Center for Quantum Devices - Journal Articles and Conference Proceedings

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1.	Combined resonant tunneling and rate equation modeling of terahertz quantum cascade lasers Zhichao Chen , Andong Liu, Dong Chang , Sukhdeep Dhillon , Manijeh Razeghi , Feihu Wang Journal of Applied Physics, 135, 115703 Terahertz (THz) quantum cascade lasers (QCLs) are technologically important laser sources for the THz range but are complex to model. An efficient extended rate equation model is developed here by incorporating the resonant tunneling mechanism from the density matrix formalism, which permits to simulate THz QCLs with thick carrier injection barriers within the semi-classical formalism. A self-consistent solution is obtained by iteratively solving the Schrödinger-Poisson equation with this transport model. Carrier-light coupling is also included to simulate the current behavior arising from stimulated emission. As a quasi-ab initio model, intermediate parameters such as pure dephasing time and optical linewidth are dynamically calculated in the convergence process, and the only fitting parameters are the interface roughness correlation length and height. Good agreement has been achieved by comparing the simulation results of various designs with experiments, and other models such as density matrix Monte Carlo and non-equilibrium Green’s function method that, unlike here, require important computational resources. The accuracy, compatibility, and computational efficiency of our model enables many application scenarios, such as design optimization and quantitative insights into THz QCLs. Finally, the source code of the model is also provided in the supplementary material of this article for readers to repeat the results presented here, investigate and optimize new designs.
2.	Comparison of PLD-Grown p-NiO/n-Ga2O3 Heterojunctions on Bulk Single Crystal β-Ga2O3 and r-plane Sapphire Substrates D. J. Rogers , V. E. Sandana, F. Hosseini Teherani and M. Razeghi Proc. of SPIE Vol. 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128870J (28 January - 1 February 2024 San Francisco)doi: 10.1117/12.3012511 p-NiO/n-Ga2O3 heterostructures were formed on single crystal (-201) β (monoclinic) Ga2O3 and r-sapphire substrates by Pulsed Laser Deposition. Ring mesa layer stacks were created using a shadow mask during growth. X-Ray diffraction studies were consistent with the formation of (111) oriented fcc NiO on the bulk Ga2O3 and randomly oriented fcc NiO on (102) oriented β-Ga2O3 /r-sapphire. RT optical transmission studies revealed bandgap energy values of ~3.65 eV and ~5.28 eV for the NiO and Ga2O3 on r-sapphire. p-n junction devices were formed by depositing gold contacts on the layer stacks using shadow masks in a thermal evaporator. Both heterojunctions showed rectifying I/V characteristics. On bulk Ga2O, the junction showed a current density over 16mA/cm2 at +20V forward bias and a reverse bias leakage current over 3 orders of magnitude lower at -20V (1 pA). On Ga2O3/r-sapphire the forward bias current density at +15V was about an order of magnitude lower than for the p-NiO/bulk n-Ga2O3 heterojunction while the reverse bias leakage current at -15V (~ 20 pA) was an order of magnitude higher. Hence the NiO/bulk Ga2O3 junction was more rectifying. Upon illumination with a Xenon lamp a distinct increase in current was observed for the IV curves in both devices (four orders of magnitude for -15V reverse bias in the case of the p-NiO/bulk n-Ga2O3 heterojunction). The p-NiO/n-Ga2O3/rsapphire junction gave a spectral responsivity with a FWHM value of 80nm and two distinct response peaks (with maxima at 230 and 270nm) which were attributed to carriers being photogenerated in the Ga2O3 underlayer. For both devices time response studies showed a 10%/90% rise and fall of the photo generated current upon shutter open and closing which was relatively abrupt (millisecond range), and there was no evidence of significant persistent photoconductivity.
