301.
| New Alloy Semiconductors Detect IR
Sensor Technology - December 1, 1996
A group at Northwestern University developed new thallium based semiconductor alloys with great promise in the long wavelength 1 to 12 μm regions of the spectrum. The goal: high-performance, room-temperature infrared sensing. ... [read more]
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302.
| Seeing a New Light; New Laser Boast Power, Reliability
Chicago Tribune - October 29, 1996
A high-power, low-energy miniature laser developed by Northwestern University researchers will be commercialized by Semiconductor Laser International Corp., the firm said Monday. ... [read more]
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303.
| GaN Film Nears Perfection
BMDO Update - September 1, 1996
Northwestern University's Center for Quantum Devices has grown some of the world's highest-quality III-Nitride films, with defect densities less than 10 million per centimeter squared. ... [read more]
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304.
| MBE Growth of Indium Antimonide Reduces Cost of IR Arrays
Laser Focus World - July 1, 1996
At the Center for Quantum Devices (CQD) at NU, scientists have demonstrated 3 to 5 μm focal-plane 256 x256 pixel array imaging using indium antimonide (InSb) grown on a gallium arsenide (GaAs) substrate. ... [read more]
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305.
| Ultraviolet Detectors
Compound Semiconductor - May 1, 1996
Researchers at Northwestern University's Center for Quantum Devices are actively pursuing the development of AlGaN for photoconductive and photovoltaic UV detectors. ... [read more]
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306.
| Most Sensitive IR Detectors Developed by University Researchers
Notherwestern Observer - April 22, 1996
Northwestern University Researchers have developed a new kind of semiconductor material for IR detectors that is far mode sensitive than any made to date. The new detectors should be able to see and image of a human body in extreme detail as a distance of several miles. ... [read more]
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307.
| GaN Laser Diode Brightens Hopes for a Long-Lived, SHort-Wavlength Device
Physics Today - April 1, 1996
... [read more]
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308.
| Northwestern InSb Research Revisited
Electron Materials Technology News - April 1, 1996
Unfortunately the previous story about Northwestern university's QWIPs was incorrect. While the Center is working on QWIPs, the work discussed involved simple InSb p-n junction devices. ... [read more]
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309.
| Some Like it Hot
Chemistry and Industry - February 19, 1996
Big brother may soon have a new way of watching you, thanks to researchers at Northwestern University. They've used advanced film deposition techniques to make heat-sensitive detectors so sensitive that they can provide detailed images of the human body from several miles away. ... [read more]
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310.
| Cameras That Go Infrared in the Night
New Scientist - February 17, 1996
Infrared detectors made from materials already used in lasers promise to provide the best infrared cameras and night-vision devices yet. These quantum well infrared photodetectors, or QWIPS are made from alternating layers of semiconductor materials, arranged atom by atom into layers just 10 molecules thick, says Manijeh Razeghi. ... [read more]
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311.
| Growth of Ge-Dopes AlGaN
Compound Semiconductor - January 31, 1996
Photoluminescence data for Al[x]Ga[1-x]N samples with x < 0.2 displayed sharp band edge emission and a bread deep-level emission near 2.4 eV. Ge doping eliminated the deep level emission features observed in un-dopes AlGaN samples suggesting that this deep level emission may be related to Ga vacancies that could be filled by Ge donor impurities ... [read more]
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312.
| Razeghi, Faber Reconized for Achievement
Observer - November 6, 1995
Two faculty members at the Robert R. McCormick School of Engineering and Applied Science -- Manijeh Razeghi and Katherine Faber -- have been cited by the Society of Women Engineers for outstanding achievements. ... [read more]
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313.
| Aluminum-Free Diode Lasers Last Longer
Laser Focus World - November 1, 1995
Ongoing test suggest both rugged operation and long life for InGaAsP based aluminum-free diode lasers fabricated by researchers at Northwestern University. Elimination of aluminum removes an easily oxidized specie that spreads performance-degrading defects through the structure by forming light-absorbing dark lines. ... [read more]
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314.
| Engineering Center and Korea Collaborate
Observer - October 2, 1995
The Center for Quantum Devices has been selected be the Korea Science and Engineering Foundation for a long-term collaboration to develop new lasers and semiconductor devices. The $1300,000 a year collaboration will enable research scientist and postdocs from the Joenbuk REsearch Center at Joenbuk National University to carry out joint research projects the Center for Quantum Devices of a five year period. ... [read more]
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315.
