Center for Quantum Devices - Most Downloaded Journal Articles

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13.	Temperature dependent characteristics of λ ~ 3.8 µm room-temperature continuous-wave quantum-cascade lasers J.S. Yu, A. Evans, S. Slivken, S.R. Darvish and M. Razeghi Applied Physics Letters, 88 (25)-- June 19, 2006 ...[Visit Journal] The highest-performance device displays pulsed laser action at wavelengths between 3.4 and 3.6 μm, for temperatures up to 300 K, with a low temperature (80 K) threshold current density of approximately 2.6 kA/cm², and a characteristic temperature of T₀~130 K. The shortest wavelength QCL (λ ~ 3.05 μm) has a higher threshold current density (~12 kA/cm² at T=20 K) and operates in pulsed mode at temperatures up to 110 K. [reprint (PDF)]
13.	Well Resolved Room Temperature Photovoltage Spectra of GaAs-GaInP Quantum Wells and Superlattices Xiaoguang He and Manijeh Razeghi Applied Physics Letters 62 (6)-- February 8, 1993 ...[Visit Journal] We report the first well resolved room‐temperature photovoltage spectra due to the sublevel transitions in the GaInP‐GaAs superlattices and multiquantum wells grown by low pressure metalorganic chemical vapor deposition. Sharp well resolved peaks attributed to exciton absorption of the electron‐to‐light hole and electron‐to‐heavy hole have been observed at room temperature. This indicates that GaAs‐GaInP is a promising material for the application of the modulators, optical switches, and optical bistable divices. Satisfactory agreements between experimental measurements and theoretical results have been obtained. These results demonstrate that photovoltage spectroscopy is a simple, but very powerful tool to study quantum confinement structures. [reprint (PDF)]
13.	Electroluminescence at 375 nm from a Zn0/GaN:Mg/c-Al₂O₃ heterojunction light emitting diodes D.J. Rogers, F.Hosseini Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi Applied Physics Letters, 88 (14)-- April 13, 2006 ...[Visit Journal] n-ZnO/p-GaN:Mg heterojunction light emitting diode (LED) mesas were fabricated on c-Al₂O₃ substrates using pulsed laser deposition for the ZnO and metal organic chemical vapor deposition for the GaN:Mg. Room temperature (RT) photoluminescence (PL) showed an intense main peak at 375 nm and a negligibly low green emission indicative of a near band edge excitonic emission from a ZnO layer with low dislocation/defect density. The LEDs showed I-V characteristics confirming a rectifying diode behavior and a RT electroluminescence (EL) peaked at about 375 nm. [reprint (PDF)]
13.	Very High Average Power at Room Temperature from λ ~ 5.9 μm Quantum Cascade Lasers J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi Applied Physics Letters, 82 (20)-- May 19, 2003 ...[Visit Journal] We report a very high average output power at room temperature for quantum-cascade lasers emitting at λ ~ 5.9 µm. For high-reflectivity-coated 2-mm-long cavities, a low threshold current density of 1.7 kA/cm² was obtained at room temperature. From 300 to 400 K, the characteristic temperature (T0) was 198 K. A maximum average output power of 0.67 W was achieved. In addition, 0.56 W average output power was observed at a duty cycle of 56%. [reprint (PDF)]
13.	Stability of far fields in double heterostructure and multiple quantum well InAsSb/InPAsSb/InAs midinfrared lasers H. Yi, A. Rybaltowski, J. Diaz, D. Wu, B. Lane, Y. Xiao, and M. Razeghi Applied Physics Letters 70 (24)-- June 16, 1997 ...[Visit Journal] Far fields in perpendicular direction to the junction are investigated in double heterostructure (DH) and multiple quantum well (MQW) midwave-infrared InAsSb/InPAsSb/InAs lasers (λ = 3.2–3.6 μm). Strong broadening of the far fields in the DH lasers was observed with increases in temperature and/or current. On the contrary, MQW lasers with otherwise identical structure exhibit very stable far fields as narrow as 23° for all the operating conditions investigated. Our experiment and theoretical modeling suggest that these different behaviors of far fields in DH and MQW lasers are attributed to the refractive index fluctuation in the InAsSb laser active region. [reprint (PDF)]