3.	Use of Yttria-Stabilised Zirconia Substrates for Zinc Oxide Mediated Epitaxial Lift-off of Superior Yttria-Stabilised Zirconia Thin Films D. J. Rogers, T. Maroutian, V. E. Sandana, P. Lecoeur, F. H. Teherani, P. Bove and M. Razeghi Proc. of SPIE Vol. 12887, Oxide-based Materials and Devices XV, 128870P (January 27- February 1 2024, San Francisco),doi: 10.1117/12.3023431 ZnO layers were grown on (100) and (111) oriented YSZ substrates by pulsed laser deposition (PLD). X-ray diffraction studies revealed growth of wurtzite ZnO with strong preferential (0002) orientation. The ZnO layer on YSZ (111) showed distinct Pendellosung fringes and a more pronounced c-axis orientation (rocking curve of 0.08°). Atomic force microscopy revealed RMS roughnesses of 0.7 and 2.2nm for the ZnO on the YSZ (111) and YSZ (100), respectively. YSZ was then grown on the ZnO buffered YSZ (111) substrate by PLD. XRD revealed that the YSZ overlayer grew with a strong preferential (111) orientation. The YSZ/ZnO/YSZ (111) top surface was temporary bonded to an Apiezon wax carrier and the sample was immersed in 0.1M HCl so as to preferentially etch/dissolve away the ZnO underlayer and release the YSZ from the substrate. XRD revealed only the characteristic (111) peak of YSZ after lift-off and thus confirmed both the dissolution of the ZnO and the preservation of the crystallographic integrity of the YSZ on the wax carrier. Optical and Atomic Force Microscopy revealed some buckling, roughening and cracking of the lifted YSZ, however. XRD suggested that this may have been due to compressive epitaxial strain release.
4.	III-Nitride/Ga2O3 heterostructure for future power electronics: opportunity and challenges Nirajman Shrestha, Jun Hee Lee, F. H. Teherani, Manijeh Razeghi Proc. of SPIE Vol. 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128950B (28 January - 1 February 2024, San Francisco)http://dx.doi.org/10.1117/12.3011688 Ga2O3 has become the new focal point of high-power semiconductor device research due to its superior capability to handle high voltages in smaller dimensions and with higher efficiencies compared to other commercialized semiconductors. However, the low thermal conductivity of the material is expected to limit device performance. To compensate for the low thermal conductivity of Ga2O3 and to achieve a very high density 2-dimensional electron gas (2DEG), an innovative idea is to combine Ga2O3 with III-Nitrides (which have higher thermal conductivity), such as AlN. However, metal-polar AlN/β-Ga2O3 heterojunction provides type-II heterojunction which are beneficial for optoelectronic application, because of the negative value of specific charge density. On the other hand, N-polar AlN/β- Ga2O3 heterostructures provide higher 2DEG concentration and larger breakdown voltage compared to conventional AlGaN/GaN devices. This advancement would allow the demonstration of RF power transistors with a 10x increase in power density compared to today’s State of the Art (SoA) and provide a solution to size, weight, and power-constrained applications reprint
5.	Development of high power, InP-based quantum cascade lasers on alternative epitaxial platforms Steven Slivken, Nirajman Shrestha, Manijeh Razeghi Proc. of SPIE Vol. 12895, Quantum Sensing and Nano Electronics and Photonics XX, 1289503 (28 January - 1 February 2024, San Francisco) doi: 10.1117/12.3009335 In this talk, challenges and solutions associated with the monolithic, epitaxial integration of mid- and longwave- infrared, InP-based quantum cascade lasers on GaAs and Si wafers will be discussed. Initial results, including room temperature, high power, and continuous wave operation, will be described. reprint
6.	Solar-Blind Deep UV Avalanche Photodetectors Using Reduced Area Epitaxy Lakshay Gautam , Junhee Lee, Michael Richards, and Manijeh Razeghi , Lakshay Gautam, Manijeh Razeghi, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 59, NO. 6, 10.1109/JQE.2023.3325254 We report high gain avalanche photodetectors operating in the deep UV wavelength regime. The high gain was leveraged through reduced area epitaxy by patterning AlN on Sapphire substrate. This helps in a substantial reduction of crack formation due to overgrowth on individually isolated AlN mesas. Reproducible gain on the order of 105 was reported for multiple diodes in different areas of 320 × 256 focal plane array.
7.	High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer Junhee Lee, Lakshay Gautam, and Manijeh Razeghi Junhee Lee, Manijeh RazeghiAppl. Phys. Lett. 123, 151902 (2023) https://doi.org/10.1063/5.0170383 We report high-quality Ga2O3 grown on an AlGaN/AlN/Sapphire in a single growth run in the same Metal Organic Chemical Vapor Deposition reactor with an AlOx interlayer at the Ga2O3/AlGaN interface. AlOx interlayer was found to enable the growth of single crystalline Ga2O3 on AlGaN in spite of the high lattice mismatch between the two material systems. The resulting nitride/oxide heterogenous heterostructures showed superior material qualities, which were characterized by structural, electrical, and optical characterization techniques. In particular, a significant enhancement of the electron mobility of the nitride/oxide heterogenous heterostructure is reported when compared to the individual electron mobilities of the Ga2O3 epilayer on the sapphire substrate and the AlGaN/AlN heterostructure on the sapphire substrate. This enhanced mobility marks a significant step in realizing the next generation of power electronic devices and transistors.
