The Center for Quantum Devices in the News by    
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251.  
Boston Laser Moved to Upstate NY
Boston Laser Moved to Upstate NY
Compound Semiconductor - July 1, 2003
After accumulating at least $20 million in losses as a public company SLI was under Chapter-11 bankruptcy. The bankruptcy court approved the sale of SLI's assets to Boston Laser for $1.5 million. As part of this acquisition, Boston Laser took over an exclusive license to Northwestern University's patents for Al-free laser diodes. ... [read more]
 
252.  
WiO Speakers Share Insights on Science Policy, Career Success
WiO Speakers Share Insights on Science Policy, Career Success
Women in Optics - April 1, 2003
Professor Manijeh Razeghi, Director of the Center for Quantum Devices at Northwestern University, provided an insightful look into her roles in the important discovery of new Al-free material systems used in high-power laser design. ... [read more]
 
253.  
Quantum Leaps
Quantum Leaps
OE magazine - December 1, 2002
In addition to her work at Wright Patterson AFB, Dr. Gail Brown is an adjunct professor at Northwestern University. In this role she works with Professor Manijeh Razeghi to advise students on their theses, attends their thesis defenses as a committe member, and conducts joint research with them. ... [read more]
 
254.  
Mid-IR Quantum Cascade Laser Produces 3.5 W at Room-Temperature
Mid-IR Quantum Cascade Laser Produces 3.5 W at Room-Temperature
Photonics Spectra - July 1, 2002
Researchers at Northwestern University have demonstrated an InP-based quantum cascade laser (QCL) that produces 3.5 W of power of 9 μm-radiation at room temperature. ... [read more]
 
255.  
Hooding Cerimony 2002
Hooding Cerimony 2002
ECE News - June 1, 2002
Professor Manijeh Razeghi and other ECE faculty attended the 2002 hooding of Dr. Steve Slivken and Dr. Brett Lane. ... [read more]
 
256.  
Sensitive GaInAs/InP QWIPs Grown on Silicon
Sensitive GaInAs/InP QWIPs Grown on Silicon
Compound Semiconductor - May 1, 2002
Quantum-well infrared photodetectors (QWIPs) are of interest for many commercial, industrial, and military applications. A team at Northwestern University has published an in situ thermal annealing technique that reduces the dislocation density when growing these devices ... [read more]
 
257.  
Growth on GaN Improves Properties of UV LEDs
Growth on GaN Improves Properties of UV LEDs
Compound Semiconductor - November 1, 2001
Researchers at Northwestern University have made the first report of significant improvements to the electrical and optical properties of 340 nm UV LEDs through growth onto free-standing GaN substrates. ... [read more]
 
258.  
 
InAs/GaSb Type-II Superlatices: New Possibilities for Infrared Photon Sensing
Mid-Infrared Network Newsletter - October 1, 2001
High performance III-V long wavelength detectors have been designed and demonstrated by the Center for Quantum Devices, with potential for use in focal plane array applications. The devices were based on InAs/GaAs superlattices grown on GaAs and GaSb substrates by MBE. ... [read more]
 
259.  
Blue Again
Blue Again
Photonics Spectra - January 1, 2001
... [read more]
 
260.  
Manijeh Razeghi
Manijeh Razeghi
OE Reports - August 1, 2000
Manijeh Razeghi is recognized for significantly advancing growth and characterization techniques for III-V and II-VI semiconductor structures for photonic and electronic devices. ... [read more]
 
261.  
Researchers Aspire Towards Artificial Eyes
Researchers Aspire Towards Artificial Eyes
Laser Focus World - June 1, 2000
Researchers are Northwestern University are developing "artificial eyes" based on multispectral quantum well infrared photodetectors (QWIPs). ... [read more]
 
262.  
My Genius Students
My Genius Students
Northwestern - May 1, 2000
Professor Manijeh Razeghi: Whom do you admire? My genius students; Which talent would you most like to have? To be a good teacher, leader, and role model for young scientist; Which trait to you admire most in others? I admire people with principles, who are eager and curious to understand science. ... [read more]
 
263.  
Manijeh Razeghi
Manijeh Razeghi
Northwestern Perspective - April 1, 2000
Manijeh Razeghi is the Walter P. Murphy Professor of Electrical Engineering and computer Science and Center for Quantum Devices director, and Society of Women Engineers 1995 Achievement Awardee. ... [read more]
 
