significantly enhanced the uniformity and reproducibility of the energy gap. The 90% to 10% cut-off energy width of these devices is on the order of 2 kT which is about four times smaller compared to the devices based on InAs/Ga1-xInxSb superlattices. Similar photovoltaic devices with cut-off wavelengths up to 25 μm have been measured at 80 K. Our experimental results shows excellent uniformity over a three inch wafer area, indicating the possibility of VLWIR focal plane arrays based on Type-II superlattices. [reprint (PDF)]
11.	Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques M. Wraback, H. Shen, P. Kung, M. Razeghi, J.C. Carrano, T. Li, and J.C. Campbell SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] Femtosecond nonlinear optical techniques have been employed in the study of carrier dynamics and transport in UV detector materials. Visible femtosecond pulses derived from the signal beam of a 250 kHz regenerative amplifier-pumped optical parametric amplifier were frequency doubled to obtain pulses tunable from 250 nm to 375 nm. Time-resolved reflectivity experiments indicate that the room-temperature carrier lifetime in GaN grown by double lateral epitaxial overgrowth is about 3 times longer than that of GaN grown on sapphire without benefit of this technique. The electron velocity-field characteristics and saturation velocity in GaN have been obtained form time-resolved studies of electroabsorption in a GaN p-i-n diode. The peak steady- state velocity of 1.9x10⁷ cm/s in this device occurs at 225 kV/cm. Time-resolved transmission measurements have been used to monitor ultrafast carrier relaxation phenomena in a thin AlGaN layer with bandgap in the solar blind region of the spectrum. Excitation intensity and wavelength dependent studies of the photoinduced bleaching decays suggest that they are primarily governed by trapping in a high density of sub-bandgap defect levels. [reprint (PDF)]
11.	Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface R.J Nicholas a, M.A Brummell a , J.C Portal b, M Razeghi c, M.A Poisson R.J Nicholas, M.A Brummell, J.C Portal, M Razeghi, M.A Poisson, Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface, Solid State Communications, Volume 43, Issue 11, 1982, Pages 825-828,-- September 1, 1982 ...[Visit Journal] We report the observation of a two dimensional gas of high mobility electrons at the interface of a Ga0.47In0.53AsInP heterojunction grown by MOCVD. The two dimensional electron concentrations and effective mass are determined by Shubnikov-de Haas studies, and compared with theoretical predictions. Evidence of an enhancement of the g-factor is observed. We also report observations of very pronounced quantum Hall steps as seen in GaAs-GaAlAs heterojunctions. [reprint (PDF)]
11.	Highly temperature insensitive quantum cascade lasers Y. Bai, N. Bandyopadhyay, S. Tsao, E. Selcuk, S. Slivken and M. Razeghi Applied Physics Letters, Vol. 97, No. 25-- December 20, 2010 ...[Visit Journal] An InP based quantum cascade laser (QCL) heterostructure emitting around 5 μm is grown with gas-source molecular beam epitaxy. The QCL core design takes a shallow-well approach to maximize the characteristic temperatures, T(0) and T(1), for operations above room temperature. A T(0) value of 383 K and a T(1) value of 645 K are obtained within a temperature range of 298–373 K. In room temperature continuous wave operation, this design gives a single facet output power of 3 W and a wall plug efficiency of 16% from a device with a cavity length of 5 mm and a ridge width of 8 μm. [reprint (PDF)]
11.	The correlation between x-ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices X.G. He, M. Erdtmann, R. Williams, S. Kim, and M. Razeghi Applied Physics Letters 65 (22)-- November 28, 1994 ...[Visit Journal] Strong correlation between x‐ray diffraction characteristics and strain distribution inside GaInP/GaAs superlattices has been reported. It is found that the symmetry of (002) diffraction patterns can be used to evaluate the interface strain status. A sample with no interfacial strains has a symmetric (002) diffraction pattern and weak (004) diffraction pattern. It is also demonstrated that strain distribution in superlattices can be readily estimated qualitatively by analyzing x-ray diffraction patterns. [reprint (PDF)]