13.	High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices P. Manurkar, S.R. Darvish, B.M. Nguyen, M. Razeghi and J. Hubbs Applied Physics Letters, Vol. 97, No 19, p. 193505-1-- November 8, 2010 ...[Visit Journal] A large format 1k × 1k focal plane array (FPA) is realized using type-II superlattice photodiodes for long wavelength infrared detection. Material growth on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 11 μm across the entire wafer. The FPA shows excellent imaging. Noise equivalent temperature differences of 23.6 mK at 81 K and 22.5 mK at 68 K are achieved with an integration time of 0.13 ms, a 300 K background and f/4 optics. We report a dark current density of 3.3×10⁻⁴ A·cm⁻² and differential resistance-area product at zero bias R₀A of 166 Ω·cm² at 81 K, and 5.1×10⁻⁵ A·cm⁻² and 1286 Ω·cm², respectively, at 68 K. The quantum efficiency obtained is 78%. [reprint (PDF)]
13.	Recent advances in III-Nitride materials, characterization and device applications M. Razeghi, X. Zhang, P. Kung, A. Saxler, D. Walker, K.Y. Lim, and K.S. Kim SPIE Conference: Solid State Crystals in Optoelectronics and Semiconductor Technology; Proceedings 3179-- October 7, 1996 ...[Visit Journal] High-quality AlN, GaN, AlGaN have been grown on sapphire substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The x-ray rocking curve of AlN and GaN were 100 arcsecs and 30 arcsecs respectively with Pendelloesung oscillations, which are the best reported to date. GaN with high crystallinity simultaneously exhibited high optical and electrical quality. Photoluminescence linewidth of GaN at 77K was as low as 17 meV, which is the best reported to date. Si-doped GaN had a mobility higher than 300 cm²/V·s. GaN has been also successfully grown on LiGaO₂ substrate with LP-MOCVD for the first time. AlGaN for the entire composition range has been grown. These layers exhibited the lowest x-ray FWHM reported to date. The excellent optical quality of these layers have been characterized by room temperature UV transmission and photoluminescence. N-type doping of AlGaN with Si has ben achieved up to 60 percent Al with mobility as high as 78 cm²/V·s. Al_xGa_1-xN/Al_yGa_1-yN superlattice with atomically sharp interface have been demonstrated. Optically-pumped stimulated emission in GaN:Ge and GaN:Si has been observed with threshold optical power density as low as 0.4 MW/cm². AlGaN photoconductors with cut-off wavelengths from 200 nm to 365 nm have been achieved for the first time. GaN p-n junction photovoltaic detector with very selective photoresponse have been demonstrated and theoretically modeled. Ti/AlN/Si metal-insulator- semiconductor capacitor with high capacitance-voltage performances at both low and high frequencies and low interface trap level density have been demonstrated for the first time in this material system. [reprint (PDF)]
13.	Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, and M. Razeghi Virtual Journal of Nanoscale Science & Technology, 5-- August 5, 2002 ...[Visit Journal][reprint (PDF)]
13.	Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition C. Bayram, N. Pere-Laperne, and M. Razeghi Applied Physics Letters, Vol. 95, No. 20, p. 201906-1-- November 16, 2009 ...[Visit Journal] AlN/GaN superlattices (SLs) employing various well widths (from 1.5 to 7.0 nm) are grown by metal-organic chemical vapor deposition technique at various growth temperatures (Ts) (from 900 to 1035 °C). The photoluminescence (PL), x-ray diffraction, and intersubband (ISB) absorption characteristics of these SLs and their dependency on well width and growth temperature are investigated. Superlattices with thinner wells (grown at the same Ts) or grown at lower Ts (employing the same well width) are shown to demonstrate higher strain effects leading to a higher PL energy and ISB absorption energy. Simulations are employed to explain the experimental observations. ISB absorptions from 1.04 to 2.15 µm are demonstrated via controlling well width and growth temperature. [reprint (PDF)]
13.	High quality LEO growth and characterization of GaN films on Al₂O₃ and Si substrates M. Razeghi, P. Kung, D. Walker, M. Hamilton, and J. Diaz SPIE International Conference on Solid State Crystals, Zakopane, Poland; Proceedings 3725-- October 12, 1998 ...[Visit Journal] We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al₂O₃ and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates. [reprint (PDF)]
12.	GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition P. Kung, A. Saxler, D. Walker, A. Rybaltowski, X. Zhang, J. Diaz, and M. Razeghi MRS Internet Journal of Nitride Semiconductor Research 3 (1)-- January 1, 1998 ...[Visit Journal] We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 µm long cavity length laser was 1.4 kA/cm² with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively. [reprint (PDF)]
