Publications by    
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751.  Evaluation of the Band Offsets of GaAs-GaInP Multilayers by Electroreflectance
Razeghi M., D. Yang, J.W. Garland, Z. Zhang, D. Xue
SPIE Proceedings, Vol. 1676, pp. 130-- January 1, 1992
We report the first band offset measurement of GaAs/Ga0.51In0.49P multiquantum wells and superlattices by electrolyte electroreflectance spectroscopy. The conduction and valence band discontinuities (Delta) Ec equals 159 ± 4 meV and (Delta) Ev equals 388 ± 6 meV have been measured. The values found for the conduction band, heavy-hole and light-hole masses in the GaInP barriers and GaAs wells and for the split-off well mass are in excellent agreement with the literature. The intraband, intersubband transition energies, which are important for III - V infrared detection devices, also were directly measured. reprint
 
752.  Caracterisation optique des semiconducteurs III-V par ellipsometrie et reflectance differentielle spectroscopique
Acher O., Omnes F., Razeghi M., Drevillion B.
-- September 1, 1991
 
753.  Incorporation of Impurities in GaAs Grown by MOCVD
Razeghi M., and M.A. di Forte-Poisson
-- September 1, 1991
 
754.  Etude du dopage de type n et p des materiaux GaAs et GaInP
Omnes F., Defour M., Razeghi M.
-- September 1, 1991
 
755.  GaAs-GaInP Multipayers for High Performance Electronic Devices
Omnes F., and Razeghi M.
-- September 1, 1991
 
756.  A Review of the Band Offsets Measurements in the GaAs/Ga0.49In0.51P System
Omnes F., and Razeghi M.
-- September 1, 1991
 
757.  Optical Investigations of GaAs-GaInP Quantum Wells and Superlattices Grown by Metalorganic Chemical Vapor Deposition
Omnes F., and Razeghi M.
Applied Physics Letters 59 (9), p. 1034-- May 28, 1991
Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs‐Ga0.51In0.49P lattice‐matched quantum wells and superlattices are discussed. The full width at half maximum of a 10‐period GaAs‐GaInP superlattice with Lz=90 Å and LB=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light‐hole and electron to heavy‐hole transitions. The GaInP‐GaAs interface suffers from memory effect of In, rather than P or As elements. reprint
 
758.  Defects in Organometallic Vapor-Phase Epitaxy-Grown GaInP Layers
Feng S.L., Bourgoin J.C., Omnes F., and Razeghi M.
Applied Physics Letters 59 (8), p. 941-- May 28, 1991
Non-intentionally doped metalorganic vapor‐phase epitaxy Ga1−x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance‐voltage and deep-level transient spectroscopy techniques. They are found to exhibit a free‐carrier concentration at room temperature of the order of 1015 cm−3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼1013 cm−3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014–1015 cm−3. reprint
 
759.  InGaAs(P)/InP MQW Mixing by Zn Diffusion Ge and S Implantation for Optoelectronic Applications,
Julien F.H., Bradley M., Rao E.V.K., Razeghi M., Goldstein L.
-- November 30, 1990
 
760.  Defects in High Purity GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition
Feng S.L., Bourgoin J.C., and Razeghi M.
-- November 30, 1990
 
761.  Recent Advances in MOCVD Growth of GaAs/GaInP System for OEICs Applications
Razeghi M.
-- November 30, 1990
 

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