8.	Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer Steven Slivken and Manijeh Razeghi S. Slivken and M. Razeghi,, Journal of Quantum Electronics, Vol. 59, No. 4, doi: 10.1109/JQE.2023.3282710 We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35 μm. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of >0.7 W near room temperature. reprint
9.	Investigation of Enhanced Heteroepitaxy and Electrical Properties in k-Ga2O3 due to Interfacing with β-Ga2O3 Template Layers Junhee Lee, Lakshay Gautam, Ferechteh H. Teherani, Eric V. Sandana, P. Bove, David J. Rogers and Manijeh Razeghi J. Lee, M. Razeghi, Physica Status Solidi A 2023,220, 2200559, https://doi.org/10.1002/pssa.202200559 Heteroepitaxial k-Ga2O3 films grown by metal-organic chemical vapor deposition (MOCVD) were found to have superior materials and electrical properties thanks to the interfacing with a b-Ga2O3 template layer. k-Ga2O3grown on sapphire has not been able to demonstrate its full potential due to materials imperfections created by strain induced by the lattice mismatch at the interface between the epilayer and the substrate. By adopting a b-Ga2O3 template on a c-sapphire substrate, higher quality k-Ga2O3thin films were obtained, as evidenced by a smoother surface morphology, narrower XRD peaks, and superior electrical performance. The implications of this phenomenon, caused by b-Ga2O3 buffer layer, are already very encouraging for both boosting current device performance and opening up the perspective of novel applications for Ga2O3. reprint
10.	Ultrafast Pulse Generation from Quantum Cascade Lasers Feihu Wang, Xiaoqiong Qi, Zhichao Chen, Manijeh Razeghi, and Sukhdeep Dhillon Wang, F.; Qi, X.; Chen, Z.; Razeghi, M.; Dhillon, S. Ultrafast Pulse Generation from Quantum Cascade Lasers. Micromachines 2022, 13, 2063. https://doi.org/10.3390/ mi13122063 Quantum cascade lasers (QCLs) have broken the spectral barriers of semiconductor lasers and enabled a range of applications in the mid-infrared (MIR) and terahertz (THz) regimes. However, until recently, generating ultrashort and intense pulses from QCLs has been difficult. This would be useful to study ultrafast processes in MIR and THz using the targeted wavelength-by-design properties of QCLs. Since the first demonstration in 2009, mode-locking of QCLs has undergone considerable development in the past decade, which includes revealing the underlying mechanism of pulse formation, the development of an ultrafast THz detection technique, and the invention of novel pulse compression technology, etc. Here, we review the history and recent progress of ultrafast pulse generation from QCLs in both the THz and MIR regimes. reprint
11.	High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si Steven Slivken and Manijeh Razeghi Journal of Quantum Electronics, Vol. 58, No. 6, 2300206 We report on the realization of an InP-based long wavelength quantum cascade laser grown on top of a silicon substrate. This demonstration first required the development of an epitaxial template with a smooth surface, which combines two methods of dislocation filtering. Once wafer growth was complete, a lateral injection buried heterostructure laser geometry was employed for efficient current injection and low loss. The laser emits at a wavelength of 10.8 μm and is capable of operation above 373 K, with a high peak power (>4 W) at room temperature. Laser threshold behavior with temperature is characterized by a T0 of 178 K. The far field beam shape is single lobed, showing fundamental transverse mode operation. reprint
12.	High power, room temperature, Terahertz sources and frequency comb based on Difference frequency generation at CQD Manijeh Razeghi Proc. of SPIE 12230, 1223006, September 2022 Quantum cascade laser (QCL) is becoming the leading laser source in the mid-infrared and terahertz range due to its rapid development in power, efficiency, and spectral covering range. Owing to its unique intersubband transition and fast carrier lifetime, QCL possesses strong nonlinear susceptibilities that makes it the ideal platform for a variety of nonlinear optical generations. Among this, terahertz (THz) source based on difference-frequency generation (DFG)and frequency comb based on four wave mixing effect are the most exciting phenomena which could potentially revolutionize spectroscopy in mid-infrared (mid-IR) and THz spectral range. In this paper, we will briefly discuss the recent progress of our research. This includes high power high efficiency QCLs, high power room temperature THz sources based on DFG-QCL, room temperature THz frequency comb, and injection locking of high-power QCL frequency combs. The developed QCLs are great candidates as next generation mid-infrared source for spectroscopy and sensing. reprint
