Center for Quantum Devices - Journal Articles and Conference Proceedings

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826.	Frequency-Shifted Polaron Coupling in Ga0.47In0.53As Heterojunctions R. J. Nicholas*, L. C. Brunel, S. Huant, K. Karrai, and J. C. Portal† M. A. Brummell M. Razeghi K. Y. Cheng and A. Y. Cho Phys. Rev. Lett. 55, 883 – 1985-- August 19, 1985 Frequency-dependent cyclotron-resonance measurements are reported on Ga0.47In0.53As-InP and Ga0.47In0.53A⁢s−A⁢l0.48In0.52As heterojunctions. Discontinuities in the effective mass occur at two frequencies as a result of resonant polaron coupling with both optic-phonon modes present in the Ga0.47In0.53As alloy. The coupling occurs at the frequencies at the TO phonons, in contrast to measurements on bulk materials. Possible changes in the screening and polarization of the optic-phonon modes are considered. reprint
827.	Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD M. Razeghi; R. Blondeau; M. Krakowski; J.-C. Bouley; M. Papuchon; B. Cremoux; J. Duchemin IEEE Journal of Quantum Electronics ( Volume: 21, Issue: 6, June 1985)-- June 30, 1985 GaInAsP-InP distributed feedback (DFB) lasers emitting at 1.57 μm have been fabricated on material grown completely by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The CW threshold current of 60 mA and an output power of 6 mW per facet at room temperature have been obtained. The lasing wavelength λLunder CW operation showed a temperature coefficient (d_{\lambdaL}/dT) of 0.9 Å/°C for this DFB laser over the range of10-90\degC. A stable single longitudinal mode was maintained under high speed pulse modulation up to 500 ps, and sinusoidal modulation at 1 Ghz.
828.	Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP K.‐H. Goetz; D. Bimberg; K.‐A. Brauchle; H. Jürgensen; J. Selders; M. Razeghi; E. Kuphal K.‐H. Goetz, D. Bimberg, K.‐A. Brauchle, H. Jürgensen, J. Selders, M. Razeghi, E. Kuphal; Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP. Appl. Phys. Lett. 1 February 1985; 46-- February 1, 1985 Two deep traps in Ga0.47In0.53As/InP:Fe at a depth of 110 meV and 150 meV, respectively, are observed for the first time using low‐temperature photoluminescence and deep level transient spectroscopy. The dependence of luminescence intensity on the growth process itself (liquid phase epitaxy, vapor phase epitaxy, and metalorganic chemical vapor deposition) and its parameters (growth temperature, layer thickness) and the substrate doping is reported and leads to the unambigous identification of the 150‐meV acceptorlike trap as being caused by Fe impurities. Fe diffuses from the substrate to the epitaxial layer during the growth process. This outdiffusion is less pronounced for layers grown at lower temperature. The level at 110 meV which is also observed in layers grown on InP:S substrate is tentatively assigned to an intrinsic defect of Ga0.47In0.53As. reprint
829.	Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition M. Razeghi; R. Blondeau; K. Kazmierski; M. Krakowski; J. P. Duchemin M. Razeghi, R. Blondeau, K. Kazmierski, M. Krakowski, J. P. Duchemin; Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition. Appl. Phys. Lett. 15 January 1985; 46 (2): 131–133.-- January 15, 1985 GaInAsP‐InP buried ridge structure lasers emitting at 1.3 μm have been fabricated on material grown completely by low pressure metalorganic chemical vapor deposition. These lasers have low threshold (11 mA), exhibit linear (kink‐free) light‐current characteristics up to high powers (10 mW/facets), and can be operated at high temperatures (70 °C). Excellent uniformity over 10 cm2 has been obtained, and an external quantum efficiency of 60% for two faces has been measured.
830.	Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition M. Razeghi; J. P. Duchemin; J. C. Portal M. Razeghi, J. P. Duchemin, J. C. Portal; Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition. Appl. Phys. Lett. 1 January 1985; 46 (1): 46–48.-- January 1, 1985 We report the first observation of a two‐dimensional electron gas from Shubnikov–de Haas experiments, in a Ga0.25In0.75As0.50P0.50‐InP heterojunction, multi‐quantum well, and superlattices grown by metalorganic chemical vapor deposition at reduced pressure.