12.	High-power mid- and far- wavelength infrared lasers for free space communication M. Razeghi; A. Evans; J. Nguyen; Y. Bai; S. Slivken; S.R. Darvish; K. Mi Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 65931V (June 12, 2007)-- June 12, 2007 ...[Visit Journal] Laser-based free-space communications have been developed to serve specific roles in "last mile" high-speed data networks due to their high security, low cost, portability, and high bandwidth. Conventional free-space systems based on near infrared optical devices suffer from reliability problems due to atmospheric scattering losses and scintillation effects, such as those encountered with storms, dust, and fog. Mid-infrared wavelengths are less affected by atmospheric effects and can significantly enhance link up-time and range. This paper will discuss some of the recent advances in high-power, high temperature, high reliability mid-infrared Quantum Cascade Lasers and their potential application in highly reliable free space communication links. [reprint (PDF)]
12.	Transport and photodetection in self-assembled semiconductor quantum dots M Razeghi, H Lim, S Tsao, J Szafraniec, W Zhang, K Mi and B Movaghar Nanotechnology 16 219-- January 7, 2005 ...[Visit Journal] A great step forward in science and technology was made when it was discovered that lattice mismatch can be used to grow highly ordered, artificial atom-like structures called self-assembled quantum dots. Several groups have in the meantime successfully demonstrated useful infrared photodetection devices which are based on this technology. The new physics is fascinating, and there is no doubt that many new applications will be found when we have developed a better understanding of the underlying physical processes, and in particular when we have learned how to integrate the exciting new developments made in nanoscopic addressing and molecular self-assembly methods with semiconducting dots. In this paper we examine the scientific and technical questions encountered in current state of the art infrared detector technology and suggest ways of overcoming these difficulties. Promoting simple physical pictures, we focus in particular on the problem of high temperature detector operation and discuss the origin of dark current, noise, and photoresponse. [reprint (PDF)]
12.	Growth and Characterization of Type-II Non-Equilibrium Photovoltaic Detectors for Long Wavelength Infrared Range H. Mohseni, J. Wojkowski, A. Tahraoui, M. Razeghi, G. Brown and W. Mitche SPIE Conference, San Jose, CA, -- January 26, 2000 ...[Visit Journal] Growth and characterization of type-II detectors for mid-IR wavelength range is presented. The device has a p-i-n structure is designed to operate in the non-equilibrium mode with low tunneling current. The active layer is a short period InAs/GaSb superlattice. Wider bandgap p-type AlSb and n-type InAs layers are used to facilitate the extraction of both electronics and holes from the active layer for the first time. The performance of these devices were compared to the performance of devices grown at the same condition, but without the AlSb barrier layers. The processed devices with the AlSb barrier show a peak responsivity of about 1.2 A/W with Johnson noise limited detectivity of 1.1 X 10¹¹ cm·Hz^½/W at 8 μm at 80 K at zero bias. The details of the modeling, growth, and characterizations will be presented. [reprint (PDF)]
12.	Deep ultraviolet (254 nm) focal plane array E. Cicek, Z. Vashaei, R. McClintock, and M. Razeghi SPIE Proceedings, Conference on Infrared Sensors, Devices and Applications; and Single Photon Imaging II, Vol. 8155, p. 81551O-1-- August 21, 2011 ...[Visit Journal] We report the synthesis, fabrication and testing of a 320 × 256 focal plane array (FPA) of back-illuminated, solarblind, p-i-n, Al_xGa_1-xN-based detectors, fully realized within our research laboratory. We implemented a novel pulsed atomic layer deposition technique for the metalorganic chemical vapor deposition (MOCVD) growth of crackfree, thick, and high Al composition Al_xGa_1-xN layers. Following the growth, the wafer was processed into a 320 × 256 array of 25 μm × 25 μm pixels on a 30 μm pixel-pitch and surrounding mini-arrays. A diagnostic mini-array was hybridized to a silicon fan-out chip to allow the study of electrical and optical characteristics of discrete pixels of the FPA. At a reverse bias of 1 V, an average photodetector exhibited a low dark current density of 1.12×10^-8 A·cm^-2. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower and falling off three orders of magnitude by 285 nm. After indium bump deposition and dicing, the FPA is hybridized to a matching ISC 9809 readout integrated circuit (ROIC). By developing a novel masking technology, we significantly reduced the visible response of the ROIC and thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allowed the FPA to achieve high external quantum efficiency (EQE): at 254 nm, average pixels showed unbiased peak responsivity of 75 mA/W, which corresponds to an EQE of ~37%. Finally, the uniformity of the FPA and imaging properties are investigated. [reprint (PDF)]
