Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAsSb/AlAsSb type–II superlattices Scientific Reports 7, Article number: 3379 (2017) - June 13, 2017reprint

Recent advances in antimonide-based gap-engineered Type-II superlattices material system for 2 and 3 colors infrared imagers Proceedings of SPIE 10177, Infrared Technology and Applications XLIII, 1017705 - May 9, 2017reprint

Wenjia Zhou Wins Best Paper Award at SPIE Photonics West 2016 Conference & Best Poster Award at CNST Nanotechnology Workshop
SPIE Photonics
April 18, 2017   [read article]

Romain Chevallier Wins Best Student Oral Presentation Award at 2016 International Semiconductor Device Research Symposium
ISDRS 2016 INternational Semiconductor Device Research Symposium
April 13, 2017   [read article]

Keynote Speaker
International Conference on Nanophotonics, Women, Education & Photonics Session
Recife, Brazil
July 2, 2017   [conference link]

Keynote Speaker,
7th Euro Biosensors & Bioelectronics Conference
Berlin, Germany
July 10, 2017   [conference link]

1. Impact of scaling base thickness on the performance of heterojunction phototransistors Nanotechnology 28, 10LT01 (2017) February 2, 2017reprint

2. Dispersion compensated mid-infrared quantum cascade laser frequency comb with high power output AIP Publishing April 26, 2017reprint

3. Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAsSb/AlAsSb type–II superlattices Scientific Reports 7, Article number: 3379 (2017) June 13, 2017reprint

4. Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier Applied Physics Letters 110, 101104 (2017) March 8, 2017reprint

5. Background–limited long wavelength infrared InAs/InAsSb type-II superlattice-based photodetectors operating at 110 K APL Materials 5, 035502 (2016) February 13, 2017reprint