831.	LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION OF InP AND REI~ATED COMPOUNDS M. Razeghi, M.A. Poisson, J.P. Larivain, J.P. Duchemin Manijeh Razeghi, Chapter 5 Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1−xAsyP1−y Alloys, Editor(s): W.T. Tsang, Semiconductors and Semimetals, Elsevier, Volume 22, Part A, 1985, Pages 299-378, ISSN 0080-8784, ISBN 9780127521220-- January 1, 1985 This chapter discusses that metallo-organic chemical vapor deposition (MOCVD) has emerged as a valuable tool for the growth of device-quality epitaxial layers of InP, G0.47In0.53 As, and GaxIn1–xAsyP1–y. The GaInAsP/InP alloy system has many advantages and has been given considerable research attention for electro-optical device applications. However, there are still important unsolved problems for the growth of these materials with liquid-phase epitaxy (LPE), vapor-phase epitaxy (VPE), and molecular-beam epitaxy (MBE). One of these is the development of practical LPE techniques for reproducibly growing InP and GaInAsP alloys with a low carrier concentration level. This is especially important for the fabrication of p-i-n and avalanche photodiodes. A further problem with LPE is the growth of InP on longer-wavelength layers, such as GaInAs, without any interface compositional grading layers and anti-melt-back layers. With the VPE technique, it is difficult to obtain misfit dislocation-free InP-GaInAsP-InP heterostructures and very thin layers. A problem for the MBE technique is the growth of phosphorus-bearing alloys.
832.	Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys M. Razeghi, J.P. Duchemin M. Razeghi, J.P. Duchemin, Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys, Journal of Crystal Growth, Volume 70, Issues 1–2, 1984, Pages 145-149,-- December 1, 1984 The low pressure metalorganic chemical vapour deposition (LPMOCVD) growth of GaxIn1-xAsyP1-y-InP lattice matched system, with high mobilities, sharp interfaces, low background doping densities, and the formation of a two-dimensional electron gas (2DEG) at the interfaces, has recently made spectacular advances, as in evidenced by the availability of high quality DH lasers, PIN photodiodes, and Gunn diodes. We present here some new results obtained on the above-mentioned material and devices. reprint
833.	CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD R. Blondeau, M. Razeghi, M. Krakowski, G. Vilain, B. de Cremoux, J.-P. Duchemin Electronics Letters Volume 20, Issue 21-- October 1, 1984 A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 μm and fabricated on material grown entirely by LP-MOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.
834.	cw operation of 1.57‐μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low‐pressure metalorganic chemical vapor deposition M. Razeghi; R. Blondeau; K. Kazmierski; M. Krakowski; B. de Cremoux; J. P. Duchemin; J. C. Bouley Appl. Phys. Lett. 45, 784–786 (1984)-- October 1, 1984 Continuous wave operation of 1. 57-Jim distributed feedback lasers fabricated on material grown by two-step low-pressure metalorganic chemical vapor deposition growth process is reported for the first time. Room-temperature continuous wave threshold currents as low as 60 rnA have been measured for devices with cavity length of 300 Jim and stripe width of 5 Jim. Single longitudinal mode operation at fixed mode was obtained under the continuous wave condition, in the temperature range 9-90 °C, with the wavelength shift of 0.9 A/C. A stop band of25 A in which no resonance mode emission existed, was observed in the output spectrum of the distributed feedback laser.
