Publications by    
Page 1  (8 Items)

1.  Gas Source Molecular Beam Epitaxy Growth and Characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs Modulation-doped Field-effect Transistor Structures
C. Besikci, Y. Civan, S. Ozder, O. Sen, C. Jelen, S. Slivken, and M. Razeghi
Semiconductor Science Technology 12-- January 1, 1997
Lattice-matched Ga0.51In0.49P/GaAs and strained Ga0.51In0.49P/InxGa1−xAs/GaAs (0.1 ≤ x ≤ 0.25) modulation-doped field-effect transistor structures were grown by gas source molecular beam epitaxy by using Si as dopant. Detailed electrical characterization results are presented. The Ga0.5In0.49P/In0.25Ga0.75As/GaAs sample yielded dark two-dimensional electron gas densities of 3.75 x 1012 cm-2 (300 K) and 2.3 x 1012 cm-2 (77 K) which are comparable to the highest sheet electron densities reported in AlGaAs/InGaAs/GaAs and InAlAs/InGaAs/InP modulation-doped heterostructures. Persistent photoconductivity was observed in the strained samples only. A 0.797 eV deep level has been detected in the undoped GaInP layers of the structures. Another level, with DLTS peak height dependent on the filling pulse width, has been detected at the interface of the strained samples. Based on the DLTS and Hall effect measurement results, this level, which seems to be the origin of persistent photoconductivity, can be attributed to the strain relaxation related defects. reprint
2.  Molecular Beam Epitaxial Growth of High Quality InSb
E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi
Applied Physics Letters 65 (26)-- December 26, 1994
In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 µm InSb layer grown on GaAs at a growth temperature of 395 °C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92,300 cm²·V−1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. reprint
3.  A detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical vapor deposition
C. Besikci, Y.H. Choi, G. Labeyrie, E. Bigan and M. Razeghi with J.B. Cohen, J. Carsello, and V.P. Dravid
Journal of Applied Physics 76 (10)-- November 15, 1994
InAs0.3Sb0.7 layers with mirrorlike morphology have been grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition. A room‐temperature electron Hall mobility of 2×104 cm²/V· s has been obtained for a 2 μm thick layer. Low‐temperature resistivity of the layers depended on TMIn flow rate and layer thickness. Hall mobility decreased monotonically with decreasing temperature below 300 K. A 77 K conductivity profile has shown an anomalous increase in the sample conductivity with decreasing thickness except in the near vicinity of the heterointerface. In order to interpret the experimental data, the effects of different scattering mechanisms on carrier mobility have been calculated, and the influences of the lattice mismatch and surface conduction on the Hall measurements have been investigated by applying a three‐layer Hall‐effect model. Experimental and theoretical results suggest that the combined effects of the dislocations generated by the large lattice mismatch and strong surface inversion may lead to deceptive Hall measurements by reflecting typical n‐type behavior for a p‐type sample, and the measured carrier concentration may considerably be affected by the surface conduction up to near room temperature. A quantitative analysis of dislocation scattering has shown significant degradation in electron mobility for dislocation densities above 107 cm−2. The effects of dislocation scattering on hole mobility have been found to be less severe. It has also been observed that there is a critical epilayer thickness (∼1 μm) below which the surface electron mobility is limited by dislocation scattering. reprint
4.  On the Description of the Collision Terms in Three-Valley Hydrodynamic Models for GaAs Device Modeling
C. Besikci and M. Razeghi
-- August 1, 1994
5.  Electron Transport Properties of Ga[0.51]In[0.49]P for Device Applications
C. Besikci and M. Razeghi
-- June 1, 1994
6.  Growth of In1-xTlxSb, a New Infrared Material, by Low-Pressure Metalorganic Chemical Vapor Deposition
Y.H. Choi, R. Sudharsanan, C, Besikci, and M. Razeghi
Applied Physics Letters 63 (3)-- July 19, 1993
We report the growth of In1-xTlxSb, a new III-V alloy for long-wavelength infrared detector applications, by low-pressure metalorganic chemical vapor deposition. In1-xTlxSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455 °C. X-ray diffraction measurements showed resolved peaks of In1-xTlxSb and InSb films. Infrared absorption spectrum of In1-xTlxSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In1-xTlxSb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure. reprint
7.  Anomalous Hall Effect in InSb Layers Grown by MOCVD on GaAs Substrates
C. Besikci, Y.H. Choi, R. Sudharsanan, and M. Razeghi
Journal of Applied Physics 73 (10)-- May 15, 1993
InSb epitaxial layers have been grown on GaAs substrates by low‐pressure metalorganic chemical vapor deposition. A 3.15 μm thick film yielded an x‐ray full width at half maximum of 171 arcsec. A Hall mobility of 76  200 cm²/V· s at 240 K and a full width at half maximum of 174 arcsec have been measured for a 4.85 μm thick epilayer. Measured Hall data have shown anomalous behavior. A decrease in Hall mobility with decreasing temperature has been observed and room‐temperature Hall mobility has increased with thickness. In order to explain the anomalous Hall data, and the thickness dependence of the measured parameters, the Hall coefficient and Hall mobility have been simulated using a three‐layer model including a surface layer, a bulklike layer, and an interface layer with a high density of defects. Theoretical analysis has shown that anomalous behavior can be attributed to donor-like defects caused by the large lattice mismatch and to a surface layer which dominates the transport in the material at low temperatures.   reprint
8.  High Quality InSb Epitaxial Film Grown by Low Pressure Metalorganic Chemical Vapor Deposition
Y.H. Choi, R. Sudharsanan, C. Besikci, E. Bigan, and M. Razeghi
-- November 1, 1992

Page 1  (8 Items)