Center for Quantum Devices - Journal Articles and Conference Proceedings

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1.	InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metalorganic chemical vapor deposition J. Diaz, I. Eliashevich, K. Mobarhan, L.J. Wang, D.Z. Garbuzov, and M. Razeghi IEEE Photonics Technology Letters 6 (2)-- February 1, 1994 Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at /spl lambda/=0.808 μm with a full width at half maximum /spl les/2 mm, meeting the necessary requirements for Nd:YAG pumping systems. A threshold current density of 470 A/cm2 and differential efficiency of 0.7 W/A with series resistance of 0.12 /spl Omega/ for 1.37 mm-long diodes have been measured. reprint
2.	GaInAsP/InP 1.35 μm Double Heterostructure Laser Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition K. Mobarhan, C. Jelen, E. Kolev, and M. Razeghi Journal of Applied Physics 74 (1)-- July 1, 1993 A 1.35 μm GaInAsP/InP double heterostructure laser has been grown on a Si substrate using low‐pressure metalorganic chemical vapor deposition. This was done without the use of a superlattice layer or a very thick InP buffer layer, which are used to prevent the dislocations from spreading into the active layer. Pulsed operation with output power of over 200 mW per facet was achieved at room temperature for broad area lasers with 20 μm width and 170 μm cavity length. The threshold current density of a 350 μm cavity length device was 9.8 kA/cm². The characteristic temperature was 66 K. reprint
3.	High Power 0.98 μm GaInAs/GaAs/GaInP Multiple Quantum Well Laser K. Mobarhan, M. Razeghi, G. Marquebielle and E. Vassilaki Journal of Applied Physics 72 (9)-- November 1, 1992 We report the fabrication of high quality Ga_0.8In_0.2As/GaAs/Ga_0.51In_0.49P multiple quantum well laser emitting at 0.98 μm grown by low pressure metalorganic chemical vapor deposition. Continuous wave operation with output power of 500 mW per facet was achieved at room temperature for a broad area laser with 130 μm width and 300 μm cavity length. This is an unusually high value of output power for this wavelength laser in this material system. The differential quantum efficiency exceeded 75% with excellent homogeneity and uniformity. The characteristic temperature, T₀ was in the range of 120–130 K. reprint
4.	GaInAs/GaAs/GaInP Buried Ridge Structure Single Quantum Well Laser Emitting at 0.98 μm K. Mobarhan, M. Razeghi and R. Blondeau IEEE Electronics Letters 28 (16)-- July 30, 1992

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