835.	Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures H. P. Wei; D. C. Tsui; M. Razeghi H. P. Wei, D. C. Tsui, M. Razeghi; Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures. Appl. Phys. Lett. 15 September 1984; 45 (6): 666–668.-- September 15, 1984 A persistent photoconductivity is observed in the transport of the high mobility two‐dimensional electron gas in In0.53Ga0.47 As/InP heterostructures. Low field Hall measurements from 300 to 4.2 K and the quantized Hall effect in the high field limit are studied with radiation from visible and infrared light‐emitting diodes. Our results demonstrate conclusively that the effect is due to photogeneration of electron‐hole pairs in the heterostructure and trapping of holes in the In0.53Ga0.47 As. reprint
836.	1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD M. Razeghi, B. de Crémoux, J.P. Duchemin M. Razeghi, B. de Crémoux, J.P. Duchemin, 1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD, Journal of Crystal Growth, Volume 68, Issue 1, 1984, Pages 389-397,-- September 1, 1984 Room temperature pulse operation and continuous wave (CW) operation in the 1.2–1.6 μm region have been achieved in GaInAsP-InP DH lasers fabricated on material grown by LPMOCVD. Threshold currents density as low as 430 A/cm2 (cavity length of 950 μm) have been measured for devices emitting at 1.3 μm. Threshold current densities of 1060 A/cm2 (cavity length of 400 μm) have been obtained for devices emitting at 1.55 μm, with active layer thicknesses of 0.22 μm. Values of T0 between 60 and 70 K have been obtained. Fundamental transverse mode oscillation has been achieved (for CW operation) up to an output power of 10 mW. The preliminary results on the aging test are most encouraging and demonstrate that the LPMOCVD lasers emitting at 1.2–1.6 μm have comparable degradation rates to those of LPE lasers suggesting the LPMOCVD technique is promising for large scale production of laser diodes. reprint
837.	Two-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices J.C. Portal, G. Gregoris a b , M.A. Brummell , R.J. Nicholas, M. Razeghi, M.A. Di Forte-Poisson, K.Y. Cheng, A.Y. Cho J.C. Portal, G. Gregoris, M.A. Brummell, R.J. Nicholas, M. Razeghi, M.A. Di Forte-Poisson, K.Y. Cheng, A.Y. Cho, Two-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices, Surface Science, Volume 142, Issues 1–3, 1984, Pages 368-374,-- July 1, 1984 We report the observation of magnetophonon resonance in GaInAs-InP heterojunctions and measurements of the temperature dependence of the oscillations. A single series of oscillations due to scattering by the “GaAs-like” mode of GaInAs is seen, in contrast to GaInAs-InP superlattices, where scattering from InP phonons is also observed, and GaInAs-AlInAs heterojunctions, where coupling to “InAs-like” modes only is seen. This behaviour is discussed in terms of long-range phonon interactions and interface phonons. reprint
838.	Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature Y. Guldner, J.P. Hirtz, A. Briggs, J.P. Vieren, M. Voos, M. Razeghi Y. Guldner, J.P. Hirtz, A. Briggs, J.P. Vieren, M. Voos, M. Razeghi, Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature, Surface Science, Volume 142, Issues 1–3, 1984, Pages 179-181,-- July 1, 1984 We report investigations of the temperature dependence of the quantum Hall effect in modulation doped InxGa1−xAs-InP heterojunctions. The diagonal conductivity σxx is studied at several minima of the magneto-resistance ϱxx between 50 mK and 2 K. A hopping conduction mechanism is observed when the Fermi level is in the tail of the Landau levels. reprint
839.	Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP M. A. di Forte‐Poisson; M. Razeghi; J. P. Duchemin M. A. di Forte‐Poisson, M. Razeghi, J. P. Duchemin; Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP. J. Appl. Phys. 1 December 1983; 54 (12): 7187–7189. https://doi.org/10.1063/1.331956-- December 1, 1983 In1−x Alx As epitaxial layers were grown on (100) InP substrates by the organometallic vapor phase epitaxy method. Undoped layers with mirror smooth surfaces were obtained for substrate temperatures of 600–650 °C. By adjusting the relative ratio of In and Al, lattice matched In0.52 Al0.48 As epilayers were reproducibly grown on InP substrates. X‐ray measurements, scanning Auger analyses, and electron mobilities are presented. These results show that the quality of the epilayers obtained here was comparable to the best reported layers grown by other methods. reprint
840.	Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure M. Razeghi, J.P. Duchemin M. Razeghi, J.P. Duchemin, Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure, Journal of Crystal Growth, Volume 64, Issue 1, 1983, Pages 76-82,-- November 1, 1983 M. Razeghi, J.P. Duchemin, Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure, Journal of Crystal Growth, Volume 64, Issue 1, 1983, Pages 76-82, reprint
841.	Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition M. Razeghi; J. P. Hirtz; U. O. Ziemelis; C. Delalande; B. Etienne; M. Voos Appl. Phys. Lett. 43, 585–587 (1983)-- September 15, 1983 We describe the growth of multiquantum well and single quantum well Ga0 ,47 InOS3 As-InP structures by low pressure metalorganic chemical vapor deposition. The multi well structure consists of 2S-, SO-, 100-, and 200-A quantum wells (Ga0 ,47 InOS3 As layers) separated by SOO-A barriers (InP layers). Auger measurements indicate the presence offour distinct wells with abrupt boundaries. Photoluminescence measurements are consistent with the existence of four wells; however, deviations are noted between experimentally determined and theoretically predicted recombination energies. An analogous situation exists for the single (SO and 100 A) quantum well structures. Possible explanations, including variation of well composition, variation of well thickness, and participation of impurities in the recombination process are suggested.