13.	High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE Jiakai Li, R. K. Saroj, Steven Slivken, V. H. Nguyen, Gail Brown and Manijeh Razeghi Photonics 2022, 9, 664 In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on InAs/InAsSb type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 um at 77 K. The superlattice for the device was grown by molecular beam epitaxy while the planar device structure was achieved by Zinc diffusion process in a metal–organic chemical vapor deposition reactor. At 77 K, the peak responsivity and the corresponding quantum efficiency had the value of 1.42 A/W and 48% respectively at 3.7 um under -20 mV for the MWIR planar photodetector. At 77 K, the MWIR planar photodetector exhibits a dark current density of 2.0E5 A/cm^2 and the R0A value of ~3.0E2 Ohm cm^2 under -20 mV, which yielded a specific detectivity of 4.0E11 cm Hz^(1/2)/W at 3.7 um. At 150 K, the planar device showed a dark current density of 6.4E-5 A/cm^2 and a quantum efficiency of 49% at ~3.7 um under -20 mV, which yielded a specific detectivity of 2.0E11 cm Hz^(1/2)/W. reprint
14.	High Power Mid-Infrared Quantum Cascade Lasers Grown on Si Steven Slivken, Nirajman Shrestha, and Manijeh Razeghi Photonics, vol. 9, 626 This article details the demonstration of a strain-balanced, InP-based mid-infrared quantum cascade laser structure that is grown directly on a Si substrate. This is facilitated by the creation of a metamorphic buffer layer that is used to convert from the lattice constant of Si (0.543 nm) to that of InP (0.587 nm). The laser geometry utilizes two top contacts in order to be compatible with future large-scale integration. Unlike previous reports, this device is capable of room temperature operation with up to 1.6 W of peak power. The emission wavelength at 293 K is 4.82 um, and the device operates in the fundamental transverse mode. reprint
15.	Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE Rajendra K. Saroj, Van Hoang Nguyen, Steven Slivken, Gail J. Brown and Manijeh Razeghi IEEE Journal of Quantum Electronics We report on a planar long-wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular beam epitaxy, followed by a post-growth Zinc diffusion process in a metal-organic chemical vapor deposition reactor. The planar photodetectors showed a peak responsivity of 2.18 A/W, under an applied bias of −20 mV, with a corresponding quantum efficiency of 44.5%, without any anti-reflection coating, and had a 100% cut-off wavelength of 8.5 μm at 77 K temperature. These photodetectors exhibit a specific peak detectivity of 3.0×10^12 cm.Hz^1/2/W, with a dark current density of 1.5 × 10−5 A/cm2 and the differential-resistance-area product of ∼8.6 × 10−1 Ω.cm2, under an applied bias of −20 mV at 77 K. A comparative study between the planar and conventional mesa isolated photodetectors was also carried out. reprint
16.	Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate Lakshay Gautam, Junhee Lee, Gail Brown, Manijeh Razeghi IEEE Journal of Quantum Electronics, vol. 58, no. 3, pp. 1-5, June 2022, Art no. 4000205 We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate. reprint
17.	High Power Mid-Infrared Quantum Cascade Lasers Grown on GaAs Steven Slivken and Manijeh Razeghi Photonics 2022, 9(4), 231 (COVER ARTICLE) The motivation behind this work is to show that InP-based intersubband lasers with high power can be realized on substrates with significant lattice mismatch. This is a primary concern for the integration of mid-infrared active optoelectronic devices on low-cost photonic platforms, such as Si. As evidence, an InP-based mid-infrared quantum cascade laser structure was grown on a GaAs substrate, which has a large (4%) lattice mismatch with respect to InP. Prior to laser core growth, a metamorphic buffer layer of InP was grown directly on a GaAs substrate to adjust the lattice constant. Wafer characterization data are given to establish general material characteristics. A simple fabrication procedure leads to lasers with high peak power (>14 W) at room temperature. These results are extremely promising for direct quantum cascade laser growth on Si substrates. reprint
