Publications by    
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776.  Caracterisation optique des semiconducteurs III-V par ellipsometrie et reflectance differentielle spectroscopique
Acher O., Omnes F., Razeghi M., Drevillion B.
Thomson-CSF Revue Technique, Vol. 23, No. 3,-- September 1, 1991
 
777.  Incorporation of Impurities in GaAs Grown by MOCVD
Razeghi M., and M.A. di Forte-Poisson
Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991
 
778.  Etude du dopage de type n et p des materiaux GaAs et GaInP
Omnes F., Defour M., Razeghi M.
Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991
 
779.  GaAs-GaInP Multipayers for High Performance Electronic Devices
Omnes F., and Razeghi M.
Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991
 
780.  A Review of the Band Offsets Measurements in the GaAs/Ga0.49In0.51P System
Omnes F., and Razeghi M.
Thomson-CSF Revue Technique, Vol. 23, No. 3-- September 1, 1991
 
781.  Optical Investigations of GaAs-GaInP Quantum Wells and Superlattices Grown by Metalorganic Chemical Vapor Deposition
Omnes F., and Razeghi M.
Applied Physics Letters 59 (9), p. 1034-- May 28, 1991
Recent experimental results on the photoluminescence and photoluminescence excitation of GaAs‐Ga0.51In0.49P lattice‐matched quantum wells and superlattices are discussed. The full width at half maximum of a 10‐period GaAs‐GaInP superlattice with Lz=90 Å and LB=100 Å is 4 meV at 4 K. The photoluminescence excitation exhibits very sharp peaks attributed to the electron to light‐hole and electron to heavy‐hole transitions. The GaInP‐GaAs interface suffers from memory effect of In, rather than P or As elements. reprint
 
782.  Defects in Organometallic Vapor-Phase Epitaxy-Grown GaInP Layers
Feng S.L., Bourgoin J.C., Omnes F., and Razeghi M.
Applied Physics Letters 59 (8), p. 941-- May 28, 1991
Non-intentionally doped metalorganic vapor‐phase epitaxy Ga1−x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance‐voltage and deep-level transient spectroscopy techniques. They are found to exhibit a free‐carrier concentration at room temperature of the order of 1015 cm−3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼1013 cm−3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014–1015 cm−3. reprint
 
783.  InGaAs(P)/InP MQW Mixing by Zn Diffusion Ge and S Implantation for Optoelectronic Applications,
Julien F.H., Bradley M., Rao E.V.K., Razeghi M., Goldstein L.
Optical and Quantum Electronics, 23-- November 30, 1990
 
784.  Defects in High Purity GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition
Feng S.L., Bourgoin J.C., and Razeghi M.
Semiconductor Science and Technology 6, pp. 229-230-- November 30, 1990
 
785.  Recent Advances in MOCVD Growth of GaAs/GaInP System for OEICs Applications
Razeghi M.
Proceeding of the 7th International Conference on Vapor Growth and Epitaxy, Nagoya, Japan-- November 30, 1990
 
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Center for Quantum Devices
ECE Department, McCormick School of Engineering, Northwestern University
 Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
 Phone: (847) 491-7251
 Email: razeghi@northwestern.edu
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