High speed type-II superlattice based photodetectors transferred on sapphire Applied Physics Express, Volume 12, Number 11 - October 3, 2019reprint

MOCVD grown β-Ga₂O₃ metal-oxide-semiconductor field effect transistors on sapphire Applied Physics Express 12, 095503 (2019) - August 28, 2019reprint

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1. High speed type-II superlattice based photodetectors transferred on sapphire Applied Physics Express, Volume 12, Number 11 October 3, 2019reprint

2. nBn extended short-wavelength infrared focal plane array Optics Letters Vol. 43, Issue 3, pp. 591-594 (2018) February 1, 2018reprint

3. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices Appl. Phys. Lett. 114, 191109 May 17, 2019reprint

4. December 31, 1969

5. Room temperature terahertz semiconductor frequency comb Nature Communications 10, 2403 (2019) June 3, 2019reprint