12.	Type-II superlattice photodetectors for MWIR to VLWIR focal plane arrays M. Razeghi, Y. Wei, A. Hood, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E. Michel and R. McClintock SPIE Infrared Technology and Applications Conference, April 17-21, 2006, Orlando, FL Proceedings – Infrared Technology and Applications XXXII, Vol. 6206, p. 62060N-1-- April 21, 2006 ...[Visit Journal] Results obtained on GaSb/InAs Type-II superlattices have shown performance comparable to HgCdTe detectors, with the promise of higher performance due to reduced Auger recombination and dark current through improvements in device design and material quality. In this paper, we discuss advancements in Type-II IR sensors that cover the 3 to > 30 µm wavelength range. Specific topics covered will be device design and modeling using the Empirical Tight Binding Method (ETBM), material growth and characterization, device fabrication and testing, as well as focal plane array processing and imaging. Imaging has been demonstrated at room temperature for the first time with a 5 µm cutoff wavelength 256×256 focal plane array. [reprint (PDF)]
12.	Delta-doping optimization for high qualityp-type GaN C. Bayram, J.L. Pau, R. McClintock and M. Razeghi Journal of Applied Physics, Vol. 104, No. 8-- October 15, 2008 ...[Visit Journal] Delta-doping is studied in order to achieve high quality p-type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the delta-doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different delta-doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 10¹⁸ cm⁻³ and superior crystal quality compared to conventional p-GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in delta-doped p-GaN. [reprint (PDF)]
12.	Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure B. Lane, D. Wu, H.J. Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon and M. Razeghi Applied Physics Letters 70 (11)-- April 17, 1997 ...[Visit Journal] InAs_xSb_1−x/InP_1−x−yAs_xSb_y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results. [reprint (PDF)]
12.	Very Long Wavelength Infrared Type-II Detectors Operating at 80K H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, G.J. Brown, W.C. Mitchel, and Y.S. Park Applied Physics Letters 77 (11)-- September 11, 2000 ...[Visit Journal] We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T = 80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λ_c = 17 μm showed a peak responsivity of about 100 mA/W at T = 80 K. Devices with 50% cutoff wavelengths up to λ_c = 22 μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths. [reprint (PDF)]
12.	Geiger-mode operation of back-illuminated GaN avalanche photodiodes J. L. Pau, R. McClintock, K. Minder, C. Bayram, P. Kung, M. Razeghi, E. Muñoz, and D. Silversmith Applied Physics Letters, Vol. 91, No. 04, p. 041104 -1-- July 23, 2007 ...[Visit Journal] We report the Geiger-mode operation of back-illuminated GaN avalanche photodiodes fabricated on transparent AlN templates specifically for back illumination in order to enhance hole-initiated multiplication. The spectral response in Geiger-mode operation was analyzed under low photon fluxes. Single photon detection capabilities were demonstrated in devices with areas ranging from 225 to 14,063 µm². Single photon detection efficiency of 20% and dark count rate < 10 kHz were achieved in the smallest devices. [reprint (PDF)]
12.	Toward realizing high power semiconductor terahertz laser sources at room temperature Manijeh Razeghi Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 802302 (May 25, 2011)-- May 25, 2011 ...