Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer Journal of Physics D: Applied Physics, Volume 49, Number 31 - July 15, 2016reprint

Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices Applied Physics Letters 109, 021107 (2016) - July 12, 2016reprint

Manijeh Razeghi Receives Jan Czochralski Gold Medal
McCormick Engineering News/ Amanda Morris
September 12, 2016   [read article]

Widely tunable MIR QCL eyed for spectroscopy, chemical sensing
flhotonlcs Spectra 29
August 15, 2016   [read article]

Keynote Speaker, "III-Nitride Based Avalanche Photodetectors"
IWN-2016, Interantional Workshop on Nitride Semiconductors
Orlando, FL.
October 2, 2016   [conference link]

Plenary Speaker, "Quantum Disc Camera from UV to THz"
International Symposium Terahertz Nanoscience (Teranano VIII)
Porquerolles, France
October 2, 2016   [conference link]

1. Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices Applied Physics Letters 109, 021107 (2016) July 12, 2016reprint

2. High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs_1-xSb_x/AlAs_1-xSb_x superlattices Proc. SPIE 9819, Infrared Technology and Applications XLII, 98190A May 20, 2016reprint

3. InAs/InAs_1-xSb_x type-II superlattices for high performance long wavelength infrared detection Appl. Phys. Lett. 105, 121104 (2014) September 22, 2014reprint

4. High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices Nature Scientific Reports 6, Article number: 24144 (2016) April 7, 2016reprint

5. Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design Nature Scientific Reports 6, Article number: 25213 June 8, 2016reprint