| SWE Achievment Award Acceptance Adress: Dr. Razeghi
Society of Women Engineers - October 1, 1995
Good evening, ladies and gentlemen. It is a great pleasure and honor for me to have been selected at the 44th recipient of the Society of Women Engineers Achievement Award. ... [read more]
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316.
| For Leadership and COntributions to Optoelectronic Devices and Education
Society of Women Engineers - October 1, 1995
The Achievement Award is the highest award given annually by the Society of Women Engineers. It's presented annually to a woman who has made an outstanding contribution in a field of engineering, has academic training in either science or engineering, and meets the requirements for Senor Member in the Society. ... [read more]
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317.
| Korean Center Inauguration
McCormick Dimension - September 1, 1995
In ceremonies held July 28, Northwestern and Korea announced a five-year collaboration between KOSEF and the Center for Quantum Devices to develop new semiconductors and lasers. ... [read more]
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318.
| InGaAsP Laser Diodes Outperform AlGaAs
Opto & Laser Europe - October 1, 1994
High-power semiconductor lasers based on InGaAsP alloys offer a superior alternative to conventional AlGaAs diodes. That's the view of Manijeh Razeghi at Northwestern Universtiy, who has fabricated devices with threshold current densities as low as 80 A/cm2, differential efficiencies as high as 1.2W/A, and projected lifetimes between 10^5 and 10^7 hours. ... [read more]
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319.
| Aluminum-Free High-Power Diodes have Long Lifetimes
Laser Focus World - August 1, 1994
Scientist at Northwestern University have fabricated high-power laser diodes based on InGaAsP lattice-matched to GaAs substrates. The devices have power outputs of 750 mW in quasi-continuous more, and 650 mW in continuous mode (per facet). Razehi says that these devices have suffered no observable degradation after more than 3000 house of operation in the quasi-continuous regime. ... [read more]
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320.
| Indium Makes More Durable Semiconductor Laser
Inside R&D - July 6, 1994
A strong case has been made for replacing aluminum-based semiconductor lasers with a new indium-based type that researchers at Northwestern University have been working on. In fact, the durability of the new semiconductor diodes is enough better than those in present high-power lasers that we could see new applications. ... [read more]
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321.
| ARPA Seeks Cheaper, Better Laser Weapons
Laser Focus World - July 1, 1994
ARPA sponsored research at Northwestern University is focusing on technology for aluminum-free diodes emitting at 808 nm for use in pumping Nd:YAG lasers. This research seeks to demonstrate the use of a MOPCVD process to produce lasers diodes of InGaAsP as a replacement for diodes based on AlGaAs. ... [read more]
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322.
| Quantum Force
Northwestern Perspective - June 1, 1994
Students crowd into the office on the fourth floor of the Materials and Life Sciences Building. Seated at a table, Professor Manijeh Razeghi faces two renowned physicist from Poland. Three graduate students sitting beside her take notes as fast as they can. One student passes the visitors a three-dimensional drawing of something that looks like a multilayered pastry ... [read more]
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323.
| High Powered Laser on a Chip
Northwestern Perspective - March 1, 1994
Northwestern researchers have discovers a way to make high-powered lasers on a computer chip, which "should lead to a whole new generation of comercial high-powered lasers that will be reliable, long-lasting, and prescise," says Manijeh Razeghi, Walter P. Murphy Professor of Electrical Engineering and Computer Science. ... [read more]
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324.
| Discovery viewed as breakthrough in miniature lasers
The Huntsville Times - November 29, 1993
Northwestern University researchers say they have discovers a way to make high-powered lasers on a computer chip, a breakthrough that should lead to a new generation of miniature lasers. Previously, the only method for producing the lasers on a chip had involved the use of AlGaAs, But the use of aluminum content led to defects in the original construction and sudden failures in operation. ... [read more]
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325.
| NU Researchers on power trip over laser findings
The Daily Northwestern - November 19, 1993
Miniature lasers could be shooting throguh laboratories everywhere due to Northwestern researchers' discoveries of new methods of producing the high powered beams. Manijeh Razeghi, Professor of electrical engineering and computer science, announced the finding Wednesday at the anual meeting of the Lasers and Electro-Optic Society in San Jose, Ca. ... [read more]
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Address: Center for Quantum Devices; 2220 Campus Drive RM 4051; Evanston, IL 60208-0893
Phone: (847) 491-7251
Email: razeghi@northwestern.edu