842.	High magnetic field studies of the two‐dimensional electron gas in GaInAs‐InP superlattices J. C. Portal; R. J. Nicholas; M. A. Brummell; M. Razeghi; M. A. Poisson J. C. Portal, R. J. Nicholas, M. A. Brummell, M. Razeghi, M. A. Poisson; High magnetic field studies of the two‐dimensional electron gas in GaInAs‐InP superlattices. Appl. Phys. Lett. 1 August 1983; 43 (3): 293–295.-- August 1, 1983 We report the observation of Shubnikov–de Haas oscillations in superlattices of GaInAs and InP, showing evidence of two‐dimensional behavior. The electron g‐factor is deduced from both the criteria for resolution of a spin splitting by comparison with the broadening parameter Γ, and from the tilted field method, and is shown to increase with increasing resolution of the Landau levels in a manner consistent with the theory of Ando and Uemura. In the ultraquantum limit, structure at ν=1/2 and ν=1/3 is observed. reprint
843.	Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μm M. Razeghi, P. Hirtz, R. Blondeau, B. de Cremoux, J.-P. Duchemin Electronics Letters Volume 19, Issue 13-- June 1, 1983 We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1.5 μm, grown for the first time by MOCVD. This device has been operated at room temperature for more than 104 h without significant degradation.
844.	Two-dimensional magnetophonon resonance. I. GaInAs-InP superlattices J C Portal, J Cisowski, R J Nicholas, M A Brummell, M Razeghi and M A Poisson J C Portal et al 1983 J. Phys. C: Solid State Phys. 16 L573-- April 5, 1983 Magnetophonon resonance results are reported for two-dimensional electron gases confined in the GaInAs layers of GaInAs-InP superlattices. Two series of oscillations are observed: one due to scattering by the 'GaAs-like' LO phonon mode of GaInAs, and the second due to interaction with InP LO phonons. The strength of the latter series increases relative to the former as the GaInAs layer thickness is reduced. This is evidence for a long-range phonon interaction, with the InP phonon field extending into the GaInAs to couple significantly with the electrons bound in the quantum wells. No evidence of interface phonons is seen. reprint
845.	Low pressure-MOCVD growth of Ga0.47In0.53As-InP heterojunction and superlattices M. Razeghi, J.-P. Duchemin @article{Razeghi1983LowPG, title={Low pressure‐MOCVD growth of Ga0.47In0.53As–InP heterojunction and Manijeh Razeghi and J. P. Duchemin, Journal of Vacuum Science & Technology B, 983, volume-1, pages=262-265 -- April 1, 1983 We report the latest results of a continuing study of low pressure‐metal–organic chemical vapor deposition (LP‐MOCVD) growth of InP and Ga0.47In0.53As–InP heterojunctions and superlattices, which describe the general growth of InP and GaInAs with specific application to quantum well heterostructure. A study of the sources and control of residual impurities in InP and Ga0.47In0.53As, the effects of source purity upon residual impurities, mobility, and 2 K PL intensity are detailed. Total impurity concentrations as low as 6×1014 cm−3 for InP and 3×1014 cm−3 for Ga0.47In0.53As have been obtained. Mobility as high as=μ (300)=5350, μ (77)=60 000 cm2 V−1 s−1 for InP, and μ (300)=12 000, μ (77)=60 000, μ (2)=100 000 cm2 V−1 s−1 for GaInAs layers have been measured.