18.	Microstrip Array Ring FETs with 2D p-Ga2O3 Channels Grown by MOCVD Manijeh Razeghi, Junhee Lee, Lakshay Gautam, Jean-Pierre Leburton, Ferechteh H. Teherani, Pedram Khalili Amiri, Vinayak P. Dravid and Dimitris Pavlidis Photonics 2021, 8(12), 578; Gallium oxide (Ga2O3) thin films of various thicknesses were grown on sapphire (0001) substrates by metal organic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa), high purity deionized water, and silane (SiH4) as gallium, oxygen, and silicon precursors, respectively. N2 was used as carrier gas. Hall measurements revealed that films grown with a lower VI/III ratio had a dominant p-type conduction with room temperature mobilities up to 7 cm2/Vs and carrier concentrations up to ~1020 cm−3 for thinner layers. High resolution transmission electron microscopy suggested that the layers were mainly κ phase. Microstrip field-effect transistors (FETs) were fabricated using 2D p-type Ga2O3:Si, channels. They achieved a maximum drain current of 2.19 mA and an on/off ratio as high as ~108. A phenomenological model for the p-type conduction was also presented. As the first demonstration of a p-type Ga2O3, this work represents a significant advance which is state of the art, which would allow the fabrication of p-n junction based devices which could be smaller/thinner and bring both cost (more devices/wafer and less growth time) and operating speed (due to miniaturization) advantages. Moreover, the first scaling down to 2D device channels opens the prospect of faster devices and improved heat evacuation reprint
19.	Use of Sacrificial Zinc Oxide Template Layers for Epitaxial Lift-Off of Yttria-Stabilised Zirconia Thin Films D. J. Rogers, T. Maroutian, V. E. Sandana, P. Lecoeur, F. H. Teherani, P. Bove and M. Razeghi Proc. of SPIE 11687, 116872C (2021) 275 nm-thick Yttria-stabilised zirconia (YSZ) layers were grown on 240 nm-thick epitaxial (0002)-oriented ZnO buffer layers on c-sapphire substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) studies revealed high quality epitaxial growth with the YSZ having a preferential (111) orientation and a root mean square surface roughness of 1.4 nm over an area of 10 um x 10 um. The YSZ top surface was then temporary bonded to an Apiezon W wax carrier and the sample was immersed in 0.1M HCl so as to preferentially etch/dissolve away the ZnO underlayer and release of the YSZ from the sapphire substrate. XRD revealed only the characteristic (111) peak of YSZ after lift-off and thus confirmed both the dissolution of the ZnO and the preservation of the crystallographic integrity of the YSZ on the wax carrier. Optical and Atomic Force Microscopy revealed some buckling, roughening and cracking of the lifted YSZ, however, which was probably due to tensile epitaxial strain release. reprint
20.	High-brightness LWIR quantum cascade lasers F. Wang, S. Slivken, and M. Razeghi Optics Letters, vol. 46, No. 20, 5193 Long-wave infrared (LWIR, lambda~8-12 um) quantum cascade lasers (QCLs) are drawing increasing interest, as they provide the possibility of long-distance transmission of light through the atmosphere owing to the reduced water absorption. However, their development has been lagging behind the shorter wavelength QCLs due to much bigger technological challenges. In this Letter, through band structure engineering based on a highly localized diagonal laser transition strategy and out-coupler design using an electrically isolated taper structure, we demonstrate high beam quality single-mode LWIR QCLs with high-brightness (2.0 MW cm^-2 sr^-1 for lambda~10 um, 2.2 MW cm^-2 sr^-1 for lambda~9 um, 5.0 MW cm^-2 sr^-1 for lambda~8 um) light extraction from a single facet in continuous-wave operation at 15 ^oC. These results mark an important milestone in exploring the lighting capability of inter-sub-band semiconductor lasers in the LWIR spectral range. reprint
21.	Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice Arash Dehzangi, Jiakai Li, Manijeh Razeghi Photonics 2021, 8(5), 148; https://doi.org/10.3390/photonics8050148 Received: 8 March 2021 / Revised: 12 April 2021 / Accepted: 25 April 2021 / Published: 30 April 2021 We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved. reprint
