Demonstration of long wavelength infrared Type-II InAs/InAs_1-xSb_x superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition Applied Physics Letters 112, 241103 (2018) - June 12, 2018reprint

Monolithic, steerable, mid-infrared laser realized with no moving parts Scientific Reports 7, 8472 - May 24, 2018

Applied Physics Letters' Releases New Article Authored by Razeghi & CQD Team
ELECTRICAL ENGINEERING & COMPUTER SCIENCE DEPARTMENT NEWS
June 13, 2018   [read article]

Prof. Razeghi is highlighted in the Northwestern Undergraduate Research Journal
Electrical Engineering and Computer Science
June 11, 2018   [read article]

“7th International conference on Smart Materials and Structures”
Smart Material Congress 2018
Vienna, Austria
July 2, 2018   [conference link]

Conference Chair "Biosensing and Nanomedicine XI"
SPIE 2018 - Optics+ Photonics+Nanoscience+Engineering
San Diego, California, United States
August 19, 2018   [conference link]

1. InAs/InAs_1-xSb_x type-II superlattices for high performance long wavelength infrared detection Appl. Phys. Lett. 105, 121104 (2014) September 22, 2014reprint

2. Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAsSb/AlAsSb type–II superlattices Scientific Reports 7, Article number: 3379 (2017) June 13, 2017reprint

3. Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices Optics Letters Vol. 42, Iss. 21, pp. 4275-4278 (2017) October 16, 2017reprint

4. Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier Applied Physics Letters 110, 101104 (2017) March 8, 2017reprint

5. Type-II InAs/GaSb/AlSb superlatticebased heterojunction phototransistors: back to the future Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV- Page-1054004-1 January 26, 2018reprint