846.	Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD M. Razeghi, S. Hersee, P. Hirtz, R. Blondeau, B. de Cremoux, J.- P. Duchemin Electronics Letters Volume 19, Issue 9-- April 1, 1983 Room-temperature GaInAsP/InP DH lasers emitting at 1.3 μm and having very low threshold current densities have been grown by LP MOCVD. Thresholds were lower than the best values reported for comparable devices grown by LPE, the lowest threshold being 430 A/cm2 for a cavity length of 950 μm (width 150 μm) with an active-layer thickness of d = 2200 A.
847.	Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition K.‐H. Goetz; D. Bimberg; H. Jürgensen; J. Selders; A. V. Solomonov; G. F. Glinskii; M. Razeghi K.‐H. Goetz, D. Bimberg, H. Jürgensen, J. Selders, A. V. Solomonov, G. F. Glinskii, M. Razeghi; Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44-- March 29, 1983 Optical, crystallographic, and transport properties of nominally undoped n‐type and Zn doped p‐type Gax In1−xAs /InP (0.44 reprint
848.	Low pressure metalorganic chemical vapor deposition of InP and related compounds M. Razeghi, M. A. Poisson, J. P. Larivain & J. P. Duchemin Razeghi, M., Poisson, M.A., Larivain, J.P. et al. Low pressure metalorganic chemical vapor deposition of InP and related compounds. J. Electron. Mater. 12, 371–395 (1983). https://doi.org/10.1007/BF02651138-- March 1, 1983 The low pressure metalorganic chemical vapor deposition epitaxial growth and characterization of InP, Ga0.47In0.53 As and GaxIn1-xAsyP1-y, lattice-matched to InP substrate are described. The layers were found to have the same etch pit density (EPD) as the substrate. The best mobility obtained for InP was 5300 cm2 V−1S−1 at 300 K and 58 900 cm2 V−1 S−1 at 772K, and for GaInAs was 11900 cm2 V−1 S−1 at 300 K, 54 600 cm2 V−1 S−1 at 77 K and 90 000 cm V−1S−1 at 2°K. We report the first successful growth of a GaInAs-InP superlattice and the enhanced mobility of a two dimensional electron gas at a GaInAs -InP heterojunction grown by LP-MO CVD. LP MO CVD material has been used for GaInAsPInP, DH lasers emitting at 1.3 um and 1.5 um. These devices exhibit a low threshold current, a slightly higher than liquid phase epitaxy devices and a high differential quantum efficiency of 60%. Fundamental transverse mode oscillation has been achieved up to a power outpout of 10 mW. Threshold currents as low as 200 mA dc have been measured for devices with a stripe width of 9 um and a cavity length of 300 um for emission at 1.5 um. Values of T in the range 64–80 C have been obtained. Preliminary life testing has been carried out at room temperature on a few laser diodes (λ = 1.5μm). Operation at constant current for severalthousand hours has been achieved with no change in the threshold current. reprint
849.	Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface R.J Nicholas a, M.A Brummell a , J.C Portal b, M Razeghi c, M.A Poisson R.J Nicholas, M.A Brummell, J.C Portal, M Razeghi, M.A Poisson, Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface, Solid State Communications, Volume 43, Issue 11, 1982, Pages 825-828,-- September 1, 1982 We report the observation of a two dimensional gas of high mobility electrons at the interface of a Ga0.47In0.53AsInP heterojunction grown by MOCVD. The two dimensional electron concentrations and effective mass are determined by Shubnikov-de Haas studies, and compared with theoretical predictions. Evidence of an enhancement of the g-factor is observed. We also report observations of very pronounced quantum Hall steps as seen in GaAs-GaAlAs heterojunctions. reprint
850.	The quantum Hall effect in modulation doped In0.53Ga0.47As-InP heterojunctions Y. Guldner, J.P. Hirtz, J.P. Vieren, P. Voisin, M. Voos, M. Razeghi Y. Guldner, J.P. Hirtz, J.P. Vieren, P. Voisin, M. Voos, et al.. The quantum Hall effect in modulation doped In0.53Ga 0.47As-InP heterojunctions. Journal de Physique Lettres, 1982, 43 (16), pp.613-616. ff10.1051/jphyslet:019820043016061300ff. ffjpa-00232099f-- June 29, 1982 We report the first observation of the quantum Hall effect in modulation doped In0.53Ga0.47As-InP heterojunctions at 4.2 and 1.5 K. The results are then compared to data obtained in a GaAs-AlxGa1-xAs heterojunction having similar electronic characteristics.

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