11.	Single-mode, high-power, midinfrared, quantum cascade laser phased arrays Wenjia Zhou , Donghai Wu , Quan-Yong Lu, Steven Slivken & Manijeh Razeghi Scientific Reports 8:14866-- October 5, 2018 ...[Visit Journal] We demonstrate single-mode, 16-channel, optical phased arrays based on quantum cascade laser technology, with emission wavelengths around 4.8 μm. The integrated device consists of a distributed feedback seed section, a highly-efficient tree array multi-mode interferometer power splitter, and a 16-channel amplifier array with a 4° angled facet termination. With a single layer Y₂O₃ coating, the angled facet reflectivity is estimated to be less than 0.1% for suppressing amplifier self-lasing. A peak output power of 30 W is achieved with an emission spectrum narrower than 11 nm and a side mode suppression ratio over 25 dB. Far field distribution measurement result indicates a uniform phase distribution across the array output. Using the same phased array architecture, we also demonstrate single-mode 3.8 μm QCL amplifier arrays with up to 20 W output power. [reprint (PDF)]
11.	Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP M. A. di Forte‐Poisson; M. Razeghi; J. P. Duchemin M. A. di Forte‐Poisson, M. Razeghi, J. P. Duchemin; Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP. J. Appl. Phys. 1 December 1983; 54 (12): 7187–7189. https://doi.org/10.1063/1.331956-- December 1, 1983 ...[Visit Journal] In1−x Alx As epitaxial layers were grown on (100) InP substrates by the organometallic vapor phase epitaxy method. Undoped layers with mirror smooth surfaces were obtained for substrate temperatures of 600–650 °C. By adjusting the relative ratio of In and Al, lattice matched In0.52 Al0.48 As epilayers were reproducibly grown on InP substrates. X‐ray measurements, scanning Auger analyses, and electron mobilities are presented. These results show that the quality of the epilayers obtained here was comparable to the best reported layers grown by other methods. [reprint (PDF)]
11.	AlGaN-based deep UV light emitting diodes with peak emission below 255 nm A. Yasan, R. McClintock, K. Mayes, P. Kung, and M. Razeghi SPIE Conference, Jose, CA, Vol. 5732, pp. 197-- January 22, 2005 ...[Visit Journal] We report on the growth and fabrication of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with peak emission of below 255 nm. In order to achieve such short wavelength UV LEDs, the Al mole fractions in the device layers should be greater than ~60%. This introdues serious challenges on the growth and doping of Al_xGa_1-xN epilayers. However, with the aid of a high-quality AlN template layer and refinement of the growth conditions we have been able to demonstrate UV LEDs emitting below 255 nm. [reprint (PDF)]
11.	Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer Akhil Rajan, David J Rogers, Cuong Ton-That, Liangchen Zhu, Matthew R Phillips, Suresh Sundaram, Simon Gautier, Tarik Moudakir, Youssef El-Gmili, Abdallah Ougazzaden, Vinod E Sandana, Ferechteh H Teherani, Philippe Bove, Kevin A Prior, Zakaria Djebbour, Ryan McClintock and Manijeh Razeghi Journal of Physics D: Applied Physics, Volume 49, Number 31 -- July 15, 2016 ...[Visit Journal] Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift-off (ELO) process by supporting the wax host with a glass substrate proved key in enabling full wafer scale-up. Scanning electron microscopy and x-ray diffraction confirmed that intact epitaxial GaN had been transferred to the glass host. Depth-resolved cathodoluminescence (CL) analysis of the bottom surface of the lifted-off GaN layer revealed strong near-band-edge (3.33 eV) emission indicating a superior optical quality for the GaN which was lifted off the GaN substrate. This modified ELO approach demonstrates that previous theories proposing that wax host curling was necessary to keep the ELO etch channel open do not apply to the GaN/ZnO system. The unprecedented full wafer transfer of epitaxial GaN to an alternative support by ELO offers the perspective of accelerating industrial adoption of the expensive GaN substrate through cost-reducing recycling. [reprint (PDF)]