264.  
Future So Blue
Future So Blue
BMDO Update - April 1, 2000
The Center for Quantum Devices at Northwestern University has taken a significant step towards overcoming the limitations imposed by a sapphire substrate. They have designed a very simple structure that uses a GaInN/GaN multi-quantum well rather than AlGaN layers. ... [read more]
 
265.  
Aluminum Gallium Nitride Photodiodes are Blind above 275 nm
Aluminum Gallium Nitride Photodiodes are Blind above 275 nm
Laser Focus World - March 1, 1999
There is great interest in solar-blind ultraviolet photon detectors, especially in the military, which could use such detectors for tracking missile launches. The best material for building such devices are compounds of aluminum gallium nitride (AlGaN ... [read more]
 
266.  
Diode Laser Turns Up the Power in the Mid-IR
Diode Laser Turns Up the Power in the Mid-IR
Photonics Spectra - February 1, 1999
Research at Northwestern University has introduced new options for semiconductor lasers operating in the mid-infrared range. ... [read more]
 
267.  
Team Builds More Efficient Quantum Cascade Laser
Team Builds More Efficient Quantum Cascade Laser
Photonics Spectra - February 1, 1999
From chemical spectroscopy to free-space optical communications, a growing number of applications can benefit from lasers emitting in the IR between 8 and 12 μm. In recent years, many have looked closely at quantum cascade lase technology for these types of applications. ... [read more]
 
268.  
Indium Phosphide-Based Photodetectors Sense Longer Wavlengths
Indium Phosphide-Based Photodetectors Sense Longer Wavlengths
Laser Focus World - December 1, 1998
Researchers at Northwestern University and Wright Patterson Air Force Base have demonstrated quantum-well infrared photodetectors (QWIPs) for wavlengths between 8 and 20 μm using lattice-matched InGaAlAs-InP. ... [read more]
 
269.  
Northwestern Reports High-Power Laser Emission
Northwestern Reports High-Power Laser Emission
Optics and Photonics News - October 1, 1998
Researchers at Northwestern University's Center for Quantum Devices recently reported high-power laser emission at 3.4 μm, up to 6.7 W in pulse operation, from AlAsSb/InAsSb/InPAsSb/InAs semiconductor laser diodes. ... [read more]
 
270.  
Scientists Unveil High-Power Mid-IR Laser
Scientists Unveil High-Power Mid-IR Laser
Photonics Spectra - October 1, 1998
In the latest development from the Center for Quantum Devices at Northwestern University, researchers have reported developing a high-power mid-IR laser emitting at 3.4 μm. ... [read more]
 
271.  
Are Laser Manufacturers Blue with Envy?
Are Laser Manufacturers Blue with Envy?
Photonics Spectra - May 1, 1998
Some say Nichia is two years ahead of the pack, but that may not be true. Researchers at the Center for Quantum Devices have demonstrated continuous wave room temperature operation of InGaN/GaN multiple quantum well lasers. ... [read more]
 
272.  
My Genius Students
My Genius Students
Northwestern - May 1, 1998
Manijeh Razeghi: Whom do you most admire? My genius Students; What Inspires you most? The mystery of our own human minds and bodies and the whole nature surrounding us; Which talent would you most like to have? TO be a good teacher, leader, and role model to young students. ... [read more]
 
273.  
As Companies Race toDevelop the Blue Laser, Universities Join the Game
As Companies Race toDevelop the Blue Laser, Universities Join the Game
Optics and Photonics News - January 10, 1998
Nichia Chemicals Industry Ltd. is still setting the pace, but more companies and universities are heating up the competition. This includes promising new research coming from Northwestern University's Center for Quantum Devices. ... [read more]
 
274.  
High Power InAsSb/InAsSbP laser Diodes  Emitting in the 3 - 5 &mum Range
High Power InAsSb/InAsSbP laser Diodes Emitting in the 3 - 5 &mum Range
Research Hilights or the Physics Division - January 1, 1998
Mid-infrared laser diodes (λ = 3 to 5 μm) are the attractive source for a wide range of applications ranging from chemical spectroscopy to free-space and optical fiber communication. ... [read more]
 
275.  
Record Calimed by Al-free Laser
Record Calimed by Al-free Laser
Electron Materials Technology News - December 1, 1997
Researchers at Northwestern University's Center for Quantum Devices are claiming the longest lifetime ever achieved for any high-power (more than 1 W) laser diode operated at high temperature (-60°C) with uncoated facets. ... [read more]
 

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