22.	High Thermal Stability of κ-Ga2O3 Grown by MOCVD Junhee Lee, Honghyuk Kim, Lakshay Gautam and Manijeh Razeghi Lee, J.; Kim, H.; Gautam, L.; Razeghi, M. High Thermal Stability of κ-Ga2O3 Grown by MOCVD. Crystals 2021, 11, 446. https://doi.org/ 10.3390/cryst11040446 We report a high thermal stability of kappa gallium oxide grown on c-plane sapphire substrate by metal organic chemical vapor deposition. Kappa gallium oxide is widely known as a metastable polymorph transitioning its phase when subjected to a high temperature. Here, we show the kappa gallium oxide whose phase is stable in a high temperature annealing process at 1000 °C. These oxide films were grown at 690 °C under nitrogen carrier gas. The materials showed high electrical resistivity when doped with silicon, whereas the film conductivity was significantly improved when doped with both indium and silicon. This work provides a pathway to overcoming limitations for the advance in utilizing kappa gallium oxide possessing superior electrical characteristics. reprint
23.	Harmonic injection locking of high-power mid-infrared quantum cascade lasers Feihu Wang, Steven Slivken, and Manijeh Razeghi OSA Photonics Research •https://doi.org/10.1364/PRJ.423573 High-power, high-speed quantum cascade lasers (QCLs) with stable emission in the mid-infrared regime are of great importance for applications in metrology, telecommunication, and fundamental tests of physics. Owing to the inter-sub-band transition, the unique ultrafast gain recovery time of the QCL with picosecond dynamics is expected to overcome the modulation limit of classical semiconductor lasers and bring a revolution for the next generation of ultrahigh-speed optical communication. Therefore, harmonic injection locking, offering the possibility to fast modulate and greatly stabilize the laser emission beyond the rate limited by cavity length, is inherently adapted to QCLs. In this work, we demonstrate for the first time the harmonic injection locking of a mid-infrared QCL with an output power over 1 watt in continuous-wave operation at 288 K. Compared with an unlocked laser, the inter-mode spacing fluctuation of an injection locked QCL can be considerably reduced by a factor above 1×10 E3, which permits the realization of an ultra-stable mid-infrared semiconductor laser with high phase coherence and frequency purity. Despite temperature change, this fluctuation can be still stabilized to hertz level by a microwave modulation up to ∼18 GHz. These results open up the prospect of the applications of mid-infrared QCL technology for frequency comb engineering, metrology and the next generation ultrahigh-speed telecommunication. It may also stimulate new schemes for exploring ultrafast mid-infrared pulse generation in QCLs. reprint
24.	Mid‑wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice Jiakai Li, Arash Dehzangi, Gail Brown, Manijeh Razeghi Scientifc Reports \| (2021) 11:7104 \| https://doi.org/10.1038/s41598-021-86566-8 In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-of wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be ~ 0.097 at 200 K. reprint
25.	Sharp/Tuneable UVC Selectivity and Extreme Solar Blindness in Nominally Undoped Ga2O3 MSM Photodetectors Grown by Pulsed Laser Deposition D. J. Rogers, A. Courtois, F. H. Teherani, V. E. Sandana, P. Bove, X. Arrateig, L. Damé, P. Maso, M. Meftah, W. El Huni, Y. Sama, H. Bouhnane, S. Gautier, A. Ougazzaden, M. Razeghi Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116872D (24 March 2021); doi: 10.1117/12.2596194 Ga2O3 layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction revealed that the films were mainly β-Ga2O3 (monoclinic) with strong (-201) orientation. Metal-Semiconductor-Metal photodetectors based on gold/nickel Inter- Digitated-Transducer structures were fabricated by single-step negative photolithography. 240 nm peak response sensors gave over 2 orders-of-magnitude of separation between dark and light signal with state-of-the-art solar and visible rejection ratios ((I240 : I290) of > 3 x 105 and (I240 : I400) of > 2 x 106) and dark signals of <50 pA (at a bias of -5V). Spectral responsivities showed an exceptionally narrow linewidth (16.5 nm) and peak values exhibited a slightly superlinear increase with applied bias up to a value of 6.5 A/W (i.e. a quantum efficiency of > 3000%) at 20V bias. reprint

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