11.	Growth of GaInAs‐InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition M. Razeghi; P‐L. Meunier; P. Maurel M. Razeghi, P‐L. Meunier, P. Maurel; Growth of GaInAs‐InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition. J. Appl. Phys. 15 March 1986; 59 (6): 2261–2263-- March 15, 1986 ...[Visit Journal] Ga0.47In0.53As‐InP multiquantum wells grown by low‐pressure metalorganic chemical vapor deposition on garnet (GGG=Gd3Ga5O12 with a=12.383 Å) substrates are presented for the first time. The x‐ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers. [reprint (PDF)]
11.	High Thermal Stability of κ-Ga2O3 Grown by MOCVD Junhee Lee, Honghyuk Kim, Lakshay Gautam and Manijeh Razeghi Lee, J.; Kim, H.; Gautam, L.; Razeghi, M. High Thermal Stability of κ-Ga2O3 Grown by MOCVD. Crystals 2021, 11, 446. https://doi.org/ 10.3390/cryst11040446 ...[Visit Journal] We report a high thermal stability of kappa gallium oxide grown on c-plane sapphire substrate by metal organic chemical vapor deposition. Kappa gallium oxide is widely known as a metastable polymorph transitioning its phase when subjected to a high temperature. Here, we show the kappa gallium oxide whose phase is stable in a high temperature annealing process at 1000 °C. These oxide films were grown at 690 °C under nitrogen carrier gas. The materials showed high electrical resistivity when doped with silicon, whereas the film conductivity was significantly improved when doped with both indium and silicon. This work provides a pathway to overcoming limitations for the advance in utilizing kappa gallium oxide possessing superior electrical characteristics. [reprint (PDF)]
11.	Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays E.K. Huang, B.M. Nguyen, D. Hoffman, P.Y. Delaunay and M. Razeghi SPIE Proceedings, San Jose, CA Volume 7222-0Z-- January 26, 2009 ...[Visit Journal] A challenge for Type-II InAs/GaSb superlattice (T2SL) photodetectors is to achieve high fill factor, high aspect ratio etching for third generation focal plane arrays (FPAs). Initially, we compare the morphological and electrical results of single element T2SL photodiodes after BCl₃/Ar inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching. Using a Si₃N₄ hard mask, ICP-etched structures exemplify greater sidewall verticality and smoothness, which are essential toward the realization of high fill factor FPAs. ICP-etched single element devices with SiO₂ passivation that are 9.3 µm in cutoff wavelength achieved vertical sidewalls of 7.7 µm in depth with a resistance area product at zero bias of greater than 1,000 Ω·cm² and maximum differential resistance in excess of 10,000 Ω·cm² at 77 K. By only modifying the etching technique in the fabrication steps, the ICP-etched photodiodes showed an order of magnitude decrease in their dark current densities in comparison to the ECR-etched devices. Finally, high aspect ratio etching is demonstrated on mutli-element arrays with 3 µm-wide trenches that are 11 µm deep. [reprint (PDF)]
