Publications by    
Page 1  (12 Items)

1.  High Power Electrically Injected Mid-Infrared Interband Lasers Grown by LP-MOCVD
B. Lane and M. Razeghi
-- December 1, 2000
2.  High Power InAsSb/InAsSbP Electrical Injection Laser Diodes Emitting Between 3—5 μm
B. Lane, S. Tong, J. Diaz, Z. Wu, and M. Razeghi
-- May 1, 2000
3.  InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition
B. Lane, Z. Wu, A. Stein, J. Diaz, and M. Razeghi
Applied Physics Letters 74 (23)-- June 7, 1999
We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 μm aperture and 1800 μm cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm². reprint
4.  High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm
D. Wu, B. Lane, H. Mohseni, J. Diaz and M. Razeghi
Applied Physics Letters 74 (9)-- March 1, 1999
Midinfrared lasers with an asymmetrical InPAsSb/InAsSb/AlAsSb double heterostructure are reported. Using the asymmetrical double heterostructure, p- and n-cladding layers are separately optimized; high energy-gap AlAsSb (Eg ≈ 1.5 eV) for the p-type cladding layer to reduce the leakage current, and thus to increase To, and low energy-gap InPAsSb (Eg ≈ 0.5 eV) for the n-cladding layer to have low turn-on voltage. 100-μm-width broad-area lasers with 1000 μm cavity length exhibited peak output powers of 1.88 W in pulse and 350 mW in continuous wave modes per two facets at T=80 K with To of 54 K and turn-on voltage of 0.36 V. Maximum peak output powers up to 6.7 W were obtained from a laser bar of total aperture of 400 μm width and cavity length of 1000 μm, with a differential efficiency of 34% and far-field beam divergence narrower than 40° at 80 K. reprint
5.  Recent achievement in MIR high power injection laser diodes (3 to 5 μm)
M. Razeghi, D. Wu, B. Lane, A. Rybaltowski, A. Stein, J. Diaz, and H. Yi
-- February 1, 1999
6.  High power InAsSb/InPAsSb/InAs mid-infrared lasers
A. Rybaltowski, Y. Xiao, D. Wu, B. Lane, H. Yi, H. Feng, J. Diaz, and M. Razeghi
Applied Physics Letters 71 (17)-- October 27, 1997
We demonstrate high-power InAsSb/InPAsSb laser bars (λ ≈ 3.2 μm) consisting of three 100 μm-wide laser stripes of 700 μm cavity length, with peak output power up to 3 W at 90 K, and far-fields for the direction perpendicular to the junction as narrow as 12° full width half maximum. Spectra and far-field patterns of the laser bars are shown to have excellent characteristics for a wide range of operating conditions, suggesting the possibility of even higher light power emission with good beam quality. Joule heating is shown to be the major factor limiting higher power operation. reprint
7.  Stability of far fields in double heterostructure and multiple quantum well InAsSb/InPAsSb/InAs midinfrared lasers
H. Yi, A. Rybaltowski, J. Diaz, D. Wu, B. Lane, Y. Xiao, and M. Razeghi
Applied Physics Letters 70 (24)-- June 16, 1997
Far fields in perpendicular direction to the junction are investigated in double heterostructure (DH) and multiple quantum well (MQW) midwave-infrared InAsSb/InPAsSb/InAs lasers (λ = 3.2–3.6 μm). Strong broadening of the far fields in the DH lasers was observed with increases in temperature and/or current. On the contrary, MQW lasers with otherwise identical structure exhibit very stable far fields as narrow as 23° for all the operating conditions investigated. Our experiment and theoretical modeling suggest that these different behaviors of far fields in DH and MQW lasers are attributed to the refractive index fluctuation in the InAsSb laser active region. reprint
8.  Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure
B. Lane, D. Wu, H.J. Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon and M. Razeghi
Applied Physics Letters 70 (11)-- April 17, 1997
InAsxSb1−x/InP1−x−yAsxSby double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results. reprint
9.  InAsSbP/InAsSb/InAs Diode Lasers Emitting at 3.2 μm Grown by Metalorganic Chemical Vapor Deposition
D. Wu, E. Kaas, J. Diaz, B. Lane, A. Rybaltowski, H.J. Yi, and M. Razeghi
-- February 1, 1997
10.  Compressively-strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition
B. Lane, D. Wu, A. Rybaltowski, H. Yi, J. Diaz, and M. Razeghi
Applied Physics Letters 70 (4)-- January 27, 1997
A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions. reprint
11.  High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 μm Range
M. Razeghi, J. Diaz, H.J. Yi, D. Wu, B. Lane, A. Rybaltowski, Y. Xiao, and H. Jeon
-- December 2, 1996
12.  Optical losses of Al-free lasers for λ = 0.808 and 0.98 μm
H. Yi, J. Diaz, B. Lane, and M. Razeghi
Applied Physics Letters 69 (20)-- November 11, 1996
In this work, we study the origin of the optical losses in Al‐free InGaAsP/GaAs (λ=0.808 μm) and InGaAs/GaAs/InGaP (λ=0.980 μm) lasers. Theoretical modeling and the experimental results indicate that the scattering of the laser beam by refractive index fluctuation in the alloys is the dominant loss in our lasers, and the loss due to the free‐carrier absorption and scattering by interface roughness are negligible. reprint

Page 1  (12 Items)