[Visit Journal] The terahertz (THz) spectral range offers promising applications in science, industry, and military. THz penetration through nonconductors (fabrics, wood, plastic) enables a more efficient way of performing security checks (for example at airports), as illegal drugs and explosives could be detected. Being a non-ionizing radiation, THz radiation is environment-friendly enabling a safer analysis environment than conventional X-ray based techniques. However, the lack of a compact room temperature THz laser source greatly hinders mass deployment of THz systems in security check points and medical centers. In the past decade, tremendous development has been made in GaAs/AlGaAs based THz Quantum Cascade Laser (QCLs), with maximum operating temperatures close to 200 K (without magnetic field). However, higher temperature operation is severely limited by a small LO-phonon energy (∼ 36 meV) in this material system. With a much larger LO-phonon energy of ∼ 90 meV, III-Nitrides are promising candidates for room temperature THz lasers. However, realizing high quality material for GaN-based intersubband devices presents a significant challenge. Advances with this approach will be presented. Alternatively, recent demonstration of InP based mid-infrared QCLs with extremely high peak power of 120 W at room temperature opens up the possibility of producing high power THz emission with difference frequency generation through two mid-infrared wavelengths. [reprint (PDF)]
12.	Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays E.K. Huang, B.M. Nguyen, D. Hoffman, P.Y. Delaunay and M. Razeghi SPIE Proceedings, San Jose, CA Volume 7222-0Z-- January 26, 2009 ...[Visit Journal] A challenge for Type-II InAs/GaSb superlattice (T2SL) photodetectors is to achieve high fill factor, high aspect ratio etching for third generation focal plane arrays (FPAs). Initially, we compare the morphological and electrical results of single element T2SL photodiodes after BCl₃/Ar inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) dry etching. Using a Si₃N₄ hard mask, ICP-etched structures exemplify greater sidewall verticality and smoothness, which are essential toward the realization of high fill factor FPAs. ICP-etched single element devices with SiO₂ passivation that are 9.3 µm in cutoff wavelength achieved vertical sidewalls of 7.7 µm in depth with a resistance area product at zero bias of greater than 1,000 Ω·cm² and maximum differential resistance in excess of 10,000 Ω·cm² at 77 K. By only modifying the etching technique in the fabrication steps, the ICP-etched photodiodes showed an order of magnitude decrease in their dark current densities in comparison to the ECR-etched devices. Finally, high aspect ratio etching is demonstrated on mutli-element arrays with 3 µm-wide trenches that are 11 µm deep. [reprint (PDF)]
12.	Responsivity and Noise Performance of InGaAs/InP Quantum Well Infrared Photodetectors C. Jelen, S. Slivken, T. David, G. Brown, and M. Razeghi SPIE Conference, San Jose, CA, -- January 28, 1998 ...[Visit Journal] Dark current nose measurements were carried out between 10 and 104 Hz at T = 80K on two InGaAs/InP quantum well IR photo detectors (QWIPs) designed for 8 μm IR detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependent gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate is similar to AlGaAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50X larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers. As a result, a large responsivity of 7.5 A/W at 5V bias and detectivity of 5 X 10¹¹ cm·Hz^½/W at 1.2 V bias were measured for the InGaAs/InP QWIPs at T = 80K. [reprint (PDF)]
12.	High-performance InP-based midinfrared quantum cascade lasers at Northwestern University M. Razeghi, Y. Bai, S. Slivken, and S.R. Darvish SPIE Optical Engineering, Vol. 49, No. 11, November 2010, p. 111103-1-- November 15, 2010 ...[Visit Journal] We present recent performance highlights of midinfrared quantum cascade lasers (QCLs) based on an InP material system. At a representative wavelength around 4.7 µm, a number of breakthroughs have been achieved with concentrated effort. These breakthroughs include watt-level continuous wave operation at room temperature, greater than 50% peak wall plug efficiency at low temperatures, 100-W-level pulsed mode operation at room temperature, and 10-W-level pulsed mode operation of photonic crystal distributed feedback quantum cascade lasers at room temperature. Since the QCL technology is wavelength adaptive in nature, these demonstrations promise significant room for improvement across a wide range of mid-IR wavelengths. [reprint (PDF)]
12.	High performance LWIR Type-II InAs/GaSb superlattice photodetectors and infrared focal plane array Y. Wei, A. Hood, A. Gin, V. Yazdanpanah, M. Razeghi and M. Tidrow SPIE Conference, Jose, CA, Vol. 5732, pp. 309-- January 22, 2005 ...[Visit Journal] We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 μm. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R₀A of diodes passivated with SiO₂ was 23 Ω·cm² after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms. [reprint (PDF)]

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