11.	Effect of the spin split-off band on optical absorption in p-type Ga1 xInxAsyP1-y quantum-well infrared detectors J.R. Hoff, M. Razeghi and G. Brown Physical Review B 54 (15)-- October 15, 1996 ...[Visit Journal] Experimental investigations of p-type Ga_1-xIn_xAs_yP_1-y quantum-well intersubband photodetectors (QWIP’s) led to the discovery of unique features in photoresponse spectra of these devices. In particular, the strong 2–5 μm photoresponse of these QWIP’s was not anticipated based on previous experimental and theoretical results for p-type GaAs/Al_xGa_1-xAs QWIP’s. Our theoretical modeling of p-type QWIP’s based on the Ga_1-xIn_xAs_yP_1-y system revealed that the intense short-wavelength photoresponse was due to a much stronger coupling to the spin-orbit split-off components in the continuum than occurs for GaAs/Al_xGa_1-xAs QWIP’s. Due to the strong influence of the spin split-off band, an eight-band Kane Hamiltonian was required to accurately model the measured photoresponse spectra. This theoretical model is first applied to a standard p-type GaAs/Al_0.3Ga_0.7As QWIP, and then to a series of GaAs/Ga_0.51In_0.49P, GaAs/Ga_0.62In_0.38As_0.22P_0.78, Ga_0.79In_0.21As_0.59P_0.41/Ga_0.51In_0.49P, and Ga_0.79In_0.21As_0.59P_0.41/Ga_0.62In_0.38As_0.22P_0.78 QWIP’s. Through this analysis, the insignificance of spin split-off absorption in GaAs/Al_xGa_1-xAs QWIP’s is verified, as is the dual role of light-hole extended-state and spin split-off hole-extended-state absorption on the spectral shape of Ga_1-xIn_xAs_yP_1-y QWIP’s. [reprint (PDF)]
11.	High Detectivity InAs Quantum-Dot Infrared Photodetectors Grown on InP by Metalorganic Chemical Vapor Deposition W. Zhang, H. Lim, M. Taguchi, S. Tsao, B. Movaghar, and M. Razeghi Applied Physics Letters, 86 (19)-- May 9, 2005 ...[Visit Journal] We report a high-detectivity InAs quantum-dot infrared photodetector. The InAs quantum dots were grown by self-assembly on InP substrates via low-pressure metal–organic chemical–vapor deposition. Highly uniform quantum dots with a density of 4×10¹⁰ cm² were grown on a GaAs/InP matrix. Photoresponse was observed at temperatures up to 160 K with a peak of 6.4 µm and cutoff of 6.6 µm. Very low dark currents and noise currents were obtained by inserting Al_0.48In_0.52As current blocking layers. The background-limited performance temperature was 100 K. A detectivity of 1.0×10¹⁰ cm·Hz^½/W was obtained at 77 K with a bias of –1.1 V. [reprint (PDF)]
11.	World's first demonstration of type-II superlattice dual band 640 x 512 LWIR focal plane array E.K. Huang and M. Razeghi SPIE Proceedings, Vol. 8268, p. 82680Z-- January 22, 2012 ...[Visit Journal] High resolution multi-band infrared detection of terrestrial objects is useful in applications such as long range and high altitude surveillance. In this paper, we present a 640 x 512 type-II superlattice focal plane array (FPA) in the long-wave infrared (LWIR) suitable for such purposes, featuring 100% cutoff wavelengths at 9.5 μm (blue channel) and 13 μm (red). The dual band camera is single-bump hybridized to an Indigo 30 μm pitch ISC0905 read-out integrated circuit. Test pixels revealed background limited behavior with specific detectivities as high as ~5x10¹¹ Jones at 7.9 μm (blue) and ~1x10¹¹ Jones at 10.2 μm (red) at 77K. [reprint (PDF)]
11.	Ultraviolet avalanche photodiodes Ryan McClintock ; Manijeh Razeghi Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550B -- August 28, 2015 ...[Visit Journal] The III-Nitride material system is rapidly maturing; having proved itself as a material for LEDs and laser, and now finding use in the area of UV photodetectors. However, many UV applications are still dominated by the use of photomultiplier tubes (PMT). PMTs are capable of obtaining very high sensitivity using internal electron multiplication gain (typically ~106). It is highly desirable to develop a compact semiconductor-based photodetector capable of realizing this level of sensitivity. In principle, this can be obtained in III-Nitrides by taking advantage of avalanche multiplication under high electric fields – typically 2.7 MV/cm, which with proper design can correspond to an external reverse bias of less than 100 volts. In this talk, we review the current state-of-the-art in III-Nitride solar- and visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE. [reprint (PDF)]

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